Jeong, HyunJoon, SangMin Woo, JinYoung Choi, HyungMin Cho, Yohan Kim,
Jeong-Taek Kong, and SoYoung Kim
Fast and Expandable ANN-Based Compact Model and Parameter Extraction for Emerging Transistors IEEE Journal of the Electron Devices Society (2023)
DOI 10.1109/JEDS.2023.3246477
Abstract: In this paper, we present a fast and expandable artificial neural network (ANN)-based compact model and parameter extraction flow to replace the existing complicated compact model implementation and model parameter extraction (MPE) method. In addition to nanosheet FETs (NSFETs), our published ANN based compact modeling framework is easily extended to negative capacitance NSFETs (NC-NSFETs), which are attracting attention as next-generation devices. Each device is designed using a technology computer-aided design (TCAD) simulator. Using device structure parameters, temperature, and channel doping depth as input variables, we construct a dataset of electrical properties used for machine learning (ML)-based modeling. The accuracy of predicting device electrical characteristics with the proposed ANN-based compact model is less than a 1% error compared to TCAD, and simulation results of digital and analog circuits using the proposed compact model show less than a 3% error. This allows the ANN-based modeling framework to achieve accurate DC, AC, and transient simulations without restrictions on device technology. In particular, temperature and process variables such as channel doping depth, which are not defined in the compact model parameters, are easily added to the previously presented five key parameters. Instead of conventional complex compact modeling and MPE work, we propose a method to create fast, accurate, flexible, and expandable ML-based Verilog-A SPICE models with design technology co-optimization (DTCO) capabilities.
Fig A: Conventional model parameter extraction flow
Fig B: The proposed ANN-based model parameter extraction flow
Acknowledgments: We thank the reviewers for improving the contents of the paper. This work was supported by an Institute of Information & communications Technology Planning & Evaluation (IITP) grant funded by the Korean government (MSIT) (No.2021-0- 00754, Software Systems for AI Semiconductor Design) and by a National Research Foundation of Korea grant funded by the Korean government (MISP) (NRF-2020R1A2C1011831). The EDA tool was supported by the IC Design Education Center (IDEC), Korea
2 comments:
Hello there! I always was keen on integration of ML and electronics. I'm glad to see it implemented. When i work on devices (TFETs), i generate IV and CV characteristics and generate library files using verilog code and finally implement it in either hspice or cadence. The proposed paper suggests a way to generate the verilog code using ML as it changes from device to device. Did i understand it correctly?
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