[review] SOI devices and their basic properties

Rudenko, T. E., A. N. Nazarov, and V. S. Lysenko

The advancement of silicon-on-insulator (SOI) devices and their basic properties

Semiconductor Physics, Quantum Electronics & Optoelectronics 23, no. 3 (2020)

DOI: 10.15407/spqeo23.03.227

* V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 45, prospect Nauky, 03680 Kyiv, Ukraine

Abstract. Silicon-on-insulator (SOI) is the most promising present-day silicon technology. The use of SOI provides significant benefits over traditional bulk silicon technology in fabrication of many integrated circuits (ICs), and in particular, complementary metal-oxide-semiconductor (CMOS) ICs. It also allows extending the miniaturization of CMOS devices into the nanometer region. In this review paper, we briefly describe evolution of SOI technology and its main areas of application. The basic technological methods for fabrication of SOI wafers are presented. The principal advantages of SOI devices over bulk silicon devices are described. The types of SOI metal-oxide-semiconductor field-effect transistors (MOSFETs) and their basic electrical properties are considered. Keywords: silicon-on-insulator (SOI), metal-oxide-semiconductor field-effect transistor (MOSFET), multiple-gate transistor, ultra-thin-body SOI transistor, fully-depleted SOI transistor, interface coupling.

FIG: Equivalent capacitance circuit of the long-channel bulk / PD SOI MOSFET (a), and FD SOI MOSFET (b). Subthreshold characteristics of FD SOI MOSFET and bulk / PD SOI MOSFET (c).