[paper] SPICE Modeling of Cycle-to-Cycle Variability in RRAM Devices

E.Salvador^a, M.B.Gonzalez^b, F.Campabadal^b, J.Martin-Martinez^a, R.Rodriguez^a, E.Miranda^a

SPICE Modeling of Cycle-to-Cycle Variability in RRAM Devices

Solid-State Electronics; In Press, Journal Pre-proof

Available online 29 May 2021, 108040

DOI: 10.1016/j.sse.2021.108040

a) Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona, 08193 Cerdanyola del Valles, Spain
b) Institut de Microelectrònica de Barcelona, IMB-CNM, CSIC, 08193 Cerdanyola del Valles, Spain

Abstract: In this work, we investigated how to include uncorrelated cycle-to-cycle (C2C) variability in the LTSpice quasi-static memdiode model for RRAM devices. Variability in the I-V curves is first addressed through an in-depth study of the experimental data using the FITDISTRPLUS package for the R language. This provides a first approximation to the identification of the most suitable model parameter distributions. Next, the selected candidate distributions are incorporated into the model script and used for carrying out Monte Carlo simulations. Finally, the experimental and simulated observables (set and reset currents, transition voltages, etc.) are statistically compared and the model estimands recalculated if it is necessary. Here, we put special emphasis on describing the main difficulties behind this seemingly simple procedure.

Figure 4. Comparison of experimental and simulated parameter distributions: 

a) IHRS, b) VT, c) ILRS, and d) VR.

Acknowledgements: This work was supported by the Spanish Ministry of Science, Innovation and Universities through projects TEC2017-84321-C4-1-R, TEC2017-84321-C4-4-R, and PID2019-103869RB-C32.