The Symposium on Schottky Barrier MOS (SB-MOS) devices is held in the timeframe of the Graduated Students Meeting of URV on June 30th at the University Rovira i Virgili, Spain. This is the first joint R&D event between the URV and Symposium on SB-MOS.
This year the joint R&D event is sponsored by the URV, THM, the IEEE EDS Spain & Germany Chapter, and organized by Dr. Laurie Calvet (C2N, Palaiseau, France), Prof. Mike Schwarz and Prof. Alexander Kloes (NanoP THM, Germany), Prof. Lluis Marsal (DEEEA, URV), and Prof. Benjamin Iniguez (DEEEA, URV) and the staff at the URV.
Our joint R&D event starts on June 30th with the Symposium of SB-MOS. On July 1st and July 2nd the Graduated Students Meeting is held. The following speakers have confirmed their invitations to SB-MOS: Dr. Radu Sporea (Advanced Technology Institute, University of Surrey, Guildford, UK), Dr. Laurie E. Calvet (C2N, CNRS-Université Paris-Sud, France), Prof. Walter Weber (TU Vienna) and further.
Symposium of SBMOS
Graduated Student Meeting
To register for the event use the vTools of IEEE with the following link:
https://meetings.vtools.ieee.org/m/272299
Important dates:
- Event Announcement/CFP: May 2021
- Final Program: June 2021
- Registration deadline: June 27, 2021
- Symposium SB-MOS devices: June 30, 2021
- Graduated Students Meeting on Electronics Engineering: July 1st - 2nd, 2021
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