Wednesday, 28 December 2016

FOSS CAD research is in the spotlight

The conference paper "FOSS as an efficient tool for extraction of MOSFET compact model parameters" reached 20 reads at the researchgate.net

FOSS as an efficient tool for extraction of MOSFET compact model parameters
D. Tomaszewski, G. Głuszko, M. Brinson, V. Kuznetsov and W. Grabinski
MIXDES 2016, Lodz, pp. 68-73.


Abstract—A GNU Octave – based application for device-level compact model evaluation and parameter extraction has been developed. The applications main features are as follows: experimental I-V data importing, generating input data for different circuit simulation programs, running the simulation program to calculate I-V characteristics of the specified models, calculating model misfit and its sensitivity to selected parameter variation, and the comparison of experimental and simulated characteristics. Measured I-V data stored by different measurement systems are accepted. Circuit simulations may be done with Ngspice, Qucs and LTSpiceIV. Selected aspects of the application are presented and discussed. 

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