Knowledge of analog and mixed signal board level design including PCB layout guidelines a strong plus. Knowledge of both analog and digital video interface... GLOBALFOUNDRIES - Malta, NY Technology related Bachelor's degree with 6 years experience ;. or Master's degree plus 5 years experience in process technology development area;.... Experience would be obtained through your educational level research and/or relevant job/internship experiences.... Quantum Solution - Sunnyvale, CA Excellent proficiency of Cadence's custom IC design environment, analog/mixed signal circuit simulation (Spectre, Hspice, Ocean scripting, ).... |
Aug 13, 2013
Fwd: 4 new Semiconductor Device Characterization Engineer jobs
Aug 8, 2013
[mos-ak] [Final Program] 11th MOS-AK ESSDERC ESSCIRC Workshop with the keynote speaker Larry Nagel
9:00 - 12:00 | Morning Session - Chair: Prof. Andrei Vladimirescu, ISEP (F); UCB (USA) |
O_1 | Welcome and Workshop Opening W. Grabinski MOS-AK Group (EU) |
T_2 | SPICE - MOS-AK Keynote Larry Nagel Omega Enterprises Consulting (USA) |
T_3 | NGSPICE: recent progresses and future plans Paolo Nenzi*, Francesco Lannutti*, Robert Larice**, Holger Vogt**, Dietmar Warning** *DIET - Sapienza University of Roma (I), ** NGSPICE Development Team |
T_4 | KCL and Linear/NonLinear Separation in NGSPICE Francesco Lannutti DIET - Sapienza University of Roma (I) and NGSPICE Development Team |
Coffee Break | |
T_5 | Modeling Junction Less FETs Jean-Michel Sallese, Farzan Jazaeri, Lucian Barbut EPFL (CH) |
T_6 | HiSIM-Compact Modeling Framework Hans Juergen Mattausch Uni. Hiroshima (J) |
P_7 | The Correct Account of Nonzero Differential Conductance in the Saturation Regime in the MOSFET Compact Model Valentin Turin*, Gennady Zebrev**, Sergey Makarov***, Benjamin Iniguez****, and Michael Shur***** *State University-ESPC (RU),**MEPHI (RU),***SYMICA Inc (RU),****URV (SP),*****RPI (USA) |
12:00 -13:00 | Lunch Break |
13:00 -16:00 | Afternoon Session - Chair: W. Grabinski, MOS-AK Group |
T_8 | State of the Art Modeling of Passive CMOS Components Bernd Landgraf Infineon Technologies (A) |
T_9 | Compact I-V Model of Amorphous Oxide TFTs Benjamin Iniguez*,Alejandra Castro-Carranza* , Muthupandian Cheralathan* , Slobodan Mijalkovic**, Pedro Barquinha***, Elvira Fortunato***, Rodrigo Martins***,Magali Estrada****, and Antonio Cerdeira**** *URV (SP), **Silvaco Ltd (UK), ***UNL(P), ****CINVESTAV (MEX) |
Coffee Break | |
T_10 | Three-Dimensional Electro-Thermal Circuit Model of Power Super-Junction MOSFET Aleš Chvála, Daniel Donoval, Juraj Marek, Patrik Príbytný and Marián Molnár Institute of Electronics and Photonics, Slovak University of Technology in Bratislava (SK) |
T_11 | A Close Comparison of Silicon and Silicon Carbide Double Gate JFETs Matthias Bucher, Rupendra Sharma Technical University of Crete, Chania, (GR) |
T_12 | Towards wide-frequency substrate model of advanced FDSOI MOSFET Sergej Makovejev, Valeriya Kilchytska, Jean-Pierre Raskin, Denis Flandre UCL (B) |
16:00 | End of the MOS-AK Workshop |
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Jul 8, 2013
[repost nanobuff] On compact modeling
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Jul 5, 2013
Third Berkeley Symposium on Energy Efficient Electronic Systems
Place: Sutardja Dai Hall, UCB, California, USA
Message from Symposium Organizers
Eli Yablonovitch, Co-Chair, Organizing Committee
Jeffrey Bokor, Co-Chair, Organizing Committee
[Symposium Link]
Jul 4, 2013
URSI-C Commission Workshop (Kawasaki)
Sponsorship:
Sponsored by:
- IEEE MTT-S Japan Chapter
- IEEE AP-S Japan Chapter
- IEEE VT-S Japan Chapter
- IEEE SSC-S Japan Chapter
Location: Toshiba Science Museum (directions from Komukaitoshiba town)
Entry fee: Free
Program
12:15 - 12:30 Reception
12:30 - 13:15 Toshiba Science Museum tour
13:30 - 13:40 Opening Remarks Masahiro Morikura (Kyoto University)
13:40 - 14:20 "High frequency modeling of the MOSFET, including the process variation" Yoshitomi Sadayuki (Toshiba)
14:20 - 15:00 "Challenges and Solutions for RFIC Realization" Sugaya Hidehiko (Cadence Japan)
15:00 - 15:10 Break (10 minutes)
15:10 - 15:50 "Methodology for substrate coupling analysis with high frequency accuracy" Sotiris Bantas (Helic, Inc.)
15:50 - 16:30 "Behavioral technology of RF transceiver circuit" Takahiro Kikuchi (Agilent Technologies)
16:30 Closing
17:30 - social gathering
[read more...]
Jun 27, 2013
[mos-ak] "Advances in Condensed Matter Physics" Special Issue on Device Modeling
Advances in Condensed Matter Physics is published using an open access publication model, meaning that all interested readers are able to freely access the journal online without the need for a subscription. Moreover, the journal currently has an Impact Factor of 1.158.
This special issue focuses on novel advances in the broad field of device modeling. Models of semiconductor devices are used in circuit simulators in order to predict the functionality of circuits and are an important prerequisite for successful circuit design. The currently available semiconductor models are facing enormous challenges in modeling the observed physical phenomena in the sub-50nm technologies. The demand for advanced models, which can describe emerging devices necessary in the near future and can account for their physical effects, has led to enormous R&D efforts in the development of advanced physics-based models. These novel devices that can reduce the cost of the actual ones (by using organic materials) and/or improve their performances (low leakage, low power, and high speed in a smaller footprint) will be preferred in circuits, thus calling for accurate and reliable models, including new device specific effects. Modeling these devices is of high importance in order to analyze and predict the behaviour of emerging ones, without the high cost necessary to fabricate the real components. For some specific purposes, like power and timing analysis, it is really necessary to incorporate models at gate level, too. These models also suffer the effects of nanoscaling and are currently under intense development.
- Modeling the physical behaviour of novel silicon-based FETs (FinFETs, DG FETs, nanowires, junctionless FETs, tunneling FETs, variable barrier transistors, etc.)
- Modeling the physical behaviour of graphene-based devices
- Modeling the physical behaviour of organic semiconductor-based devices (OLEDs, junctions, TFTs, sensors, etc.)
- Device and gate level model implementation for circuit simulations
Before submission authors should carefully read over the journal's Author Guidelines, which are located at http://www.hindawi.com/
Prospective authors should submit an electronic copy of their complete manuscript through the journal Manuscript Tracking System at http://mts.hindawi.com/submit/
Manuscript Due Friday, 13 December 2013
First Round of Reviews Friday, 7 March 2014
Publication Date Friday, 2 May 2014
Lead Guest Editor
Oana Moldovan, Universitat Rovira i Virgili, Tarragona, Spain
Guest Editors
--AlejandraCastro-Carranza, Universitat Rovira i Virgili, 43007 Tarragona, Spain
François Lime, Universitat Rovira i Virgili, 43007 Tarragona, Spain
Rodrigo Picos, Universitat de les Illes Balears. Cra. deValldemossa, km 7.5, Palma, Illes Balears, Spain
Bogdan Mihai Nae, Universitat Rovira i Virgili, 43007 Tarragona, Spain
Spiros Nikolaidis, Aristotle Universityof Thessaloniki, Thessaloniki, Greece
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Jun 23, 2013
CMC @ Si2
[read more: CMC Presentation at DAC]