Thursday, 27 June 2013

[mos-ak] "Advances in Condensed Matter Physics" Special Issue on Device Modeling

Advances in Condensed Matter Physics is published using an open access publication model, meaning that all interested readers are able  to freely access the journal online without the need for a subscription. Moreover, the journal currently has an Impact Factor of 1.158.

 

This special issue focuses on novel advances in the broad field of device modeling. Models of semiconductor devices are used in circuit simulators in order to predict the functionality of circuits and are an important prerequisite for successful circuit design. The currently available semiconductor models are facing enormous challenges in modeling the observed physical phenomena in the sub-50nm technologies. The demand for advanced models, which can describe emerging devices necessary in the near future and can account for their physical effects, has led to enormous R&D efforts in the development of advanced physics-based models. These novel devices that can reduce the cost of the actual ones (by using organic materials) and/or improve their performances (low leakage, low power, and high speed in a smaller footprint) will be preferred in circuits, thus calling for accurate and reliable models, including new device specific effects. Modeling these devices is of high importance in order to analyze and predict the behaviour of emerging ones, without the high cost necessary to fabricate the real components. For some specific purposes, like power and timing analysis, it is really necessary to incorporate models at gate level, too. These models also suffer the effects of nanoscaling and are currently under intense development.


Potential topics include, but are not limited to:
  • Modeling the physical behaviour of novel silicon-based FETs (FinFETs, DG FETs, nanowires, junctionless FETs, tunneling FETs, variable barrier transistors, etc.)
  • Modeling the physical behaviour of graphene-based devices
  • Modeling the physical behaviour of organic semiconductor-based devices (OLEDs, junctions, TFTs, sensors, etc.)
  • Device and gate level model implementation for circuit simulations

Before submission authors should carefully read over the journal's Author Guidelines, which are located at http://www.hindawi.com/journals/acmp/guidelines/.

Prospective authors should submit an electronic copy of their complete manuscript through the journal Manuscript Tracking System at http://mts.hindawi.com/submit/journals/acmp/rdsd/ according to the following timetable:

 

Manuscript Due  Friday, 13 December 2013

First Round of Reviews  Friday, 7 March 2014

Publication Date  Friday, 2 May 2014

 

Lead Guest Editor

Oana Moldovan, Universitat Rovira i Virgili, Tarragona, Spain

Guest Editors 

AlejandraCastro-Carranza, Universitat Rovira i Virgili, 43007 Tarragona, Spain

François Lime, Universitat Rovira i Virgili, 43007 Tarragona, Spain

Rodrigo Picos, Universitat de les Illes Balears. Cra. deValldemossa, km 7.5, Palma, Illes Balears, Spain

Bogdan Mihai Nae, Universitat Rovira i Virgili, 43007 Tarragona, Spain

Spiros Nikolaidis, Aristotle Universityof Thessaloniki, Thessaloniki, Greece

--
You received this message because you are subscribed to the Google Groups "mos-ak" group.
To unsubscribe from this group and stop receiving emails from it, send an email to mos-ak+unsubscribe@googlegroups.com.
To post to this group, send email to mos-ak@googlegroups.com.
Visit this group at http://groups.google.com/group/mos-ak.
For more options, visit https://groups.google.com/groups/opt_out.
 
 

No comments: