SISPAD'2012 - Second call for papers

Call for Papers

The International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) provides an international forum for the presentation of the leading-edge research and development results in the area of process and device simulation. SISPAD is one of the longest-running conferences devoted to technology computer-aided design (TCAD) and advanced modeling of novel semiconductor devices and nano electronic structures.

Date and Location

• Conference date: September 5-7, 2012
• Abstract submission deadline: April 1, 2012
• Conference location: Sheraton Denver Downtown Hotel, Denver, Colorado, USA
• Webpage: http://www.ece.umd.edu/sispad2012

Topics Original papers are solicited in the following subject areas: Electronic Transport in Semiconductor Materials and Devices Device Modeling and Simulation Sensors, Biosensors and Electromechanical Systems Simulation Process and Equipment Modeling and Simulation Compact Models Physical-Level Circuit Simulation New Algorithms for Process and Device Modeling Simulation of Nano and Quantum Devices User Interfaces and Visualization Simulation of Power Devices Photovoltaics and Other Green Technologies

The abstract should describe the nature of the presentation, together with references. The text must be single-spaced with 11pt or 12pt font. The abstract is limited to two pages including figures, tables and references. Abstracts should be submitted in PDF format.

For more information, please visit:

http://www.ece.umd.edu/sispad2012/

NDES 2012 July 11 – 13, 2012, Wolfenbüttel, Germany

The conference aims at stimulating and enabling scientists from all over the world to exchange know-ledge and ideas in the field of nonlinear dynamics and its applications in a friendly atmosphere. Nonlinear phenomena are observed in diverse areas such as physics, biology, economics, electronics and computer science. The conference will cover cutting-edge research in these highly active fields and explore new perspectives of nonlinear dynamics in interdisciplinary applications. The scope of interest includes, but it is not limited to:

• Theory, analysis, modelling, implementations and applications of nonlinear circuits and systems in science, technology and biology
• Nonlinear network analysis
• Neural networks, neurodynamics, robots 
• Nonlinear signal processing: Time-series analysis, communication, coding
• Nonlinear devices: Sensors, lasers
• Bifurcation and chaos, control and synchronisation
• Geodynamics

Wolfgang Mathis (Conference Chair, Organizing Committee)
Ruedi Stoop (Conference Co-Chair, Organizing Committee)

[read more...]

Papers in March 2012

SP-HV: A Scalable Surface-Potential-Based Compact Model for LDMOS Transistors

Yao, W.  Gildenblat, G.  McAndrew, C. C.  Cassagnes, A. 
Abstract | Full Text: PDF (435KB) 

Applicability of Macroscopic Transport Models to Decananometer MOSFETs

Vasicek, M.  Cervenka, J.  Esseni, D.  Palestri, P.  Grasser, T. 

Abstract | Full Text: PDF (790KB) 

Physics-Based Modeling of GaN HEMTs

Vitanov, S.  Palankovski, V.  Maroldt, S.  Quay, R.  Murad, S.  Rodle, T.  Selberherr, S.

Abstract | Full Text: PDF (1220KB) 

A Compact Analytic Model of the Strain Field Induced by Through Silicon Vias

Jan, S.-R.  Chou, T.-P.  Yeh, C.-Y.  Liu, C. W.  Goldstein, R. V.  Gorodtsov, V. A.  Shushpannikov, P. S. 
Abstract | Full Text: PDF (849KB) 

 

 

A Subthreshold Swing Model for Thin-Film Fully Depleted SOI Four-Gate Transistors

Sayed, S.  Hossain, M. I.  Khan, M. Z. R. 
Abstract | Full Text: PDF (138KB) 

 

 

Statistical Variability in Fully Depleted SOI MOSFETs Due to Random Dopant Fluctuations in the Source and Drain Extensions

Markov, S.  Cheng, B.  Asenov, A. 
Abstract | Full Text: PDF (403KB) 

 

 

The Compact Modeling of Channel Potential in Sub-30-nm NAND Flash Cell String

Kang, M.  Lee, K.  Chae, D. H.  Park, B.-G.  Shin, H. 
Abstract | Full Text: PDF (384KB) 

 

 

Measurement of Source Resistance in Top-Contact Organic Thin-Film Transistors

Singh, V. K.  Agrawal, A. K.  Mazhari, B. 
Abstract | Full Text: PDF (249KB) 

 

 

 

Demystifying Surrogate Modeling for Circuits and Systems

Yelten, M.B.  Zhu, T.  Koziel, S.  Franzon, P.D.  Steer, M.B. 
Abstract | Full Text: PDF (1492KB) 

 

 

 

Teaching Memory Circuit Elements via Experiment-Based Learning

Pershin, Y.V.  Ventra, M.D. 
Abstract | Full Text: PDF (1655KB) 

 

 

 

Agilent Technologies Completes Acquisition of Accelicon Technologies' Solutions for Semiconductor Device Modeling

SANTA CLARA, Calif., Feb. 21, 2012
Agilent Technologies Inc. (NYSE: A) today announced that Accelicon Technologies' software solutions and technology for device-level modeling and validation in the electronics industry are now part of Agilent. The two companies had announced an acquisition agreement on Dec. 1, 2011. Financial details were not disclosed.
The acquisition, led by Agilent's EEsof EDA organization, further enhances Agilent's leadership in semiconductor device modeling. Accurate, verified device models are critical to reduce R&D design cycles as higher frequencies, smaller technology nodes, new materials and device layouts call for more accurate process design kits. As part of the Software and Modular Solutions Division, Agilent EEsof continues to integrate its industry-leading design simulation with real measurements to improve design efficiency for engineers who develop communications systems. These improved tools and processes solve the increasing complexities they face when designing communications systems for aerospace/defense and commercial wireless applications.
Agilent's newly acquired solutions from Accelicon include MBP for device-level extraction and model generation, MQA for device-level model validation and AMA for advanced model analysis, including layout effects.
Accelicon was founded in 2002 by noted industry veteran Dr. Xisheng Zhang, who has now joined Agilent along with former Accelicon CEO Tim K. Smith. The majority of the former Accelicon employees are located in Beijing; they are also now part of Agilent.

8th International Conference on Organic Electronics

Tarragona, Spain June 25‐27, 2012 

Organic electronics is a rapidly growing technology that is anticipated to compare with conventional microelectronics in the near future to make transistor circuits, displays and solar cells. Other application like sensors are expected. The International Conference on Organic Electronics was held from 2005 to 2008 in Eindhoven, The Netherlands. In 2009, ICOE moved to Liverpool, United Kingdom, in 2010 to Paris, in 2011 in Rome, while the 2012 edition will be held at the campus of University Rovira i Virgili (URV) in Tarragona, Spain. The conference intends to cover all aspects of organic electronics, including materials and chemistry, transistors, OLEDs, photovoltaic cells, circuits and circuit design, manufacturing and inclusion in systems. Technical areas include, but are not limited to: 

• Materials and chemistry 
• Transistors 
• OLEDs Photovoltaic cells 
• Circuits and circuit design 
• Manufacturing and inclusion in systems 
• Modelling 

The conference will be held in coordination with two other events, partially related to the topic: the 10th Graduate Student Meeting on Electronic Engineering (June 21-22) and the 2nd International Training Course on Compact Modelling (TCCM 2012) (June 28-29).

[read more...]

[mos-ak] Final Program MOS-AK/GSA India Workshop on March 16-18, 2012

Final Program MOS-AK/GSA India Workshop on March 16-18, 2012
============================================================
http://www.mos-ak.org/india/

* Venue:
========
Jaypee Institute of Information Technology (JIIT),
A-10, Sector-62, Noida (U.P.), India
Phone: 0120-2400973-976, 2400987
http://www.mos-ak.org/india/#Venue

* Workshop Registration Form
============================
http://inae.org/contents/Registration%20Form.pdf

* Agenda:
=========
http://www.mos-ak.org/india/
with CMOS technology and SPICE Models Tutorial by Dr. N.D. Arora,
Silterra, Malaysia

Organizing MOS-AK/GSA Committee:
================================
A.B. Bhattacharyya, Emeritus Professor, JIIT, India (Chair)
S.C. Saxena, Vice Chancellor, JIIT, Noida (Host)
Ehrenfried Seebacher, austriamicrosystems AG, Austria (Co-Chair)
Wladek Grabinski, MOS-AK (European Arrangements Co-Chair)
M.J. Zarabi, Chairman, Vice-President, Microelectronics Forum INAE New
Delhi, India
Varambally Rajamohan, ST Microelectronics, India
Shantanu Mahapatra, IISc, India
Rajamohan Varambally, ST Microelectronics, Noida, India
Kulbhushan Misri, Freescale, Noida, India
M. Jagdesh Kumar, IIT Delhi, India
Manoj Saxena, Delhi University, South Campus, New Delhi, India

Extended MOS-AK/GSA Committee:
==============================
http://www.mos-ak.org/committee.html

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2nd Training Course on Compact Modeling

Building on the success of its first edition in 2012, the 2nd Training Course on Compact Modeling (TCCM) will be held in Tarragona (Catalonia, Spain) on June 28-29 2012. It will be organized by will be organized by the NEPHOS Group, of the Department of Electronic, Electrical and Automatic Control Engineering at the Universitat Rovira i Virgili (Tarragona).. The General Chairman is Prof. Benjamin Iñiguez.

The Training Course on Compact Modeling will consist of 12 of lectures addressing relevant topics in the compact modeling of advanced electron devices. These lectures will be conducted by top experts in the field. Most of the lectures will target compact modeling issues applicable to many electron devices. In particular, emphasis will be given on MOSFETs (bulk, SOI, Multi-Gate and High Voltage MOS structures) and HEMTs.

The Training Course on Compact Modeling is an event sponsored by the FP7 “COMON” (COmpact MOdelling Network) IAPP Project (which is coordinated by the Universitat Rovira i Virgili) in collaboration with the IEEE EDS Compact Modeling Technical Committee.

The final programme will be published very soon. Registration will be cheap. It will include lunches, coffe breaks and a Gala Dinner on June 28, in a nice restaurant with TV screens to watch the Semifinals match of the Soccer European Cup ...

Besides, on June 25-27 the same group at URV will organize 8th International Conference on Organic Electronics (ICOE 2012) also in Tarragona. Participants to this Training Course will have a reduced fee for ICOE 2012.


Tarragona is located in the south of Catalonia, in the northeast corner of the Iberian Peninsula. Tarraco (its Roman name) was one of the most important cities in the Roman Empire.
On 30 November 2000, the UNESCO committee officially declared the Roman archaeological complex of Tàrraco a World Heritage Site.

Tarragona can be easily reached from Barcelona Airport by bus and train. It is about 100 Km South from Barcelona. Besides, Reus Airport (less than 15 Km from Tarragona) receives flights from many European cities in the summer.

Tarragona can be easily reached from Barcelona Airport by bus and train. It is about 100 Km South from Barcelona. Besides, Reus Airport (less than 15 Km from Tarragona) receives flights from many European cities in the summer.

Speaking about Tarraco's climate, the famous Roman poet Virgil wrote: "The climate blends and confuses the seasons singularly, so that all the year seems an eternal spring." Thanks to its temperate climate, with an average yearly temperature of 23ºC, its clean beaches with fine and gloden sand, and its singular artistic and architectural heritage, Tarragona is one of the most important tourism hubs in Europe.

I strongly encourage all people interested in compact modeling to attend the 2nd Training Course on Compact Modeling!