Dec 13, 2016

[paper] A surface potential large signal model for AlGaN/GaN HEMTs

A surface potential large signal model for AlGaN/GaN HEMTs
Q. Wu, Y. Xu, Z. Wen, Y. Wang and R. Xu
2016 11th EuMIC, London, UK, 2016, pp. 349-352

doi: 10.1109/EuMIC.2016.7777562

Abstract: This paper presents an accurate analytical surface-potential-based compact model for AlGaN/GaN HEMTs for SPICE-like circuit simulation. Considering the important energy level E0, an easy-implemented analytical continuous expression for the fermi level position Ef was deduced to obtain the surface potential (SP) φs. Then analytical core models for intrinsic charge and drain current are derived based on φs. The model has been implemented in Agilent ADS by using symbolic defined device. Excellent agreement of DC I-V, fundamental output power, power added efficiency and gain is obtained for the first time compared with measurement results. Moreover, the effect of physical parameter such as the barrier thickness d on device characteristic is researched on the basic of this model. The results show that the proposed physical based model can be useful for technological parameters analysis and optimization of process.

[read more: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7777562&isnumber=7777458]

Dec 12, 2016

Writing a science/tech book, is it that hard?

Writing a science/tech book, is it that hard?


As a microwave engineer Errikos Lourandakis, PhD, a senior R&D engineer at Helic Inc., started with RF device characterization while working on his PhD. He got fascinated about it and gradually devoted much of his time in the lab (see his lab pic below), though RF and Microwave Measurements were just a vehicle for microwave circuit design that was his actual PhD topic. After 10+ years in academia and industry, recently he has also published his new book "On-Wafer Microwave Measurements and De-embedding"

Errikos' RF and mm-Wave Measurement Lab
Is it worth it? [read more...]

[Fellowship] Physics Based Modeling Simulation and Electrical Characterization

Physics Based Modeling Simulation and Electrical Characterization 
of Quantum Effects in Multigate MOSFETs
[DRDO Fellowship]

Dr. Vimala Palanichamy is looking for Junior Research Fellowship (INR 25000 Stipend per Month) for this project funded by Defense Research and Development Organization (DRDO), Government of India. Please refer below advertisement for applying for Junior Research Fellowship for working on the project: 

Nov 29, 2016

Investigation of Gate Direct-Current and Fluctuations in Organic p-Type Thin-Film Transistors #papers https://t.co/IS3MAiWqZY


from Twitter https://twitter.com/wladek60

November 29, 2016 at 02:51PM
via IFTTT

Nov 25, 2016

[paper] RESURF Model and Electrical Characteristics of Finger-Type STI Drain Extended MOS Transistors

RESURF Model and Electrical Characteristics of Finger-Type STI Drain Extended MOS Transistors
H. C. Tsai, R. H. Liou and C. Lien
IEEE Transactions on Electron Devices
vol. 63, no. 12, pp. 4603-4609, Dec. 2016

Abstract: Finger-type shallow trench isolation (finger STI) drain extended MOS transistors are fabricated and its electrical characteristics is studied. Polyplate on a finger STI served as a reduced surface field is adopted to enhance breakdown voltage (BV) by reducing the effective doping concentration of the drain extension (DE) finger. The conformal mapping method, which relates the reduction of the doping concentration to the width (zo) of the DE finger, the gap (zd) between the polyplate and the DE finger, and the STI depth (ys), is used to estimate the reduction of the doping concentration theoretically. Based on this reduced doping concentration, a BV model is derived. The predictions of this model agree very well with the experimental data.

Keywords: Conformal mapping, Doping, Electric breakdown, MOS devices, Semiconductor process modeling, Silicon, Transistors, Drain extended MOS (DEMOS), Lateral double Diffused MOS (LDMOS), poly field plate, reduced surface field (RESURF)

doi: 10.1109/TED.2016.2605504
[read more...]