New to this edition:
- Energy bands and the energy barrier viewpoint are integrated into the discussion in a smooth, simple manner
- Expanded discussion of small-dimension effects, including velocity saturation, drain-induced barrier lowering, ballistic operation, polysilicon depletion, quantum effects, gate tunneling current, and gate-induced drain leakage
- Expanded discussion of small-signal modeling, including gate and substrate current modeling and flicker noise
- New chapter on substrate nonuniformity and structural effects, discussing transversal and lateral (halo) doping nonuniformity, stress and well proximity effects, and statistical variability
- A completely re-written chapter on modeling for circuit simulation, covering the considerations and pitfalls in the development of models for computer-aided design
- Extensively updated bibliography
- An accompanying website includes additional details not covered in the text, as well as model computer code
