Wednesday, 31 August 2011

Operation and Modeling of the MOS Transistor

Yannis Tsividis and Colin McAndrew


New to this edition:

  • Energy bands and the energy barrier viewpoint are integrated into the discussion in a smooth, simple manner
  • Expanded discussion of small-dimension effects, including velocity saturation, drain-induced barrier lowering, ballistic operation, polysilicon depletion, quantum effects, gate tunneling current, and gate-induced drain leakage
  • Expanded discussion of small-signal modeling, including gate and substrate current modeling and flicker noise
  • New chapter on substrate nonuniformity and structural effects, discussing transversal and lateral (halo) doping nonuniformity, stress and well proximity effects, and statistical variability
  • A completely re-written chapter on modeling for circuit simulation, covering the considerations and pitfalls in the development of models for computer-aided design
  • Extensively updated bibliography
  • An accompanying website includes additional details not covered in the text, as well as model computer code
ISBN-10: 0195170156 | ISBN-13: 978-0195170153 | Edition: 3

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