IEEE CASS IIT Roorkee offline Workshop on Robust and Reliable VLSI Circuits Design

IEEE CASS SBC IIT Roorkee in collaboration with IEEE UP Section and some industry partners is organizing a workshop entitled "Robust and Reliable VLSI Circuits". This is a three-day residential workshop to learn the aspects of reliable and robust design in VLSI circuits from the leading academic/industrial experts. 

The benefits of this workshop to the participants will be multifold:

1. Participants will get an opportunity to interact with leading researchers both from academic and the industry.

2. Participants will get hand-on experience on various EDA tools.

3. The participants will get the opportunity to present their recent domain work to the experts.

For Registration click here

To know more visit the R2VC website at 

https://r2vc.netlify.app/

Date: 7-9 April, 2023

Venue: Indian Institute of Technology(IIT) Roorkee,

Uttarakhand

Send you queries at - 

ieeecassiitr@gmail.com

Contact us at-

Neha Gupta

9719749045

Kartikay Mani Tripathi 

9810938752

#semiconductors #India #US #innovation

#semiconductors #IndiaUS #innovation #supplychain #semi https://t.co/0FiCjCUg8X

— Wladek Grabinski (@wladek60) Mar 13, 2023

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from Twitter https://twitter.com/wladek60

March 13, 2023 at 09:56AM
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AACD 2023 --- Final Program

We, AACD Organizers, are proud to announce the final program the 31^st Advances in Analog Circuit Design Workshop (AACD23) held at Carinthia University of Applied Sciences (FH Karnten) in Villach, Austria on April, 12^th-14^th, 2023.

Early-bird discounted registration is available till March 19^th 2023.

Workshop Registration includes participation to the sessions, pdf documentation, lunches and coffee breaks for the three days, Welcome Cocktail (on April, 12^th) and Gala Dinner (on April, 13^th).

For any further information:

• Visit http://www.mbtechnoservices.com/aacd23
• Contact AACD23 General Chairman, prof. Andrea Baschirotto (andrea.baschirotto@unimib.it)

We look forward to meeting you in Villach!!!!

Andrea Baschirotto
AACD23 General Chairman

Hello world in #electornics https://t.co/xXWbkqxlen #semi [https://t.co/CYopGZA4rp] Congratulations, you are now an electrical engineer! 😀 https://t.co/eUc1iStenR

Hello world in #electornics https://t.co/xXWbkqxlen #semi [https://t.co/CYopGZA4rp] Congratulations, you are now an electrical engineer! 😀 https://t.co/eUc1iStenR

— Wladek Grabinski (@wladek60) Mar 10, 2023

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from Twitter https://twitter.com/wladek60

March 10, 2023 at 09:11PM
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[paper] Cryogenic Characteristics of InGaAs MOSFET

L. Södergren, P. Olausson and E. Lind

Cryogenic Characteristics of InGaAs MOSFET

in IEEE TED, vol. 70, no. 3, pp. 1226-1230, March 2023,

DOI: 10.1109/TED.2023.3238382

Abstract: We present an investigation of the temperature dependence of the current characteristic of a long-channel InGaAs quantum well MOSFET. A model is developed, which includes the effects of band tail states, electron concentration-dependent mobility, and interface trap density to accurately explain the measured data over all modes of operation. The increased effect of remote impurity scattering is associated with mobility degradation in the subthreshold region. The device has been characterized down to 13 K, with a minimum inverse subthreshold slope of 8 mV/dec and a maximum ON-state mobility of 6700 cm2/Vs and with values of 75 mV/dec and 3000 cm2/Vs at room temperature.

FIG: Measured transfer characteristics at 13, 100, and 300 K together with the fit model with

(a) VDS=50 mV and (b) VDS=500 mV.