#US-#Slovak #processor company in IPCEI bid

[https://t.co/MgFRrKmqCT] #US-#Slovak #processor company in IPCEI bid https://t.co/SViTuylPHv #semi https://t.co/ntjlULnU7J

— Wladek Grabinski (@wladek60) Jan 26, 2022

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from Twitter https://twitter.com/wladek60

January 26, 2022 at 10:25AM
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India Semiconductor Mission is inviting applications for CEO, CTO, CFO

India Semiconductor Mission <ism-dic@gov.in> is inviting applications for CEO, CTO, CFO to facilitate the Semicon India journey #hiring #recruitmentdrive #semiconductor #semi #india #ceo #cto #cfo https://t.co/Q1wl7i8SlX

— Wladek Grabinski (@wladek60) Jan 20, 2022

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January 20, 2022 at 03:49PM
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Over 400 exhibition pieces from Łukasiewicz-IMiF have been given to the National Museum of Technology in Warsaw

Over 400 exhibition pieces from Łukasiewicz – IMiF have been given to the National Museum of Technology in Warsaw and you are invited to the #museum🏛️! #exhibition #technology #science #semi https://t.co/Os6AXL4W9B

— Wladek Grabinski (@wladek60) Jan 20, 2022

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[paper] Metal-Oxide Memristor Compact Model

Eugeny Ryndin,Natalia Andreeva and Victor Luchinin

Compact Model for Bipolar and Multilevel Resistive Switching in Metal-Oxide Memristors

Micromachines 2022, 13(1), 98; Special Issue Amorphous Oxide Semiconductor-Based Memristive Devices and Thin-Film Transistors

DOI: 10.3390/mi13010098

  
* Electrotechnical University “LETI”, Saint Petersburg (RU)

Abstract The article presents the results of the development and study of a combined circuitry (compact) model of thin metal oxide films based memristive elements, which makes it possible to simulate both bipolar switching processes and multilevel tuning of the memristor conductivity taking into account the statistical variability of parameters for both device-to-device and cycle-to-cycle switching. The equivalent circuit of the memristive element and the equation system of the proposed model are considered. The software implementation of the model in the MATLAB has been made. The results of modeling static current-voltage characteristics and transient processes during bipolar switching and multilevel turning of the conductivity of memristive elements are obtained. A good agreement between the simulation results and the measured current-voltage characteristics of memristors based on TiOx films (30 nm) and bilayer TiO2/Al2O3 structures (60 nm/5 nm) is demonstrated.

Fig: Structures of the memristors based on TiOx (a) and TiO2/Al2O3 (b) films.

Acknowledgements: This research was funded by the Ministry of Science and Higher Education of the Russian Federation, Grant No FSEE-2020-0013.

[paper] Pseudo-morphic PHEMT: Numerical Simulation Study

Khaouani Mohammed, Hamdoune Abdelkader, Guen Ahlam Bouazza, Kourdi Zakarya, Hichem Bencherif

An Improved Performance of Al0.25Ga0.75N/AlN/GaN/Al0.25Ga0.75N Pseudo-morphic High Electron Mobility Transistor (PHEMT): 

Numerical Simulation Study

IC-AIRES 2021. Lecture Notes in Networks and Systems, vol 361. Springer

DOI: 10.1007/978-3-030-92038-8_80

1. Hassiba Benbouali, Chlef, Algeria

2. University of Abou-Bakr Belkaid, Tlemcen, Algeria
3. Center Exploitation Satellite Communications Agency of Space Oran, Algeria
4. University of Mostefa Benboulaid, Batna, Algeria 

Abstract: In this paper a 9nm T-shaped gate length, Pseudo-morphic High Electron Mobility Transistor (pHEMT AlGaN/AlN/GaN/AlGaN) is studied; we use TCAD software. DC, AC and RF performances assessment allow to exhibit interesting results such as a maximum drain current IDSmax=35mA at VGS=0V, a knee voltage Vknee=0.5V with ON-resistance Ron=0.8Ω-mm, a sub-threshold swing of 75mV/decade, a maximum transconductance value gm=160mS/mm, a DIBL of 36mV/V, a drain lag of 8.5%, a cut-off frequency of 110GHz, a maximum oscillation frequency of 800GHz, and very suitable breakdown voltage VBR of 53.1V. This device can be used in radar, high power and amplifier applications.