Oct 19, 2021

Apple Unveils New M1 Pro, Monster M1 Max SoCs



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Oct 13, 2021

President Macron wants #EU to double its #semi  #production



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[paper] Parameter Extraction of Power MOSFET Models

Michihiro Shintani, Aoi Ueda and Takashi Sato
Accelerating Parameter Extraction of Power MOSFET Models Using Automatic Differentiation
IEEE Transactions on Power Electronics (2021)
DOI:  10.1109/TPEL.2021.3118057
 
Graduate School of Science and Technology, Nara Institute of Science and Technology, Ikoma (J)
Graduate School of Informatics, Kyoto University (J)
 

Abstract: The extraction of the model parameters is as im- portant as the development of compact model itself because simulation accuracy is fully determined by the accuracy of the pa- rameters used. This study proposes an efficient model-parameter extraction method for compact models of power MOSFETs. The proposed method employs automatic differentiation (AD), which is extensively used for training artificial neural networks. In the proposed AD-based parameter extraction, gradient of all the model parameters is analytically calculated by forming a graph that facilitates the backward propagation of errors. Based on the calculated gradient, computationally intensive numerical differentiation is eliminated and the model parameters are efficiently optimized. Experiments are conducted to fit current and capacitance characteristics of commercially available silicon carbide MOSFET using power MOSFET models having 13 model parameters. Results demonstrated that the proposed method could successfully derive the model parameters 3.50× faster than a conventional numerical-differentiation method while achieving the equal accuracy.
Fig: Backward propagation mode. The dashed arrows indicate the path from E to SCALE.
The propagated values on the path in the backward propagation are highlighted

Acknowledgment: This work was partially supported by JST-OPERA Program Grant Number JPMJOP1841, Japan. The part of this work is also supported by JSPS KAKENHI Grant 20H04156 and 20K21793.







[paper] MEMS Sensors Reliability

M. Hommela, H. Knaba, S. Galal Yousefb
Reliability of automotive and consumer MEMS sensors - An overview
Microelectronics Reliability (114252) online Oct. 11, 2021
DOI: 10.1016/j.microrel.2021.114252

a Robert-Bosch-GmbH, Automotive Electronics, Tübinger Str. 123, 72762 Reutlingen, Germany
b Bosch Sensortec GmbH, Gerhard-Kindler-Str. 9, 72770 Reutlingen, Germany


Abstract: In our daily life, sensors play more and a more important role. They take over many functions in the automotive world as well as in consumer products with an increasing dissemination of the internet of things. In addition, they offer a broad variety of new applications. Sensors are typically build up in a package including a sensing element (e.g. micromechanical structures in acceleration sensors or membranes in gas sensors, etc.) and a microelectronic chip to evaluate the sensor data. This article will give an overview, how the reliability of such a system is validated. The challenges for reliability in terms of requirements and qualification for automotive and consumer applications will be discussed. The complex structure of a sensor module in combination with a broad variety of materials implies many possible failure mechanisms, which have to be considered. Some relevant sensor failure mechanisms caused by mechanical shock, thermo-mechanical stress and the influence of humidity on sensor reliability will be shown. The challenges for describing the influence of humidity on the sensor lifetime by an acceleration model will be discussed in detail. Finally, the paper will give an outlook for the reliability challenges of future sensor applications.
Fig: Loads on a MEMS sensor module.

Oct 11, 2021

IEEE-EDS Santa Clara Valley/San Francisco Chapter October Seminar (Webex only)

Title: TCAD/SPICE-Augmented Machine Learning for Defect and Variation Study

Speaker: Dr. Hiu Yung Wong, San Jose State University

Friday, October 15, 2021 at noon – 1PM PDT

Register Here

Webex link will be distributed to the registrant via email.
Organizer contact: John Choi (wonhochoi at micron.com)

Abstract:

In semiconductor technology development, it is desirable to pinpoint the source of defect or variation through electrical measurements, which are non-destructive and have much higher throughput than the traditional failure analysis. This can be achieved through machine learning which is a powerful tool for correlating the electrical characteristics to the nature of the defect/variation. However, a good machine is only possible with enough well-controlled training data, which is difficult to obtain experimentally. TCAD and SPICE simulations which are well-calibrated to experimental data are proposed to generate the training data.

In this talk, we will first demonstrate the use of TCAD to generate data to train machines to deduce the epitaxial layer thickness of Si p-i-n diodes and the workfunction and operating temperature variation of Ga2O3 Schottky Barrier Diodes, based solely on the measured electrical characteristics. We will emphasize the use of minimal domain expertise to obviate the difficulties in feature extraction. We will also demonstrate the techniques that are important to make the TCAD-trained machine applicable to predicting experimental data. SPICE-augmented ML will be demonstrated for detecting contact resistance degradation in inverters. Finally, we will discuss the use of TCAD-augmented machines to help reverse engineering and understand novel devices.

Speaker Bio:

Hiu Yung Wong is an Assistant Professor in the EE department, San Jose State University. He received his Ph.D. degree in Electrical Engineering and Computer Science from the University of California, Berkeley in 2006. From 2006 to 2009, he worked as a Technology Integration Engineer in Spansion. From 2009 to 2018, he was a TCAD Senior Staff Application Engineer in Synopsys, during which he received the Synopsys Excellence Award in 2010. In 2021, he received the NSF CAREER award and the Newnan Brothers Award for Faculty Excellence.

His research interests include the applications of machine learning in simulation and manufacturing, cryogenic electronics, quantum computing, reliability simulations, wide bandgap devices (such as GaN, SiC, Ga2O3, and diamond) simulations, novel semiconductor devices design, and Design Technology Co-Optimization (DTCO). His work has produced 80 papers and 10 issued patents.

Call for Officer(s):

The Santa Clara Valley Chapter of the EDS is seeking candidates to apply for positions on the organizing executive committee for 2022. In particular we are looking for folks interested in becoming webmaster/communications director and secretary, although we welcome applications for treasurer, vice-chair, and chair as well. If you are interested in helping us organize technical talks and otherwise delivering value to EDS members in your local community, please email vijay_narasimhan@ieee.org, EDS SCV Chapter Chair, to express your interest.


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