Jun 22, 2021

#Synopsys buys fab data technology from #BISTel in South Korea to acquire key tools


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June 22, 2021 at 09:53AM
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Jun 20, 2021

German State Of #Bavaria In Talks With #Intel On Chip #Megafactory


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Jun 11, 2021

SB-MOS Symposium at URV Tarragona (SP)


The Symposium on Schottky Barrier MOS (SB-MOS) devices is held in the timeframe of the Graduated Students Meeting of URV on June 30th at the University Rovira i Virgili, Spain. This is the first joint R&D event between the URV and Symposium on SB-MOS.

This year the joint R&D event is sponsored by the URV, THM, the IEEE EDS Spain & Germany Chapter, and organized by Dr. Laurie Calvet (C2N, Palaiseau, France), Prof. Mike Schwarz and Prof. Alexander Kloes (NanoP THM, Germany), Prof. Lluis Marsal (DEEEA, URV), and Prof. Benjamin Iniguez (DEEEA, URV) and the staff at the URV.

Our joint R&D event starts on June 30th with the Symposium of SB-MOS. On July 1st and July 2nd the Graduated Students Meeting is held. The following speakers have confirmed their invitations to SB-MOS: Dr. Radu Sporea (Advanced Technology Institute, University of Surrey, Guildford, UK), Dr. Laurie E. Calvet (C2N, CNRS-Université Paris-Sud, France), Prof. Walter Weber (TU Vienna) and further.

Attendees are welcome to participate in our joint R&D event. Further information is present at
Symposium of SBMOS
Graduated Student Meeting

To register for the event use the vTools of IEEE with the following link:
https://meetings.vtools.ieee.org/m/272299

Important dates:
  • Event Announcement/CFP: May 2021
  • Final Program: June 2021
  • Registration deadline: June 27, 2021
  • Symposium SB-MOS devices: June 30, 2021
  • Graduated Students Meeting on Electronics Engineering: July 1st - 2nd, 2021


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[paper] SPICE Modeling of Cycle-to-Cycle Variability in RRAM Devices

E.Salvadora, M.B.Gonzalezb, F.Campabadalb, J.Martin-Martineza, R.Rodrigueza, E.Mirandaa
SPICE Modeling of Cycle-to-Cycle Variability in RRAM Devices
Solid-State Electronics; In Press, Journal Pre-proof
Available online 29 May 2021, 108040
DOI: 10.1016/j.sse.2021.108040

a) Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona, 08193 Cerdanyola del Valles, Spain
b) Institut de Microelectrònica de Barcelona, IMB-CNM, CSIC, 08193 Cerdanyola del Valles, Spain

Abstract: In this work, we investigated how to include uncorrelated cycle-to-cycle (C2C) variability in the LTSpice quasi-static memdiode model for RRAM devices. Variability in the I-V curves is first addressed through an in-depth study of the experimental data using the FITDISTRPLUS package for the R language. This provides a first approximation to the identification of the most suitable model parameter distributions. Next, the selected candidate distributions are incorporated into the model script and used for carrying out Monte Carlo simulations. Finally, the experimental and simulated observables (set and reset currents, transition voltages, etc.) are statistically compared and the model estimands recalculated if it is necessary. Here, we put special emphasis on describing the main difficulties behind this seemingly simple procedure.

Figure 4. Comparison of experimental and simulated parameter distributions: 
a) IHRS, b) VT, c) ILRS, and d) VR.

Acknowledgements: This work was supported by the Spanish Ministry of Science, Innovation and Universities through projects TEC2017-84321-C4-1-R, TEC2017-84321-C4-4-R, and PID2019-103869RB-C32.

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Jun 10, 2021

The U.S. Senate passed a bill offering $52 billion to bolster domestic #chip #semi manufacturing


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June 10, 2021 at 03:47PM
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