[EETimes] #ISSCC Plenary: A Bright #Foundry Future, according to #TSMC chairman Mark Liu https://t.co/NaPLNoyLhH #semi #3nm https://t.co/YPQgs1YLDp

[EETimes] #ISSCC Plenary: A Bright #Foundry Future, according to #TSMC chairman Mark Liu https://t.co/NaPLNoyLhH #semi #3nm pic.twitter.com/YPQgs1YLDp

— Wladek Grabinski (@wladek60) February 16, 2021

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from Twitter https://twitter.com/wladek60

February 16, 2021 at 11:14AM
via IFTTT

First #opensource smartphone #ophthalmoscope: oDocs sets world record https://t.co/qcGFsogcyc #semi https://t.co/E8sj2P4req

First #opensource smartphone #ophthalmoscope: oDocs sets world record https://t.co/qcGFsogcyc #semi pic.twitter.com/E8sj2P4req

— Wladek Grabinski (@wladek60) February 15, 2021

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from Twitter https://twitter.com/wladek60

February 15, 2021 at 09:44AM
via IFTTT

[book] Moore's Law: The Untold Story

Daniel Foty 

Moore's Law: The Untold Story 

CreateSpace Independent Publishing Platform 

August 18, 2017; pp. 400; ISBN: 978-1974698431 

 

“Moore's Law' has entered popular parlance in a variety of ways. But what exactly is "Moore‘s Law?" And how did it happen?

In this book. Daniel Foty - a PhD. engineer and commercial-grade veteran of more than twenty-f‌ive years in the semiconductor industry and allied f‌ields - takes the reader through the tangled and bizarre sequence of events that eventually led to ‘Moore’s Law” and the ubiquitous silicon technology which has resulted. The deep roots of this remarkable story go back some twenty centuries, and that story involves an unlikely collection of happenstances. Gifts of nature, and totally unexpected developments. Along the way, the reader meets many of the players in that story - from the well-known (such as Benjamin Franklin and Gordon Moore) to the (unfortunately) less—well-known (such as Jack Kilby and Robert Noyce). In the f‌inal analysis, “Moore's Law" was neither imposed nor discovered - but instead represents a remarkable concatenation of a series of natural flukes that compounded into a juggernaut. 

Written for the non-specialist, the untold story of “Moore's Law" is told here with fresh depth and proper historical insight.

[paper] ACM) Model in VHDL-AMS

A. S. Kumar, Ch. Rekha, Y. D. S. Raju 

Behavioral Modeling of the Advanced Compact MOSFET (ACM) Model with VHDL-AMS 

OAIJSE, Vol. 6, Issue 1, January 2021 

ISSN (Online) 2456-3293 

*Holymary Institute Of Technology And Science, Bogaram(V), Keesara (M), Hyderabad

Abstract: This paper reports a VHDL-AMS implementation of the Advanced Compact MOSFET (ACM) model. This behavioral model aims at being a reference model for ACM code developers, helping to implement and maintain simulators specic code. Simulation results from classical testbenches are presented and con_rm the correctness of the proposed model.

Fig: The used methodology propose this testbench [ref]

[ref] A. L. T. B. da Fonseca and F. R. de Sousa, "Behavioral modeling of the Advanced Compact MOSFET (ACM) model with VHDL-AMS," 2008 Joint 6th International IEEE Northeast Workshop on Circuits and Systems and TAISA Conference, Montreal, QC, 2008, pp. 169-172

doi: 10.1109/NEWCAS.2008.4606348.

Abstract: This paper reports a VHDL-AMS implementation of the Advanced Compact MOSFET (ACM) model. This behavioral model aims at being a reference model for ACM code developers, helping to implement and maintain simulators specific code. Simulation results from classical testbenches are presented and confirm the correctness of the proposed model.

[symposium] ISDCS 2021 Hiroshima University

ISDCS 2021

3-5, March 2021

Hiroshima University, Higashi-Hiroshima, Japan

The ISDCS is a premium international forum for scholars, scientists, educators, students and engineers to exchange their latest findings and technological advances in the field of devices, circuits and systems.

Keynote Speakers

• Prof. Parthasarathi Chakrabarti, Director, IIEST Shibpur and Department of Electronics Engineering, IIT(BHU), India
  "Advanced Materials and Methods for Fabrication of Thin-film Transistor (TFT)-based Sensors"
• Prof. Shinji Kaneko, Hiroshima University, Japan
  "SDGs Initiatives at Hiroshima University: Integrating Global Strategy and Regional Vitalization"

Invited Speakers

• Prof. Sanatan Chattopadhyay, University of Calcutta, India
  "Voltage Assisted Quantum Dot Based MOS Devices for Electronic and Optoelectronic Applications"
• Prof. Partha Bhattacharya, IIEST Shibpur, India
  "Performance Improvement of Graphene Derivative based Gas sensors: Role of Functional Group Tuning and Ternary Junction Formation"
• Prof. Hafizur Rahaman, IIEST Shibpur, India
  "Tunnel Field Effect Transistors: Challenges and Opportunities"
• Prof. Nillohit Mukherjee, IIEST Shibpur, India
  "Metal Oxide Semiconductors with Carbon Nanomaterials for Efficient Supercapacitive Type Energy Storage Devices"
• Prof. Shigeyasu Uno, Ritsumeikan University, Japan
  "Electrochemical Impedance Sensor for Non-invasive Living Cell Monitoring toward CMOS Cell Culture Monitoring Platform"
• Mr. Shigeru Shiratake, Corporate Vice President, DRAM, Emerging Memory Process Integration and Device Technology Micron Technology, Inc., USA
  "Challenges for DRAM scaling and performance enhancement"
• Prof. Rihito Kuroda, Tohoku University, Japan
  TBD

Previous Conference:

• ISDCS 2020, Kolkata, India
• ISDCS 2019, Higashi-hiroshima, Japan
• ISDCS 2018, Kolkata, India