Broadband Measurements to 220 GHz

VectorStar ME7838G 70 kHz to 220 GHz Single Sweep VNA Measurements and On-Wafer Calibrations

• Miniature mmWave MA25400A NLTL module connects directly to probes without cables for best dynamic range and stability
• MPI TITAN Probes available in 50, 75, and 100 um pitch
• Probes are field replaceable

On-wafer calibrations:

• SOLT up 40 or 70 GHz if standards provide required performance
• LRM, ALRM, LRRM, and multiline TRL up to 220 GHz
• SOLR when thru is not 0 length, is not well matched, insertion loss is less known, and there is no .s2p file describing the thru

Calibration substrates:

• Available from MPI
• When possible, use a ceramic chuck to minimize the potential for multimode parasitic propagation.
• Alternatively, use an isolation wafer on metal chuck if available

[paper] Wearable Energy Harvester

A Piezoelectric-Transducer-Biased 3-D Photosensitive Thin-Film Transistor

as a Dual-Mode Wearable Energy Harvester

Emad Iranmanesh¹, Weiwei Li^2,3, Ahmed Rasheed^2,3, and Kai Wang^2,3 (Member IEEE)

IEEE EDL, Vol. 41, No. 9, Sept. 2020

DOI: 10.1109/LED.2020.3009685

¹School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510006, China.
²Guangdong Provincial Key Laboratory of Display Material and Technology, Sun Yat-sen University, Guangzhou 510006, China
³State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510006, China

Abstract: This letter reports on a dual-mode wearable energy harvester that utilizes both piezoelectric and photoelectric effects. It integrates a piezoelectric transducer with a 3-D photosensitive dual-gate thin-film transistor (DGTFT) as a rectifier and a buffer. The energy conversion efficiency is enhanced by reducing the internal resistance of the 3-D photosensitive DGTFT upon light illumination. Such a dual-mode energy harvester is promising for wearable electronics.

Fig.: a) Schematic diagram of the proposed wearable dual-mode energy harvester formed by a polyvinylidene difluoride (PVDF) transducer integrated with a self-driven diode-connected 3-D photosensitive DGTFT as a buffer and a rectifier;  b) Equivalent circuit of the proposed dual-mode harvester.

Acknowlwgement: This work was supported by the Guangdong Innovative Research and Entrepreneurial Team Program under Grant 2014ZT05D340

[paper] Compact Models for IGBTs

Advanced physics-based compact models for new IGBT technologies

Arnab Biswas, Maria Cotorogea

Infineon Technologies AG, Germany

Abstract The TRENCHSTOP™ IGBT7 technology is based on the latest micro-pattern trench technology. It provides strongly reduced losses offering a high level of controllability [1]. This technology brings forward new challenges in compact modelling. Current IGBT compact models at Infineon are physics-based subcircuit representations in SPICE syntax. They were developed to run in the circuit simulator SIMetrix, and are manually calibrated. The aim of this work is to present advanced models for the micro-pattern trench IGBT implemented in Verilog-A language, addressing the challenges of compact models in terms of calibration accuracy, simulation run time, model robustness and portability to multiple simulators.

Fig. 3: IGBT technology overview showing schematically

the static excess-carrier density distribution in the plasma region.

[job] Virtual Prototyping-Power Devices

Development Engineer 

Virtual Prototyping-Power Devices 

(f/m/div)*

Your Profile: Delivering quality to the customer is very important to you. You are characterized by a precise and structured way of working and are able to dive deep into technical details. At the same time, your pro-active and communication skills will help you to work together profitably with various colleagues across departments.

You are best equipped for this task if you have:

• A degree in Electrical Engineering, Mathematics, Physics or similar field
• 1 to 3 years of relevant experience in technical field as engineer, ideally within the semiconductor market and with MOS devices, Diodes, IGBTs
• Experience with Unix and/or programming languages (e.g. C++ and Python)
are an advantage

• Skills in relationship building and strong customer orientation
• Experience in working with Spice-based compact models (e.g. PSPICE, SIMETRIX) and preferably experience in working with TCAD process and device simulations
• Very good English communication skills, German is a plus

[read more...]

* The term gender in the sense of the General Equal Treatment Act (GETA) or other national legislation refers to the biological assignment to a gender group. At Infineon we are proud to embrace (gender) diversity, including female, male and diverse.

[paper] Mobility in GC SOI Transistors

Lucas M. B. da Silva¹, Bruna Cardoso Paz², Michelly de Souza¹

Analysis of Mobility in Graded-Channel SOI Transistors Aiming at Circuit Simulation

Journal of Integrated Circuits and Systems; vol. 15, no. 2 pp.1-5 (2020) 

¹Department of Electrical Engineering, Centro Universitário FEI, São Bernardo do Campo, Brazil
²CEA, Leti, Grenoble, France

Abstract: This work presents an analysis of the behavior of the effective mobility of graded-channel FD SOI transistors using an Y-Function-based technique. Low field mobility, linear and quadratic attenuation factors were extracted from two-dimensional numerical simulations. The influence of the length of both channel regions over these parameters was analyzed. The parameters extracted from experimental data were used in a SPICE simulator, showing that it is possible to simulated GC SOI MOSFET using a regular SOI MOSFET model, by adjusting its parameters. This approach presents a percentage error smaller than 7.91% for low VDS.

Fig. Simulated curves of IDS vs. VGS and gm vs. VGS 

for GCSOI nMOSFETs with L= 2 µm and VDS=50 mV.

Acknowledgements: This study was supported by CNPq grants #311466/2016- 8 and #427975/2016-6. Authors would like to acknowledge Prof. Denis Flandre, from UCLouvain for providing the experimental samples.