#paper: K. Xia, "New C∞ Functions for Drain–Source Voltage Clamping in Transistor Modeling," in IEEE TED, vol. 67, no. 4, pp. 1764-1768, April 2020. https://t.co/N9yGopiPNg https://t.co/9AKubeYY5x

#paper: K. Xia, "New C∞ Functions for Drain–Source Voltage Clamping in Transistor Modeling," in IEEE TED, vol. 67, no. 4, pp. 1764-1768, April 2020.https://t.co/N9yGopiPNg pic.twitter.com/9AKubeYY5x

— Wladek Grabinski (@wladek60) April 29, 2020

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April 29, 2020 at 04:16PM
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#paper: E. A. Gutiérrez-D., J. Méndez-V., J. C. Tinoco, E. T. Rios and O. V. Huerta-G., "DC and 28 GHz Reliability of a SOI FET Technology," in IEEE J-EDS, vol. 8, pp. 385-390, 2020. https://t.co/slotpnOx43 https://t.co/sfZjtH0CPq

#paper: E. A. Gutiérrez-D., J. Méndez-V., J. C. Tinoco, E. T. Rios and O. V. Huerta-G., "DC and 28 GHz Reliability of a SOI FET Technology," in IEEE J-EDS, vol. 8, pp. 385-390, 2020. https://t.co/slotpnOx43

pic.twitter.com/sfZjtH0CPq

— Wladek Grabinski (@wladek60) April 29, 2020
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XXII ESCOLA SUL DE MICROELETRÔNICA: EMicro 2020 XXXV SIMPÓSIO SUL DE MICROELETRÔNICA: SIM 2020 27-30 April 2020 Virtual Event: https://t.co/DzzZLK7lIF Recordings: https://t.co/RuFy6pR6Qa #paper https://t.co/bItZC5bjWv

XXII ESCOLA SUL DE MICROELETRÔNICA: EMicro 2020
XXXV SIMPÓSIO SUL DE MICROELETRÔNICA: SIM 2020
27-30 April 2020
Virtual Event: https://t.co/DzzZLK7lIF
Recordings: https://t.co/RuFy6pR6Qa#paper pic.twitter.com/bItZC5bjWv

— Wladek Grabinski (@wladek60) April 29, 2020

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April 29, 2020 at 09:21AM
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#paper: H. Cortes-Ordonez et al., "Parameter extraction and compact drain current model for IGZO transistor from 210K up to 370K," 2020 IEEE Latin America Electron Devices Conference (LAEDC), San Jose, Costa Rica, 2020, pp. 1-5. https://t.co/WDalcLFJsX https://t.co/FJGSnemXhj

#paper: H. Cortes-Ordonez et al., "Parameter extraction and compact drain current model for IGZO transistor from 210K up to 370K," 2020 IEEE Latin America Electron Devices Conference (LAEDC), San Jose, Costa Rica, 2020, pp. 1-5. https://t.co/WDalcLFJsX pic.twitter.com/FJGSnemXhj

— Wladek Grabinski (@wladek60) April 28, 2020

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April 28, 2020 at 05:01PM
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#paper: X. Lu, M. Law, Y. Jiang, X. Zhao, P. Mak and R. P. Martins, "A 4um Diameter SPAD Using Less-Doped N-Well Guard Ring in Baseline 65nm CMOS," in IEEE TED, vol. 67, no. 5, pp. 2223-2225, May 2020. https://t.co/FFxEEIyh8J https://t.co/LGo5VTESKd

#paper: X. Lu, M. Law, Y. Jiang, X. Zhao, P. Mak and R. P. Martins, "A 4um Diameter SPAD Using Less-Doped N-Well Guard Ring in Baseline 65nm CMOS," in IEEE TED, vol. 67, no. 5, pp. 2223-2225, May 2020. https://t.co/FFxEEIyh8J pic.twitter.com/LGo5VTESKd

— Wladek Grabinski (@wladek60) April 27, 2020

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April 27, 2020 at 11:37AM
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