Apr 15, 2020

Fwd: "It is forbidden to spit on cats during plague-time"

-------- Forwarded message FYI ---------
From: John Cooley <jcooley@zeroskew.com>
Date: Wed, Apr 15, 2020 at 5:10 PM
Subject: users on Empyrean XTop ECOs, and Cadence Tempus vs. PrimeTime

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  "It is forbidden to spit on cats during plague-time."

       - Albert Camus, French philosopher (1913 - 1960)
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 Empyrean XTop fills PrimeTime ECO hole is Best of EDA 2019 #8a
            http://www.deepchip.com/items/dac19-08a.html

 Cadence Tempus fast ECOs, sign-off, and MMMC is Best of EDA #8b
            http://www.deepchip.com/items/dac19-08b.html
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 STMicroelectronics: RDC signoff on CPU subsystem & Real Intent RDC
            http://www.deepchip.com/look/see200327-02.html
Mentor whitepaper Calibre faster through DRC deck optimization
            http://www.deepchip.com/look/see190517-01.html




#paper: Lin, P., Li, C., Wang, Z. et al. Three-dimensional memristor circuits as complex neural networks. Nat Electron (2020) https://t.co/9ikrvgQq3z https://t.co/MH0mVWdyVj


from Twitter https://twitter.com/wladek60

April 15, 2020 at 02:51PM
via IFTTT

#paper: Darsen D. Lu, Sourav De, Mohammed Aftab Baig, Bo-Han Qiu and Yao-Jen Lee; A computationally efficient compact model for ferroelectric FETs for the simulation of online training of neural networks; arXiv preprint arXiv:2004.03903, 2020 https://t.co/JBZfgb2jZw https://t.co/AH9NvasJuD


from Twitter https://twitter.com/wladek60

April 15, 2020 at 10:27AM
via IFTTT

Apr 14, 2020

#paper: Meng Zhang and Dragan Damjanovic; Quasi-rayleigh model for modeling hysteresis of piezoelectric actuators; Smart Materials and Structures; DOI: https://t.co/0lOX07NnAU https://t.co/WaSgY5lYML https://t.co/Dux8Lpe4wq


from Twitter https://twitter.com/wladek60

April 14, 2020 at 02:24PM
via IFTTT

ICMTS2020 #paper: Cutoff Frequency Fluctuation in RF-MOSFETs

2020 ICMTS, April 6-9, Edinburgh (UK)
Novel Statistical Modeling and Parameter Extraction Methodology
of Cutoff Frequency for RF-MOSFETs
Chika Tanaka, Yasuhiko Iguchi, Atsushi Sueoka, and Sadayuki Yoshitomi
Memory Division, Kioxia Corporation
2-5-1, Kasama, Sakae-ku, Yokohama, 247-8585, Japan

Abstract: The cutoff frequency fluctuation in RF-MOSFET has been investigated. Detailed analysis for capacitance fluctuation as well as the extraction of an intrinsic MOSFET parameter were performed. The extracted process parameters were verified by the framework of effective mobility. The global statistical model of cutoff frequency was successfully developed in terms of capacitance fluctuation, considering intrinsic (channel and bulk charge) and extrinsic (overlap and fringe) capacitance components separately and identifying the major variability sources for cutoff frequency by using extracted parameter.
Fig: Calculated σfT is plotted against σfT obtained from measured data.