#COVID-19 Related Research and Technologies #Free to Access in #IEEE #Xplore https://t.co/8wtkdHydcI #paper https://t.co/kKCTCwfSCt

#COVID-19 Related Research and Technologies #Free to Access in #IEEE #Xplore https://t.co/8wtkdHydcI#paper pic.twitter.com/kKCTCwfSCt

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Professional #Ventilator Design #OpenSource Today by #Medtronic https://t.co/YkzX6fpU80 https://t.co/KA23i6RVDJ

Professional #Ventilator Design #OpenSource Today by #Medtronic https://t.co/YkzX6fpU80 pic.twitter.com/KA23i6RVDJ

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#paper: N. Zagni et al. "Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-of-the-Roadmap III–V MOSFETs," in IEEE TED, vol. 67, no. 4, pp. 1560-1566, April 2020. https://t.co/wtk1U4sFuB https://t.co/xWzZ5GnQal

#paper: N. Zagni et al. "Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-of-the-Roadmap III–V MOSFETs," in IEEE TED, vol. 67, no. 4, pp. 1560-1566, April 2020. https://t.co/wtk1U4sFuB pic.twitter.com/xWzZ5GnQal

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#paper: X. Li, T. Pu, L. Li and J. Ao, "Enhanced Sensitivity of GaN-Based Temperature Sensor by Using the Series Schottky Barrier Diode Structure," in IEEE EDL, vol. 41, no. 4, pp. 601-604, April 2020 https://t.co/koGfb8GeST https://t.co/LCE1l2wdly

#paper: X. Li, T. Pu, L. Li and J. Ao, "Enhanced Sensitivity of GaN-Based Temperature Sensor by Using the Series Schottky Barrier Diode Structure," in IEEE EDL, vol. 41, no. 4, pp. 601-604, April 2020https://t.co/koGfb8GeST pic.twitter.com/LCE1l2wdly

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conference paper reached 700 reads

M. Bucher, A. Bazigos and W. Grabinski, "Determining MOSFET Parameters in Moderate Inversion," 2007 IEEE Design and Diagnostics of Electronic Circuits and Systems, Krakow, 2007, pp. 1-4.

Abstract: Deep submicron CMOS technology scaling leads to reduced strong inversion voltage range due to non-scalability of threshold voltage, while supply voltage is reduced. Moderate inversion operation therefore becomes increasingly important. In this paper, a new method of determining MOSFET parameters in moderate inversion is presented. Model parameters are determined using a constant current bias technique, where the biasing current is estimated from the transconductance-to-current ratio. This technique is largely insensitive to mobility effects and series resistance. Statistical data measured on 40 dies a 0.25 um standard CMOS technology are used for the illustration of this method.