#paper: X. Li, T. Pu, L. Li and J. Ao, "Enhanced Sensitivity of GaN-Based Temperature Sensor by Using the Series Schottky Barrier Diode Structure," in IEEE EDL, vol. 41, no. 4, pp. 601-604, April 2020 https://t.co/koGfb8GeST https://t.co/LCE1l2wdly

#paper: X. Li, T. Pu, L. Li and J. Ao, "Enhanced Sensitivity of GaN-Based Temperature Sensor by Using the Series Schottky Barrier Diode Structure," in IEEE EDL, vol. 41, no. 4, pp. 601-604, April 2020https://t.co/koGfb8GeST pic.twitter.com/LCE1l2wdly

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conference paper reached 700 reads

M. Bucher, A. Bazigos and W. Grabinski, "Determining MOSFET Parameters in Moderate Inversion," 2007 IEEE Design and Diagnostics of Electronic Circuits and Systems, Krakow, 2007, pp. 1-4.

Abstract: Deep submicron CMOS technology scaling leads to reduced strong inversion voltage range due to non-scalability of threshold voltage, while supply voltage is reduced. Moderate inversion operation therefore becomes increasingly important. In this paper, a new method of determining MOSFET parameters in moderate inversion is presented. Model parameters are determined using a constant current bias technique, where the biasing current is estimated from the transconductance-to-current ratio. This technique is largely insensitive to mobility effects and series resistance. Statistical data measured on 40 dies a 0.25 um standard CMOS technology are used for the illustration of this method.

#paper Y. Nakamura, N. Kuroda, T. Yanagi, H. Sakairi and K. Nakahara, "High-Voltage and High-Current Id–Vds Measurement Method for Power Transistors Improved by Reducing Self-Heating," in IEEE EDS (Open Access), vol. 41, no. 4, pp. 581-584, April 2020. https://t.co/85eA0jPQKb https://t.co/PT6CUQRELM

#paper Y. Nakamura, N. Kuroda, T. Yanagi, H. Sakairi and K. Nakahara, "High-Voltage and High-Current Id–Vds Measurement Method for Power Transistors Improved by Reducing Self-Heating," in IEEE EDS (Open Access), vol. 41, no. 4, pp. 581-584, April 2020. https://t.co/85eA0jPQKb pic.twitter.com/PT6CUQRELM

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#paper: T. Mikolajick, U. Schroeder and S. Slesazeck, "The Past, the Present, and the Future of Ferroelectric Memories," in IEEE TED, vol. 67, no. 4, pp. 1434-1443, April 2020. https://t.co/OmPJ0xf6wU https://t.co/jWifCPdJ1D

#paper: T. Mikolajick, U. Schroeder and S. Slesazeck, "The Past, the Present, and the Future of Ferroelectric Memories," in IEEE TED, vol. 67, no. 4, pp. 1434-1443, April 2020. https://t.co/OmPJ0xf6wU pic.twitter.com/jWifCPdJ1D

— Wladek Grabinski (@wladek60) March 29, 2020

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#paper: Scientists from the POWERlab at #EPFL, have built a nanodevice capable of producing high-power Terahertz (#THz) waves https://t.co/Cl6jBInynx https://t.co/4PIJmN6Jpm

#paper: Scientists from the POWERlab at #EPFL, have built a nanodevice capable of producing high-power Terahertz (#THz) waves https://t.co/Cl6jBInynx pic.twitter.com/4PIJmN6Jpm

— Wladek Grabinski (@wladek60) March 29, 2020

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