IEEE Annual Election: IEEE President-Elect Candidate: DEJAN S. MILOJICIC, PhD https://t.co/YGXMj7XzQM (Nominated by IEEE Board of Directors) Distinguished Technologist; Hewlett Packard Labs Palo Alto, California, USA https://t.co/eCpVS4yzu9 #paper https://t.co/4b8EOTaQMF

IEEE Annual Election: IEEE President-Elect Candidate: DEJAN S. MILOJICIC, PhD https://t.co/YGXMj7XzQM (Nominated by IEEE Board of Directors) Distinguished Technologist; Hewlett Packard Labs Palo Alto, California, USA
https://t.co/eCpVS4yzu9 #paper pic.twitter.com/4b8EOTaQMF

— Wladek Grabinski (@wladek60) August 26, 2019

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August 26, 2019 at 05:36PM
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B. Contreras, G. Ducoudray, R. Palomera and C. Bernal, "Automated Parameter Extraction and #SPICE #Model Modification For Gate Enclosed MOSFETs Simulation," 16th SMACD, Lausanne, Switzerland, 2019, pp. 189-192 https://t.co/nBleBsXkFf

B. Contreras, G. Ducoudray, R. Palomera and C. Bernal, "Automated Parameter Extraction and #SPICE #Model Modification For Gate Enclosed MOSFETs Simulation," 16th SMACD, Lausanne, Switzerland, 2019, pp. 189-192 https://t.co/nBleBsXkFf

— Wladek Grabinski (@wladek60) August 26, 2019

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August 26, 2019 at 03:09PM
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The EPFL HEMT Model is a design-oriented charge-based model for dc operation of AlGaAs/GaAs and AlGaN/GaN-based high-mobility field-effect transistors. https://t.co/KoxvcDSPTh https://t.co/c5fUa76rV7 #paper https://t.co/k5U7l3htU6

The EPFL HEMT Model is a design-oriented charge-based model for dc operation of AlGaAs/GaAs and AlGaN/GaN-based high-mobility field-effect transistors. https://t.co/KoxvcDSPTh https://t.co/c5fUa76rV7 #paper pic.twitter.com/k5U7l3htU6

— Wladek Grabinski (@wladek60) August 23, 2019

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August 23, 2019 at 03:50PM
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#Welsh put £1.3m into #compound process #technology development https://t.co/Jhdwm4WDM8 #paper https://t.co/hmOlw93jdl

#Welsh put £1.3m into #compound process #technology development https://t.co/Jhdwm4WDM8 #paper pic.twitter.com/hmOlw93jdl

— Wladek Grabinski (@wladek60) August 23, 2019

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August 23, 2019 at 03:50PM
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“IEEE EDS MQ at IIT Kanpur: B.Iniguez, URV, Spain: Universal TFT compact model A.Kottantharayil, IIT Bombay: Graphene based devices A.Dixit, IIT Delhi: Multiple Gate FET Modeling Y.Chauhan, IIT Kanpur: Negative Capacitance Transistor https://t.co/bbY1s1g62H #paper

“IEEE EDS MQ at IIT Kanpur:
B.Iniguez, URV, Spain: Universal TFT compact model
A.Kottantharayil, IIT Bombay: Graphene based devices
A.Dixit, IIT Delhi: Multiple Gate FET Modeling
Y.Chauhan, IIT Kanpur: Negative Capacitance Transistor
https://t.co/bbY1s1g62H #paper

— Wladek Grabinski (@wladek60) August 23, 2019

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August 23, 2019 at 03:50PM
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