May 19, 2018

[mos-ak] [Final Program] 3rd Sino MOS-AK Compact Modeling Workshop in Beijing, June 14-16 2018

3rd Sino MOS-AK Compact Modeling Workshop
Beijing, June 14-16 2018
Final Program 

Together with Professor Yan Wang, Tsinghua University, Honorary Committee; George Ponchak, T-MTT Editor and Yuhua Cheng, PKU, Advisory Committee as well as Min Zhang, XMOD, Organizing Committee General Co-Chair, we have pleasure to invite to the 3rd Sino MOS-AK Compact Modeling Workshop which will be organized successively in China between June 14-16, 2018

Scheduled,3rd subsequent MOS-AK modeling workshop organized in China, aims to strengthen a network and discussion forum among experts in the field, enhance open platform for information exchange related to compact/SPICE modeling and Verilog-A standardization, bring people in the compact modeling field together, as well as obtain feedback from technology developers, circuit designers, and TCAD/EDA tool developers and vendors. The MOS-AK workshop program is available online:

3rd Sino MOS-AK Compact Modeling Workshop program includes
Day 1 (June 14): MOS-AK Tutorial Day
Day 2 (June 15): MOS-AK SPICE/Verilog-A Modeling Workshop
Day 3 (June 16): MOS-AK SPICE/Verilog-A Modeling Workshop
Venue: 
会议场所:清华大学FIT-楼,在紫光国际国际交流中心旁
close to Tsinghua Unisplendour International Center
(any related inquiries can be sent to register@mos-ak.org)

Workshop Secretary:
Li Zhang
Office: +86 010 62771733;Mobile: +86 138 01302877
Email: zhangli95@tsinghua.edu.cn

Postworkshop Publications:
Selected best MOS-AK technical presentation will be recommended for further publication
in a special issue of the International Journal of High Speed Electronics and Systems


WG190518

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May 9, 2018

Advanced #FDSOI Device Design: The U-Channel Device for #7nm Node and Beyond https://t.co/fGaY4WQbu2 #paper


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May 09, 2018 at 09:01PM
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May 2, 2018

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May 02, 2018 at 12:25PM
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Universal Core #Model for Multiple-gate Field-effect Transistors with Short Channel and Quantum Mechanical Effects - IOPscience https://t.co/vDJ9kII7pm


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May 02, 2018 at 12:25PM
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Apr 28, 2018

A Physics-Based Compact #Model for Transition-Metal Dichalcogenides Transistors With the Band-Tail Effect - IEEE Journals & Magazine https://t.co/vJ0ZNcV7zw https://t.co/vJ0ZNcV7zw


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April 28, 2018 at 12:43PM
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