Substrate Noise Coupling Mechanisms in Lightly Doped CMOS Transistors
Bronckers, S.; Van der Plas, G.; Vandersteen, G.; Rolain, Y.;
Interuniversity Microelectronics Centre (IMEC), Leuven, Belgium
Interuniversity Microelectronics Centre (IMEC), Leuven, Belgium
This paper appears in: Instrumentation and Measurement, IEEE Transactions on
Issue Date: June 2010
Volume: 59 Issue:6
On page(s): 1727 - 1733
ISSN: 0018-9456
Digital Object Identifier: 10.1109/TIM.2009.2024370
Date of Publication: 03 May 2010
Date of Current Version: 10 May 2010
Issue Date: June 2010
Volume: 59 Issue:6
On page(s): 1727 - 1733
ISSN: 0018-9456
Digital Object Identifier: 10.1109/TIM.2009.2024370
Date of Publication: 03 May 2010
Date of Current Version: 10 May 2010
Thermal shot noise in top-gated single carbon nanotube field effect transistors
Chaste, J.; Pallecchi, E.; Morfin, P.; Feve, G.; Kontos, T.; Berroir, J.-M.; Hakonen, P.; Placais, B.;
Laboratoire Pierre Aigrain, Ecole Normale Supérieure, CNRS (UMR 8551), Université P. et M. Curie, Université D. Diderot, 24, rue Lhomond, 75231 Paris Cedex 05, France
Laboratoire Pierre Aigrain, Ecole Normale Supérieure, CNRS (UMR 8551), Université P. et M. Curie, Université D. Diderot, 24, rue Lhomond, 75231 Paris Cedex 05, France
This paper appears in: Applied Physics Letters
Issue Date: May 2010
Volume: 96 Issue:19
On page(s): 192103 - 192103-3
ISSN: 0003-6951
Digital Object Identifier: 10.1063/1.3425889
Date of Current Version: 13 May 2010
Issue Date: May 2010
Volume: 96 Issue:19
On page(s): 192103 - 192103-3
ISSN: 0003-6951
Digital Object Identifier: 10.1063/1.3425889
Date of Current Version: 13 May 2010
The high-frequency transconductance and current noise of top-gated single carbon nanotube transistors have been measured and used to investigate hot electron effects in one-dimensional transistors. Results are in good agreement with a theory of one-dimensional nanotransistor. In particular the prediction of a large transconductance correction to the Johnson–Nyquist thermal noise formula is confirmed experimentally. Experiment shows that nanotube transistors can be used as fast charge detectors for quantum coherent electronics with a resolution of
13 μe/ |
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Dielectric constants of atomically thin silicon channels with double gate
Kageshima, Hiroyuki; Fujiwara, Akira;
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
This paper appears in: Applied Physics Letters
Issue Date: May 2010
Volume: 96 Issue:19
On page(s): 193102 - 193102-3
ISSN: 0003-6951
Digital Object Identifier: 10.1063/1.3427364
Date of Current Version: 13 May 2010
Issue Date: May 2010
Volume: 96 Issue:19
On page(s): 193102 - 193102-3
ISSN: 0003-6951
Digital Object Identifier: 10.1063/1.3427364
Date of Current Version: 13 May 2010
Dielectric constants of Si (111) nanofilms with the double gate are studied in the full inversion regime by using the first-principles calculation. The calculations show that the dielectric constants are significantly smaller than that of the bulk. Further, the dielectric constants depend on the conduction type as well as on the film thickness. They also oscillate with a 2-bilayer-thickness for the p-channel case as the film thickness decreases. The suppressed dielectric constants are found in the channel center as well as in the channel surface. These findings open the way to artificial control of the dielectric constant in semiconductor nanostructures.
Charge carrier densities in chemically doped organic semiconductors verified by two independent techniques
Lehnhardt, M.; Hamwi, S.; Hoping, M.; Reinker, J.; Riedl, T.; Kowalsky, W.;
Institute for High-Frequency Technology, Technical University of Braunschweig, Schleinitzstr. 22, D-38106 Braunschweig, Germany
Institute for High-Frequency Technology, Technical University of Braunschweig, Schleinitzstr. 22, D-38106 Braunschweig, Germany
This paper appears in: Applied Physics Letters
Issue Date: May 2010
Volume: 96 Issue:19
On page(s): 193301 - 193301-3
ISSN: 0003-6951
Digital Object Identifier: 10.1063/1.3427416
Date of Current Version: 13 May 2010
Issue Date: May 2010
Volume: 96 Issue:19
On page(s): 193301 - 193301-3
ISSN: 0003-6951
Digital Object Identifier: 10.1063/1.3427416
Date of Current Version: 13 May 2010
The charge carrier density of the
The effect of traps on the performance of graphene field-effect transistors
Zhu, J.; Jhaveri, R.; Woo, J. C. S.;
Department of Electrical Engineering, University of California–Los Angeles, Los Angeles, California 90095-1594, USA
Department of Electrical Engineering, University of California–Los Angeles, Los Angeles, California 90095-1594, USA
This paper appears in: Applied Physics Letters
Issue Date: May 2010
Volume: 96 Issue:19
On page(s): 193503 - 193503-3
ISSN: 0003-6951
Digital Object Identifier: 10.1063/1.3428785
Date of Current Version: 13 May 2010
Issue Date: May 2010
Volume: 96 Issue:19
On page(s): 193503 - 193503-3
ISSN: 0003-6951
Digital Object Identifier: 10.1063/1.3428785
Date of Current Version: 13 May 2010
This paper studies the performance degradation of graphene field-effect transistors due to the presence of traps. The mobile charge modulation by gate voltage is degraded because of immobile trapped charges. As a result the current is reduced and the on/off ratio is decreased. Extracted mobility using transconductance method is shown to be underestimated considerably due to the effect of traps.