- Model pre-evaluation (reference data, test circuits, etc)
- Physical model accuracy evaluation
- Model functionality in IC simulation
- Formal CMC balloting
Apr 17, 2009
Process for the Selection of the Next Generation Multigate Compact Models
The Compact Modeling Council (CMC) will start the process for the selection of a Multi-Gate MOSFET Compact Model with four-part standardization plan:
CMOS vs. Bipolar Operational Amplifiers: Which is best for my application?
CMOS, bipolar or even BiCMOS are common process technologies used for the development of operational amplifiers, and each of these process technologies offers their own advantages and disadvantages when it comes to op amp design. Which one’s the best in terms of:
- Power Consumption
- Voltage Offset
- Noise Performance
Apr 16, 2009
Process for the Selection of the Next Generation SOI MOSFET Compact Models
The Compact Modeling Council (CMC) is carrying out Process for the Selection of the Next Generation SOI MOSFET Compact Models.
The CMC is going to select SOI models for both partially-depleted (PD) and dynamic depletion (DD) applications. DD refers to SOI devices which exhibit PD behavior forsome bias regions, but are fully-depleted (FD) for others.
The selected model developers presented their models in the to the CMC Meeting in Boston, MA on 6/5/2008.
The selected developers were : PSP-SOI-PD (for PD SOI), HiSIM SOI (for PD/DD SOI), XSIM (for DD SOI), ULTRA-SOI (for DD SOI) and PSP-SOI-DD
OKIsemi is sponsoring HiSIM SOI, FSL is sponsoring PSP-SOI-DD and IBM is sponsoring PSP-SOI-PD.
Developers are currently carrying out the required tests.
MIGAS'09
The 12 session of the MIGAS Summer School (International Summer School on Advanced Microelectronics) will be dedicated to Nanoscale CMOS and Si-Based Beyond CMOS Nanodevices.
MIGAS 2009 will take place in Autrans (French Alps) from June 20 to 26 2009.
MIGAS is addressed to PhD students, engineers and researchers coming both from the university and from industry of the semiconductors.
The attendees will be able to improve their knowledge on nanoelectronic devices by means a set of lectures conducted by top international scientists.
The scienfific programme will consists of the following lectures:
MIGAS 2009 will take place in Autrans (French Alps) from June 20 to 26 2009.
MIGAS is addressed to PhD students, engineers and researchers coming both from the university and from industry of the semiconductors.
The attendees will be able to improve their knowledge on nanoelectronic devices by means a set of lectures conducted by top international scientists.
The scienfific programme will consists of the following lectures:
1) Introduction to SOI
- What is SOI ?, J.P. Colinge, Tyndall (confirmed)
- SOI zoo
- Technology modules
2) SOI Material
- Smart-Cut and beyond, L. Clavelier(confirmed)
- SOI zoo
3) SOI transistors device physics
- Mechanisms in PDSOI and FDSOI devices, O. Faynot, Leti (confirmed)
- Transport in double-gate and nanowire MOSFET, T. Hiramoto, University of Tokyo (confirmed)
- Quantum and tunneling SOI devices, A. Zaslavsky,USA (confirmed)
- Advanced simulation, F. Gamiz, UGR (confirmed)
4) Electrical characterization and reliability
- Advanced techniques for material and device characterization, S. Cristoloveanu,IMEP-LAHC (confirmed)
- Radiation effect and reliability, R. Schrimpf, USA (confirmed)
- How SOI can solve variability issues ?, A. Asenov, Glasgow University (confirmed)
5) Designing SOI circuits
- SOI circuit design plateform, P. Flatresse,STMicroelectronics (confirmed)
- Radiation effect and reliability, R. Schrimpf, USA (confirmed)
- How SOI can solve variability issues ?, A. Asenov, Glasgow University (confirmed)
Besides, MIGAS includes a great social programme, with activities such as excursions the day before the beginning of the school, wine tastings, and copious dinners based on the excellent Dauphinoise and Vercors cuisine, and with great wines. Of course, the area around Autrans offers excellent opportunities for hiking, mountaineering, mountain-biking, lake swimming and more.
Registration includes accomodation in the resort as well as all meals.
Second International Symposium on Organic Semiconductor Materials, Devices and Processing
The International Symposium on Organic Semiconductor Materials and Devices (Symposium
E9) will be held during the 216th ECS Meeting in Vienna, Austria. It will be the second
symposium in this series and the objective is to link processing and materials studies to devices
and technological applications. The symposium will cover a wide range of topics related to
broadly understood science and technology of organic/polymeric semiconductor materials,
processes, devices and applications. The list of topics of interests includes, but is not limited to,
the following:
• Chemistry of organic semiconductors and its impact on material and device characteristics;
organic and polymer semiconductors
• Physical phenomena underlying operation of organic/polymeric semiconductor devices
• Deposition methods: PVD, solution processing, printing and others
• Substrates: conductive and non-conductive, mechanically rigid and flexible
• Electronic devices: TFTs; ohmic contacts, dielectric-organic semiconductor material systems,
charge transport, modeling
• Photonic devices: light emitting diodes and solar cells
• Display and lighting applications
• Patterning of organic semiconductors to create desired device geometries
• Large area organic semiconductor electronics and photonics; roll-to-roll processing
• Reliability, stability, reproducibility of device characteristics
a one-page abstract must be
submitted electronically to ECS by 24 April 2009. A copy of the abstract must also be submitted
to the lead symposium organizer Prof. Jamal Deen, and be accompanied by a cover letter with full
contact details of the presenting author. This abstract should clearly indicate the purpose of the
work, the approach, the manner and the degree to which the work advances the field, and specific
results and their significance. All submitted abstracts will be peer-reviewed. Instructions for
preparing ECS meeting abstract and other relevant information are available on the ECS World
Wide Web Home Page at http://www.electrochem.org. Any additional information can be
obtained from the symposium organizers listed below.
M. Jamal Deen, McMaster University, Electrical and Computer Engineering Department (CRL 226), 1280
Main Street West Hamilton, ON L8S 4K1, Canada. Tel: (905) 525-9140 ext. 27137, Fax: (905) 523 4407,
E-mail: jamal@mcmaster.ca
David Gundlach, National Institute of Standards and Technology , Semiconductor Electronics Division
(Bldg. 225, Room A369, M.S. 8120), 100 Bureau Drive, Gaithersburg, MD 20899-8120 USA. Tel: (301)
975-2048; Fax: (301) 975-8069, Email:David.Gundlach@NIST.gov
Benjamin Iñiguez, Department of Electronic Engineering, Universitat Rovira i Virgili, Avda. Països Catalans, 26, 43007 Tarragona-Spain. Tel: +34 977 558 521, Fax: +34977559605, Email:
benjamin.iniguez@urv.cat
Hagen Klauk, Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, Germany.
Tel: +49 711 689-1401; Fax: +49 711 689-1472; E-mail: H.Klauk@fkf.mpg.de
E9) will be held during the 216th ECS Meeting in Vienna, Austria. It will be the second
symposium in this series and the objective is to link processing and materials studies to devices
and technological applications. The symposium will cover a wide range of topics related to
broadly understood science and technology of organic/polymeric semiconductor materials,
processes, devices and applications. The list of topics of interests includes, but is not limited to,
the following:
• Chemistry of organic semiconductors and its impact on material and device characteristics;
organic and polymer semiconductors
• Physical phenomena underlying operation of organic/polymeric semiconductor devices
• Deposition methods: PVD, solution processing, printing and others
• Substrates: conductive and non-conductive, mechanically rigid and flexible
• Electronic devices: TFTs; ohmic contacts, dielectric-organic semiconductor material systems,
charge transport, modeling
• Photonic devices: light emitting diodes and solar cells
• Display and lighting applications
• Patterning of organic semiconductors to create desired device geometries
• Large area organic semiconductor electronics and photonics; roll-to-roll processing
• Reliability, stability, reproducibility of device characteristics
a one-page abstract must be
submitted electronically to ECS by 24 April 2009. A copy of the abstract must also be submitted
to the lead symposium organizer Prof. Jamal Deen, and be accompanied by a cover letter with full
contact details of the presenting author. This abstract should clearly indicate the purpose of the
work, the approach, the manner and the degree to which the work advances the field, and specific
results and their significance. All submitted abstracts will be peer-reviewed. Instructions for
preparing ECS meeting abstract and other relevant information are available on the ECS World
Wide Web Home Page at http://www.electrochem.org. Any additional information can be
obtained from the symposium organizers listed below.
M. Jamal Deen, McMaster University, Electrical and Computer Engineering Department (CRL 226), 1280
Main Street West Hamilton, ON L8S 4K1, Canada. Tel: (905) 525-9140 ext. 27137, Fax: (905) 523 4407,
E-mail: jamal@mcmaster.ca
David Gundlach, National Institute of Standards and Technology , Semiconductor Electronics Division
(Bldg. 225, Room A369, M.S. 8120), 100 Bureau Drive, Gaithersburg, MD 20899-8120 USA. Tel: (301)
975-2048; Fax: (301) 975-8069, Email:David.Gundlach@NIST.gov
Benjamin Iñiguez, Department of Electronic Engineering, Universitat Rovira i Virgili, Avda. Països Catalans, 26, 43007 Tarragona-Spain. Tel: +34 977 558 521, Fax: +34977559605, Email:
benjamin.iniguez@urv.cat
Hagen Klauk, Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, Germany.
Tel: +49 711 689-1401; Fax: +49 711 689-1472; E-mail: H.Klauk@fkf.mpg.de
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