Dec 22, 2008

RE: Happy new year!

Hello!
let me also send my warm seasons greetings.
I hope, we would have a chance to meet us next year at one of my modeling events:
* Frankfurt/O: March/April 2009; http://www.mos-ak.org/frankfurt_o
* Lodz: June 2009; http://www.mixdes.org
* Athens: September 2009; http://www.mos-ak.org/athens
-- with regards - wladek;

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Happy new year!


We wish all of you a happy holiday season and all the best in 2009!

Dec 18, 2008

Memristor

Thanks to the IEEE, who has drawn my attention to this youtube video, where there is a 6-minutes long explanation about what in the **** a memristor is:



By the way,you can find more information in the December 2008 issue of the IEEE Spectrum.

Dec 5, 2008

MIXDES 2009

Let me draw your attention to the 16th International Conference Mixed
Design of Integrated Circuits and Systems MIXDES'2009 (www.mixdes.org )
which will be held in ?ódz', June 25-27, 2009. During this conference,
as usually, we will meet at a special session on compact modeling. A
general topic of the session will be "Device level support for emerging
CMOS technologies".

Nov 26, 2008

New papers (November 26, 2008)

A brief selection of papers:

Accurate Intrinsic Gate Capacitance Model for Carbon Nanotube-Array Based FETs Considering Screening Effect, (abstract) in Electron Device Letters, IEEE

Analytical Model of Subthreshold Current and Slope for Asymmetric 4-T and 3-T Double-Gate MOSFETs, (abstract) in Electron Devices, IEEE Transactions on

Three-Dimensional Closed-Form Model for Potential Barrier in Undoped FinFETs Resulting in Analytical Equations for VT and Subthreshold Slope, (abstract) in Electron Devices, IEEE Transactions on

A Non-Charge-Sheet Analytic Model for Symmetric Double-Gate MOSFETs With Smooth Transition Between Partially and Fully Depleted Operation Modes, (abstract) in Electron Devices, IEEE Transactions on

Carrier Mobility in Undoped Triple-Gate FinFET Structures and Limitations of Its Description in Terms of Top and Sidewall Channel Mobilities, (abstract) in Electron Devices, IEEE Transactions on

Enjoy your reading!