Accurate Intrinsic Gate Capacitance Model for Carbon Nanotube-Array Based FETs Considering Screening Effect, (abstract) in Electron Device Letters, IEEE
Analytical Model of Subthreshold Current and Slope for Asymmetric 4-T and 3-T Double-Gate MOSFETs, (abstract) in Electron Devices, IEEE Transactions on
Three-Dimensional Closed-Form Model for Potential Barrier in Undoped FinFETs Resulting in Analytical Equations for
A Non-Charge-Sheet Analytic Model for Symmetric Double-Gate MOSFETs With Smooth Transition Between Partially and Fully Depleted Operation Modes, (abstract) in Electron Devices, IEEE Transactions on
Carrier Mobility in Undoped Triple-Gate FinFET Structures and Limitations of Its Description in Terms of Top and Sidewall Channel Mobilities, (abstract) in Electron Devices, IEEE Transactions on
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1 comment:
Hi, why don't you give some comments on these works?
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