Postdoc position on compact device modeling in Spain

As Professor in the Universitat Rovira i Virgili (Tarragona, Spain), I am going to apply for a postdoctoral position (funded by the Spanish Ministry under the Programa Juan de la Cierva) related to the European projects we participate in: the NANOSIL Network of Excellence (a project about technology, characterization and modeling of Si nanodevices) and the Compact Modeling Network (of which I am the coordinator).

The candidate should be a person who holds a PhD as awarded within the three years prior to the date when the period for presentation of application forms closes. If the candidate does not hold a PhD yet, the deadline to be awarded a PhD is the date of publication of the Awarding Resolution in the Ministry of Education and Science web site.

The candidate should have enough research experience in the field of semiconductor devices, and must have a very good knowledge of the physics of electron devices. The research project to be carried out can be adapted to the candidate's profile. In any case, it will be related to the European projects in which we participate. Our contribution in these projects is the physics and modeling (in particular compact modeling) of the novel devices addressed by these European projects. In the case of NANOSIL Network of Excellence, the targeted devices are mostly: Schottky Barrier SOI MOSFETs, strained Si SOI MOSFETs, and Si Nanowires. In the case of the Compact Modeling Network the devices addressed are : multi-gate MOSFETs (FinFETs, DG MOSFETs,...), High Voltage MOSFETs and advanced HEMTs.

The postdoc position, which will be a contract, will have a duration of up to 3 years. The net salary will be around 1900 Euro/months. Researchers from many European countries will have tax exemption during the first two years, so they will be able to have much higher net salaries.

Interested applicants should send me their CV by e-mail.
DEADLINE TO RECEIVE APPLICATIONS: March 11 2008

MY E-MAIL ADDRESS IS: benjamin.iniguez@urv.cat

Address:
Benjamin Iñiguez
Nanoelectronics and Photonics Systrems Group (NEPHOS)
Department of Electronic Engineering
Universitat Rovira i Virgili (URV)
Avinguda dels Paisos Catalans 26
43007 Tarragona
SPAIN.

About Tarragona:

Tarragona is located on the Mediterranean, in the heart of the Costa Daurada, in the south of Catalonia, about 100 Km south from Barcelona. Tarragona is well connected to Barcelona by highway, and frequent trains and buses. It has also a direct bus connection with Barcelona Airport. Besides, it has high-speed rail connection with Madrid and Barcelona.

Tarraco (the Roman name for Tarragona) was one of the most important cities in the Roman Empire. F On 30 November 2000, the UNESCO committee officially declared the Roman archaeological complex of Tàrraco a World Heritage Site. This recognition is intended to help ensure the conservation of the monuments, as well as to introduce them to the broader international public. Among the citizens of Tarragona, it has moreover fomented knowledge of, pride in and respect for the city.

Speaking about Tarraco’s climate, the famous Roman poet Virgil wrote: “The climate blends and confuses the seasons singularly, so that all the year seems an eternal spring.” Thanks to its temperate climate, with an average yearly temperature of 23ºC, its clean beaches with fine and gloden sand, and its singular artistic and architectural heritage, Tarragona is one of the most important tourism hubs in Europe. The city has a population of 120,202 inhabitants, and the native tongue is Catalan, but everybody speaks also Spanish, which is also official in Catalonia. Many people can also speak English (especially the young people) or French.

Pre-doc position available

I've got an offer for a pre-doc position within the Electronic Technology Group of the Balearic Islands University. The amount of the bourse are around 1000 euros per month, for four years. After this time, the candidate should be able to read the PhD thesis, and obtain this degree.

Those interested, please contact Eugenio Garcia: eugeni.garcia(_at_)uib.es (substitute _at_ by @)

New IC-CAP package

A new addition from Agilent to their unofficially official parameter extraction program. As they say:
"Creating device-simulation models for advanced process technologies is problematic because physical wafers that meet specifications with acceptable yield often are not produced for months to years," said Roberto Tinti, product marketing manager with Agilent's EEsof EDA division. "Our Target Modeling Package addresses this by providing an easy way to extract CMOS device models from a reduced set of Process Control Monitor data before wafers from a new process are produced. Our customers tell us that extracting simulation models before a process matures can save them several months in a typical design cycle."

You can have a look to the full press release here.

Play a game

Applied Materials has launched a small game about how to made a 65nm transistor... It's quite interesting, and let's you know quite a lot about the fabrication process.... Have a look here, and see if you can get 100/100 score!

MIEL'08

The 26th International Conference on Microelectronics (MIEL 2008) will be held in Nis (Serbia) on May 11-14 2008.

MIEL is one of the most prestigeous Microelectronics conferences in Europe. Topics ofthe conference include all subjects related to electronic devices and electronic circuits.

This year a number of top researchers in electron devices will give invited presentations.

Prof Jamal Deen will present an invited contribution entitled "Towards Low-cost, High-Sensitivity, Integrated Biosensors".

Prof. Mark Lundstrom will give a very interesting invited talk, entitled: "Electronics from the Bottom Up: An Approach to 21st Century Electronic Devices"

And one invited presentation about compact modeling: Dr Slobodan Mijalkovic, another invited speaker, will make a presentation on compact modeling of organic transistors: "Modelling of Organic Field-Effect Transistors for Technology and Circuit Design"

Prof E.Sangiorgi will talk about "Silicon Based Nano-MOSFET: New Materials, New Device Architectures, and New Challenges for Device Simulation".

Prof.Mikael Östling will present new results about Schottky-Barrier MOSFETs: "Towards a Nano-MOSFET with Schottky Barrier Drain/Source"

And there is a very challenging invited presentation from Prof Radivoje Popovic: "Counting Single Electrons in CMOS Circuit"

There are many other invited presentations!

By the way, the social programme of MIEL is superb! Every evening there is a copious dinner, based on traditional and delicious Serbian cuisine. Besides, there is lot of slivovitz, fun and dancing in the gala dinner!