Termo, Gennaro, Giulio Borghello, Federico Faccio, Kostas Kloukinas, Michele Caselle, Alexander Friedrich Elsenhans, Ahmet Cagri Ulusoy, Adil Koukab, and Jean-Michel Sallese
Characteristics and ultra-high total ionizing dose response
of 22 nm fully depleted silicon-on-insulator
Journal of Instrumentation 19, no. 03 (2024): C03039
DOI 10.1088/1748-0221/19/03/C03039
a CERN, Geneva, Switzerland
b École Polytechnique Fédérale de Lausanne, Switzerland
c Karlsruhe Institute of Technology, Germany
Abstract: The radiation response of MOS transistors in a 22 nm Fully Depleted Silicon-On-Insulator (FDSOI) technology exposed to ultra-high total ionizing dose (TID) was investigated. Custom structures including n- and p-channel devices with different sizes and threshold voltage flavours were irradiated with X-rays up to a TID of 100 Mrad(SiO2) with different back-gate bias configurations, from −8 V to 2 V. The investigation revealed that the performance is significantly affected by TID, with the radiation response being dominated by the charge trapped in the buried oxide.
Fig: Schematic of the irradiated transistors in 22 nm FDSOI
Complementary paper:
[1] Termo, Gennaro, Giulio Borghello, Federico Faccio, Stefano Michelis, A. Koukab, and J-M. Sallese. "Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID." Journal of Instrumentation 18, no. 01 (2023): C01061.
