Sourabh Khandelwal
Advanced SPICE Model for GaN HEMTs (ASM-HEMT)
A New Industry-Standard Compact Model
for GaN-based Power and RF Circuit Design
DOI: 10.1007/978-3-030-77730-2
eBook ISBN: 978-3-030-77730-2
Describes in detail a new industry standard for GaN-based power and RF circuit design. Includes discussion of practical problems and their solutions in GaN device modeling. Covers both radio-frequency (RF) and power electronics application of GaN technology and describes SPICE modeling of both GaN RF and power devices.
Table of contents:
- Front Matter; pp. i-xv
- Gallium Nitride Semiconductor Devices; pp. 1-8
- Compact Modeling; pp. 9-19
- Introduction to ASM-HEMT Compact Model; pp. 21-31
- Core Formulations in ASM-HEMT Model; pp. 33-45
- Non-ideal Effects in Device Current and Their Modeling; pp. 47-62
- Trapping Models; pp. 63-81
- Non-Ideal Effects in GaN Capacitances and Their Modeling; pp. 83-100
- Gate Current Model; pp. 101-113
- Effect of Ambient Temperature on GaN Device; pp. 115-124
- Noise Models; pp. 125-130
- Parameter Extraction in ASM-HEMT Model; pp. 131-150
- Advance Simulations with ASM-HEMT Model; pp. 153-174
- Resources for ASM-HEMT Model Users; pp. 175-175
- Back Matter; pp. 175-188
About the author:
Sourabh Khandelwal is Senior Lecturer at the School of Engineering at Macquarie University, Sydney. He is the lead developer of ASM--HEMT compact model, which is a new industry standard compact model for GaN RF and power devices. Earlier to this role, Manager of Berkeley Device Modeling Center and Postdoctoral Researcher at the BSIM group at University of California, Berkeley. Before that, he worked as Research Engineer at IBM Semiconductor Research. He has over 200 publications in top-tier conferences and journals in the area of semiconductor device modeling and circuit design.
