Anirban Kar∗, Ahtisham Pampori∗, Noriyoshi Hashimoto† and Yogesh Singh Chauhan∗
A Charge-Based Silicon Carbide MOSFET Compact Model for Power Electronics Applications
2021 IEEE 8th Uttar Pradesh Section UPCON)
DOI: 10.1109/UPCON52273.2021.9667643
∗Department of Electrical Engineering, IIT Kanpur (IN)
†Keysight Technologies (J)
Abstract: This paper presents a charge-based compact model for Silicon Carbide (SiC) power MOSFETs, which captures the static characteristics of the device over a wide range of voltages and currents. The drift region resistance and charges in the channel have been formulated to calculate the drain current in a self-consistent manner. The proposed model has been validated against the measured transfer and output characteristics of a commercial 1.2kV power MOSFET (Infineon IMW120R045M1) with a maximum current rating of 52A.
Fig: a) Transfer characteristics of SiC MOSFET with Vd=1 to 20V
b) Transconductance of SiC MOSFET with Vd=1 to 20V
Acknowledgement: This work was supported in part by the Swarna Jayanti Fellowship under Grant DST/SJF/ETA02/2017-18 and in part by the Department of Science and Technology through the FIST Scheme under Grant SR/FST/ETII-072/2016 and Keysight Technologies, USA. The measurement of the device was carried out at Keysight Technologies, Japan.
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