Stephan Adolf and Wolfgang Nebel
Abstraction NBTI model
it - Information Technology, Sep. 2021
DOI: 10.1515/itit-2021-0005
Abstract: Negative Bias Temperature Instability (NBTI) is one of the major transistor aging effects, possibly leading to timing failures during run-time of a system. Thus, one is interested in predicting this effect during design time. In this work, an Abstraction NBTI model is introduced reducing the state space of trap-based NBTI models using two abstraction parameters, applying a state transformation to incorporate variable stress conditions. This transformation is faster than traditional approaches. Currently, the conversion into estimated threshold voltage damages is a very time-consuming process.
Fig: Trap in the gate oxide of a PMOS transistor
Acknowledgement: The author thanks Kim Grüttner for proofreading the manuscript of the paper. This research is funded by the German Research Foundation through the Research Training Group “SCARE: System Correctness under Adverse Conditions” (DFG-GRK 1765/2), https://www.uni-oldenburg.de/en/scare/. The simulations were partly performed on the HPC Cluster CARL at the University of Oldenburg (Germany), funded by the DFG through its Major Research Instrumentation Program (INST 184/157-1 FUGG) and the Ministry of
Science and Culture (MWK) of the Lower Saxony State.
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