May 31, 2020

[paper] ReRAM: History, Status, and Future

ReRAM: History, Status, and Future
Y. Chen, Member, IEEE
Western Digital Corporation, Milpitas, CA
in IEEE TED, vol. 67, no. 4, pp. 1420-1433, April 2020
doi: 10.1109/TED.2019.2961505.


Abstract: This article reviews the resistive random-access memory (ReRAM) technology initialization back in the 1960s and its heavily focused research and development from the early 2000s. This review goes through various oxygen/oxygen vacancy and metal-ion-based ReRAM devices and their operation mechanisms. This review also benchmarks the performance of various oxygen/oxygen vacancy and metal-ion-based ReRAM devices with general trend drawn. Being a semiconductor memory and storage technology, the commercialization attempts for both stand-alone mass storage/storage-class memory and embedded nonvolatile memory are also reviewed. Looking toward the coming era, the potential of using ReRAM technology to improve machine learning efficiency is discussed. 
Fig: General category of resistive switching memory technologies
with ReRAM highlighted as the review focus

Acknowledgment: Sincere acknowledgment to people who ever contribute to ReRAM technology development and understanding.

URL: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8961211&isnumber=9046113

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