TCAD Mobility #Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections https://t.co/xAcLMzh4S9
— Wladek Grabinski (@wladek60) November 25, 2017
from Twitter https://twitter.com/wladek60
November 25, 2017 at 06:04PM
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Nov 25, 2017
TCAD Mobility #Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections https://t.co/xAcLMzh4S9
from Twitter https://twitter.com/wladek60
November 25, 2017 at 06:04PM
via IFTTT
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