Wednesday, 19 February 2014

postdoc position in Spain related to semiconductor device modeling

As Professor in the Universitat Rovira i Virgili (Tarragona, Catalonia, , Spain), I am going to apply for a postdoctoral position (funded by the Spanish Ministry) related to modeling (in particular compact modeling) and/or parameter extraction of emerging devices we are targeting, such as Multi-Gate MOSFETs, junctionless nanowires, III-V MOSFETs, GaN HEMTs, Tunnel FETs, and also organic and metal oxide TFTs.

The candidate should be a person who holds a PhD as awarded after September 1 2009, or who is committed to defend his Ph D thesis in the coming months (before the start of the contract).

Contracts are expected to start after September 2014.
The candidate should have enough research experience in the field of semiconductor devices, and must have a very good knowledge of the physics of electron devices. The research project to be carried out can be adapted to the candidate's profile.

The work may continue the work we did in the framework of some EU-funded projects, such as COMON (about Multi-Gate MOSFETs, GaN HEMTs, and High Voltage MOSFETs), SQWIRE (junctionless Si nanowires) and FlexNET (organic TFTs) . Our contribution in these projects was the physics and modeling (in particular compact modeling) of the novel devices addressed by these European projects.

The postdoc position, which will be a contract, will have a duration of up to 2 years. The net salary will be around 1900 Euro/months.

Interested applicants should send me their CV by e-mail.
DEADLINE TO RECEIVE APPLICATIONS: February 24 2014

MY E-MAIL ADDRESS IS: benjamin.iniguez@urv.cat

Address:
Benjamin IƱiguez
Nanoelectronics and Photonics Systrems Group (NEPHOS)
Department of Electronic Engineering
Universitat Rovira i Virgili (URV)
Avinguda dels Paisos Catalans 26
43007 Tarragona, Catalonia
SPAIN.

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