The RF & Nano Device group at TU Ilmenau is seeking a candidate for a position in the frame of a European Marie Curie Project.
The candidate will work on compact modeling of high-frequency transistors, in particular HEMTs (High Electron Mobility Transistor). During several months he or she will also work at a semiconductor foundry in the UK in the frame of a secondment agreement between the foundry and TU Ilmenau.
Contract details: Temporary contract to carry out a Ph D, starting date January 2010.
Application deadline: 31 October 2009.
Contact: PD Dr. Frank Schwierz, email: email@example.com
Requirements: Candidates should be a Ph.D. student having already earned a Master or Dipl.-Ing. degree in electrical engineering, preferably in semiconductor electronics. Good skills in written and spoken English are mandatory.
Desirable is experience in the areas of semiconductor device physics and device modeling and simulation.