Compact MOSFET Mechanical Stress Model

Bonev, Nikolay, Dirk Michael Nuernbergk, and Christian Lang

Inclusion of Mechanical Stress Effects in a Compact MOSFET Model

Science and Technology 28, no. 2 (2025): 138-149.

DOI: 10.59277/ROMJIST.2025.2.02

<https://romjist.ro/full-texts/paper797.pdf>

1 Melexis Bulgaria EOOD, Sofia, Bulgaria
2 Melexis GmbH Erfurt, Erfurt, Germany

Abstract: The analog performance of integrated circuits relies on stable parameters of its transistors. Mechanical stress changes the electronic properties of silicon and, therefore, also the device parameters. For circuit design, a good model of these effects is needed for a predictable and reliable function of the circuits. This article extracts the changes of various MOSFET parameters under effect of mechanical stress. A compact description of the stress effects is derived by applying tensors of piezo coefficients. The deviations are included in the physically based compact EKV model. A comparison with measured data shows that the stress effects are modelled correctly within a 10 % error margin.

Fig: Extraction setup for the specific current Is