[paper] Nanosheet FETs

Girija Nandan Ka

Nanosheet FETs

figshare: Silicon on Insulator and Advanced MOSFET based Structures, 

17-Jan-2021 DOI: 10.6084/m9.figshare.13600961.v1.

Abstract: The modern microprocessor is one of the world’s most advanced systems, but at the core of this device it is, what we believe, is a transistor. At present there are billions and billions of microprocessor, and they are all somewhat identical. So improving the performance and boosting the density of these transistors is the most straightforward way to make microprocessors, and the computers they power, work better.

Fig.1 Electrochemical lithiation process for the fabrication of 2D nanosheets 

from the layered bulk material.

Fig.1 Electrochemical lithiation process for thefabrication of 2D nanosheets from the layered bulkmaterial.

[paper] Polymer/TiO2 Nanorod Nanocomposite Optical Memristor Device

A. H. Jaafar, M. M. Al Chawa, F. Cheng, S.M. Kelly, R. Picos, R. Tetzlaff, and N. T. Kemp

Polymer/TiO2 Nanorod Nanocomposite Optical Memristor Device

J. Phys. Chem. C 2021, XXXX, XXX, XXX-XXX

Publication Date: June 30, 2021

DOI: 10.1021/acs.jpcc.1c02799

Abstract: Modulation of resistive switching memory by light opens the route to new optoelectronic devices that can be controlled both optically and electronically. Applications include integrated circuits with memory elements switchable by light and neuromorphic computing with optically reconfigurable and tunable synaptic circuits. We report on a unique nanocomposite resistive switching material and device made from a low concentration (∼0.1% by mass) of titanium dioxide nanorods (TiO2-NRs) embedded within the azobenzene polymer, poly(disperse red 1 acrylate, PDR1A). The device exhibits both reversible electronic memristor switching and reversible polarization-dependent optical switching. Optical irradiation by circularly polarized light causes a trans–cis photochemical isomerization that modifies the conformation and orientation of the photoactive azo-unit within the polymer. The resulting expansion of the composite (PDR1A/TiO2-NR) polymer film modifies the conduction pathway, facilitated by the presence of the TiO2-NRs, as a semiconductor material, through the (PDR1A/TiO2-NR) polymer film, which provides a sensitive means to control resistive switching in the device. The effect is reversible by changing the polarization state of the incident light. A charge-flux memristor model successfully reproduces the current–voltage hysteresis loops and threshold switching properties of the device, as well as the effect of the illumination on the electrical characteristics.

Fig: Polymer/TiO2 Nanorod Nanocomposite Optical Memristor Device

[mos-ak] [Final Program] 5th Sino MOS-AK Workshop Xi'an (hybrid/online) August 11-13, 2021

Together with local Xidian University Host and MOS-AK Organizers as well as all the Extended MOS-AK TPC Committee, we have the pleasure to invite to the 5th Sino MOS-AK Workshop Xian workshop which will be Virtual/Online event. Scheduled, MOS-AK/Xian workshop, aims to strengthen a network and discussion forum among experts in the field, enhance open platform for information exchange related to compact/SPICE modeling and Verilog-A standardization, bring people in the compact modeling field together, as well as obtain feedback from technology developers, circuit designers, and TCAD/EDA tool developers and vendors.

The MOS-AK Workshop Program is available online: 

https://www.mos-ak.org/xian_2021/

Venue: Hybrid event at Xidian University <xidian.edu.cn>

会议场所：西安电子科技大学北校区阶梯教学楼112报告厅, 

西安市雁塔区太白南路2号西安电子科技大学（北校区）

No.2, South Taibai Road, Xian Dianzi University, Xi'an, 710071

Online Registration is open

Workshop Secretary: Meng Zhang Mobile:13619295980

any related enquiries can be sent to registration@mos-ak.org

Post-workshop publications, selected, the best papers will be selected and recommended for further publication in the renowned journal such as Weily's International Journal of Microwave and Optical Technology Letters special issue.

-- Min Zhang; XMOD Technologies (CN) 

-- W.Grabinski; MOS-AK (EU)

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Enabling Compact Modeling R&D Exchange

www.mos-ak.org

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WG050721

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[papers] Compact/SPICE Modeling

[1] M. S. Tarkov; Two-Gate FeFET SPICE Model and Its Application to Construction of Adaptive Adder; 2021 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology (USBEREIT), 2021, pp. 0206-0209,
DOI: 10.1109/USBEREIT51232.2021.9455091.

[2] L. Liu, Y. Tian and W. Huang, "A Bio-IA with Fast Recovery and Constant Bandwidth for Wearable Bio-Sensors," in IEEE Sensors Journal,
DOI: 10.1109/JSEN.2021.3092001.

[3] C. -T. Tung, H. -Y. Lin, S. -W. Chang and C. -H. Wu, "Analytical modeling of tunnel-junction transistor lasers," in IEEE Journal of Selected Topics in Quantum Electronics,
DOI: 10.1109/JSTQE.2021.3090527.

[4] Subir Kumar Maity, Soumya Pandit; A SPICE compatible physics-based intrinsic charge and capacitance model of InAs-OI-Si MOS transistor, Superlattices and Microstructures, Volume 156, 2021, 106975, ISSN 0749-6036,
DOI: 10.1016/j.spmi.2021.106975

Fig:  Strucutre of InAs-OI-Si MOS transistor

[paper] 20 Years of Reconfigurable Field-Effect Transistors

T. Mikolajick^1,2, G. Galderisi¹, M. Simon¹, S. Rai³, A. Heinzig², A. Kumar³, 

W.M. Weber⁴, J. Trommer¹

20 Years of Reconfigurable Field-Effect Transistors: From Concepts to Future Applications 

22th Conference on Insulating Films on Semiconductors 

INFOS2021

28 June-2 July 2021, Rende, Italy

1 NaMLab GmbH, Nöthnitzer Str. 64a, Dresden, Germany
2 Chair of Nanoelectronics, TU Dresden, Germany
3 Chair of Processor Design, TU Dresden, Dresden, Germany
4 Chair of Nanoelectronics, TU Wien, Vienna, Austria

Outline

• Introduction
• The Reconfigurable Field Effect Transistor
• Early Phase
• Device Outgrowth
• Functional Diversification
• Summary and Outlook