[paper] IGBT Compact Modeling

Compact Modeling of IGBT Charging/Discharging for Accurate Switching Prediction

Y. Miyaoku¹, A. Tone¹, K. Matsuura¹, M. Miura-Mattausch¹ (Fellow, IEEE),

H. J. Mattausch¹ (Senior Member, IEEE), and D. Ikoma²

IEEE J-EDS, vol. 8, pp. 1373-1380, 2020

doi: 10.1109/JEDS.2020.3008919

1 Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima 739-8527, Japan
2 Sensor and Semiconductor Development, Denso Corporation, Aichi 448-8661, Japan

ABSTRACT The trench-type IGBT is one of the major devices developed for very high-voltage applications, and has been widely used for the motor control of EVs as well as for power-supply systems. In the reported investigation, the accurate prediction of the power dissipation of IGBT circuits has been analyzed. The main focus is given on the carrier dynamics within the IGBTs during the switching-off phase. It is demonstrated that discharging and charging at the IGBT’s gate-bottom-overlap region, where electron discharging is followed by hole charging, has an important influence on the switching performance. In particular, the comparison of long-base and short-base IGBTs reveals, that a quicker formation of the neutral region within the resistive base region, as occurring in the long-base IGBT, leads to lower gatebottom-overlap capacitance, thus realizing faster electron discharging and hole charging of this overlap region.

FIG: IGBT structures with nMOSFET + pnp BJT part (a. and b.) and nMOSFET-only structure (c.). The X–Y line is through the middle of the bottom-gate oxide and the A–B line is directly underneath the bottom-gate oxide.

Received 14 May 2020; revised 2 July 2020; accepted 8 July 2020. Date of publication 13 July 2020; date of current version 8 December 2020. The review of this article was arranged by Editor M. Mierzwinski. Digital Object Identifier 10.1109/JEDS.2020.3008919

[paper] Coplanar OTFT

Blurred Electrode for Low Contact Resistance in Coplanar Organic Transistors

Xiaolin Ye, Xiaoli Zhao, Shuya Wang, Zhan Wei, Guangshuang Lv, Yahan Yang, Yanhong Tong, Qingxin Tang, and Yichun Liu

American Chemical Society; Nano; Dec.18, 2020

DOI: 10.1021/acsnano.0c08122

*Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China

Abstract: Inefficient charge injection and transport across the electrode/semiconductor contact edge severely limits the device performance of coplanar organic thin-film transistors (OTFTs). To date, various approaches have been implemented to address the adverse contact problems of coplanar OTFTs. However, these approaches mainly focused on reducing the injection resistance and failed to effectively lower the access resistance. Here, we demonstrate a facile strategy by utilizing the blurring effect during the deposition of metal electrodes, to significantly reduce the access resistance. We find that the transition region formed by the blurring behavior can continuously tune the molecular packing and thin-film growth of organic semiconductors across the contact edge, as well as provide continuously distributed gap states for carrier tunnelling. Based on this versatile strategy, the fabricated dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) coplanar OTFT shows a high field-effect mobility of 6.08 cm2 V–1 s–1 and a low contact resistance of 2.32 kΩ cm, comparable to the staggered OTFTs fabricated simultaneously. Our work addresses the crucial impediments for further reducing the contact resistance in coplanar OTFTs, which represents a significant step of contact injection engineering in organic devices.

Fig: Coplanar Organic Transistors (oTFTs)

[Highlights] 2020 IEEE IEDM

The IEEE International Electron Devices Meeting (IEDM), which this year was organized online (December 12-18, 2020), is a key forum for reporting developments in semiconductor and electronic device technology. 

Nature Electronics Research Highlights

Gate-all-around transistors stack up by Stuart Thomas; Nature Electronics	Gallium nitride gets wrapped up by Stuart Thomas; Nature Electronics
Vacuum transistors with high-power operation Matthew Parker; Nature Electronics	Beam scanning on a single chip Matthew Parker; Nature Electronics
FinFETs for cryptography Christiana Varnava; Nature Electronics	Electronics in an organic package Christiana Varnava; Nature Electronics

[mos-ak] [online publications] Virtual International MOS-AK Workshop, Silicon Valley, Dec. 10-11, 2020

Local organization THM Team together with the International MOS-AK Board of R&D Advisers as well as all the Extended MOS-AK TPC Committee have organized two days virtual/online event:

• 13th International MOS-AK Workshop,  Silicon Valley, Dec. 10-11, 2020
• virtual session 11:00 - 14:00 (PST) on Dec.10, 2020
• virtual session 11:00 - 14:00 (PST) on Dec.11, 2020

Online Publications:

There are MOS-AK technical presentations covering selected aspects of the compact/SPICE modeling and its Verilog-A standardization (see all the slide presentations online at corresponding link).

Postworkshop Publications:

Selected, best MOS-AK technical presentation will be recommended for further publication in a special Solid State Electronics issue on compact modeling planned for the next 2021 year.

The MOS-AK Association plans to continue its standardization efforts by organizing future compact modeling meetings, workshops and courses around the globe thru the next 2021 year, including:

• 1st MOS-AK Asia/South Pacific, (online) end Feb.2021
  
• 3rd MOS-AK/India Conference, Hyderabad (IN) Rescheduled 2021
• MOS-AK at LAEDC (MX), April 18-20 2021
• FOSS TCAD/EDA at 5NANO2021, Kottayam (IN) April, 2021
• 5th Sino MOS-AK Xi'an (CN),  Rescheduled 2021
• WCM at the Nanotech, Washington DC (US), Rescheduled 2021
• IRPhE, mmW and THz Conf. Aghveran (AM) Rescheduled 2021
• 19th MOS-AK at ESSDERC/ESSCIRC, Grenoble (F) Sept. 2021
• 14th US MOS-AK Workshop, Silicon Valley (US) Dec. 2021
  in timeframe of IEDM and Q4 CMC Meetings

W.Grabinski on the behalf of International MOS-AK Committee 

WG221220

[paper] Radiation testing of a 6-axis MEMS inertial navigation unit

Radiation testing of a commercial 6-axis MEMS inertial navigation unit at ENEA Frascati proton linear accelerator

G. Bazzano^a,b, A. Ampollini^a, F. Cardelli^a, F. Fortini^a, P. Nenzi^a, G.B. Palmerini^b, L. Picardi^a, 

L. Piersanti^a, C. Ronsivalle^a, V. Surrenti^a, E. Trinca^a, M. Vadrucci^a, M. Sabatini^c

Advances in Space Research (2020)

DOI: 10.1016/j.asr.2020.11.031

^aENEA, Via Enrico Fermi 45, Frascati, Italy

^bScuola di Ingegneria Aerospaziale, La Sapienza Università di Roma, Italy

^cDipartimento di Ingegneria Astronautica, Elettrica ed Energetica, La Sapienza Università di Roma, Italy 

Abstract: We present the first results of a novel collaboration activity between ENEA Frascati Particle Accelerator Laboratory and University La Sapienza Guidance and Navigation Laboratory in the field of Radiation Hardness Assurance (RHA) for space applications. The aim of this research is twofold: (a) demonstrating the possibility to use the TOP-IMPLART proton accelerator for radiation hardness assurance testing, developing ad hoc dosimetric and operational procedures for RHA irradiations; (b) investigating system level radiation testing strategies for Commercial Off The Shelf (COTS) components of interest for SmallSats space missions, with focus on devices and sensors of interest for guidance, navigation and control, through simultaneous exploration of Total Ionizing Dose (TID), Displacement Damage (DD) dose and Single-Event Effects (SEE) with proton beams. A commercial 6-axis integrated Micro Electro-Mechanical Systems (MEMS) inertial navigation system (accelerometer, gyroscope) was selected as first Device Under Test (DUT). The results of experimental tests aimed to define an operational procedure and the characterization of radiation effects on the component are reported, highlighting the consequence of the device performance degradation in terms of the overall navigation system accuracy. Doses up to 50 krad(Si) were probed and cross sections for Single-Event Functional Interrupt (SEFI) evaluated at a proton energy of 30 MeV. 

Fig: Polyedric support for MEMS accelerometer characterization