Sedemos News

Jan 21, 2011

Papers in SSE (vol 56, issue 1, february 2011)

Temperature model for Ge₂Sb₂Te₅ phase change memory in electrical memory device Original Research Article

Pages 13-17
Daolin Cai, Zhitang Song, Houpeng Chen, Xiaogang Chen

Research highlights

► Temperature model is constituted by an active region and a dispersed-heat region. ► Calculated and simulated the radius and crystalline fraction. ► Crystalline fraction and temperature increase with the reset voltage increasing.

Microwave noise modeling of FinFETs Original Research Article

Pages 18-22
Giovanni Crupi, Alina Caddemi, Dominique M.M.-P. Schreurs, Wojciech Wiatr, Abdelkarim Mercha

Comprehensive numerical simulation of threshold-voltage transients in nitride memories Original Research Article

Pages 23-30
Aurelio Mauri, Salvatore M. Amoroso, Christian Monzio Compagnoni, Alessandro Maconi, Alessandro S. Spinelli

Research highlights

► We present a complete model to describe charge trap devices behavior. ► In this study any mathematical aspect regarding holes and electrons is detailed modeled. ► Experimental data coming from different TANOS and SONOS devices are correctly reproduced.

A unified short-channel compact model for cylindrical surrounding-gate MOSFET Original Research Article

Pages 40-46
Bastien Cousin, Marina Reyboz, Olivier Rozeau, Marie-Anne Jaud, Thomas Ernst, Jalal Jomaah

Research highlights

► A compact model of short-channel effects for GAA MOSFET has been developed. ► The model uses a well-known extraction method making the model simple and accurate. ► Each term is used in a model core in order to provide a short-channel correction. ► The compact model is well described and is suitable with circuit design tools. ► The model is validated using TCAD simulations for all gate lengths down to 10nm.

Physical limitations of the diffusive approximation in semiconductor device modeling Original Research Article

Pages 60-67
Tigran T. Mnatsakanov, Alexey G. Tandoev, Michael E. Levinshtein, Sergey N. Yurkov

Research highlights

► New criteria for occurrence of the diffusion mode were formulated. ► The applicability limits of the diffusion approximation in simulation were found. ► The analytical results are confirmed by a numerical experiment.

Direct determination of threshold condition in DG-MOSFETs from the g_m/I_D curve   Original Research Article

Pages 89-94
Ana Isabela Araújo Cunha, Marcelo Antonio Pavanello, Renan Doria Trevisoli, Carlos Galup-Montoro, Marcio Cherem Schneider

Dynamic model of AlGaN/GaN HFET for high voltage switching   Original Research Article

Pages 135-140
Alexei Koudymov

A surface potential based drain current model for asymmetric double gate MOSFETs   Original Research Article

Pages 148-154
Pradipta Dutta, Binit Syamal, N. Mohankumar, C.K. Sarkar

Research highlights

► We model a surface potential based drain current for asymmetric DG MOSFETs. ► The model is applicable for both heavily and lightly doped Silicon channel. ► The surface potential at both the gates are solved using proper Iterative techniques. ► The effect of volume inversion is shown in case of lightly doped channel.

AlGaN/GaN hybrid MOS-HEMT analytical mobility model Original Research Article

Pages 201-206
A. Pérez-Tomás, A. Fontserè

Research highlights

► The hybrid normally-off switch AlGaN/GaN MOS-HEMT combines two main advantages: ► The MOS gate control and the high 2DEG mobility in AlGaN/GaN drift region. ► Here, we present simple analytical modeling of the on-resistance of a hybrid MOS-HEMT. ► We investigate the layout, the MOS channel mobility, the effect of a high-k and the temperature. ► The model can aid to understand the device physics and is compatible with TCAD simulation packages.

Mobility degradation and transistor asymmetry impact on field effect transistor access resistances extraction

Pages 214-218
J.C. Tinoco, A.G. Martinez-Lopez, J.-P. Raskin

Jan 20, 2011

[uSG] New Website

Microelectronics Students' Group website is finished and can be visited at: http://usgroup.eu where you can also find out more about usgroup, as well as their projects and activities. You can also follow usgroup on Twitter and on Facebook. For further information please contact:

Daniel Oliveira (Microelectronics Students' Group)
Faculdade de Engenharia da Universidade do Porto
Rua Dr. Roberto Frias, s/n 4200-465 Porto PORTUGAL

mail: cmos@fe.up.pt, web: cmos.fe.up.pt

Jan 17, 2011

[mos-ak] 8th IWCM; Jan.25, 2011; Pacifico Yokohama, Japan

8th International Workshop on Compact Modeling
http://www.aspdac.com/aspdac2011/colocated_event/
January 25(Tue), 2011
Pacifico Yokohama room 419, Yokohama, Japan

The workshop provides an opportunity for the discussion and the
presentation of advances in modeling and simulation of integrated
circuits. Following IWCM sessions are foreseen:

Workshop Opening: M. Miura-Mattausch (chair)
Simulation Methodology (Chair: Z. Yu)
Conventional MOSFET (Chair: G. Yokomizo)
Organic Materials (Chair: W. Grabinski)
Power Device (Chair: Y. J. Park)
Closing: J. He (co-chair)

Complete IWCM program is available on-line:
http://home.hiroshima-u.ac.jp/usdl/IWCM/FILES/IWCM_Program_11_revised.pdf

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Jan 12, 2011

[mos-ak] MOS-AK/GSA San Francisco Workshop Press Release

Press release:
MOS-AK/GSA Modeling Working Group Holds Workshop in San Francisco
Experts Share Insight on Electron Device Modeling with Emphasis on
Simulation-Aware Models
can be found on the GSA site at: http://www.gsaglobal.org/news/article.asp?article=2011/0110

Jan 10, 2011

Opprtunity with MNC Product Company in Bangalore

I copy a post from LinkedIn:

Position Description
The member of technical staff (MTS) in this role will be responsible for the implementing and maintaining all device models for the company’s Analog FastSPICE (AFS) circuit simulator. The MTS will also debug various model-related circuit simulation issues such as convergence and accuracy issues, which will require working closely with circuit simulation developers and application engineers. The successful candidate will have sufficient circuit and circuit simulator background for these responsibilities.

Responsibilities

Implement and maintain all device models for the AFS circuit simulator.
Improve performance, convergence, and similar issues related to device models.
Verify device model accuracy and create testcases to validate and regression test accuracy.
Develop and maintain interfaces to implement models from Verilog-A and other simulators.
Lead AFS circuit simulator qualification for various foundry process technologies.
Work with applications and customers on select model and model interface development.
Requirements

3+ years experience in areas related to model development and circuit simulation.
Excellent knowledge of circuits containing diode, bipolar, and MOS devices.
Experience in debugging customer test cases for model and model related issues.
Good knowledge of Verilog-A and modeling in Verilog-A.
Outstanding programming skills in C/C++.
Excellent oral and written communication skills.
Ability work effectively within a worldwide development organization.
Masters or PhD degree in electrical engineering or relevant area.
Desirable

Familiarity with architecture of model implementation in true SPICE accurate simulators.
Previous experience in implementing device models in a circuit simulator.

Interested folks can contact bibin.sundaran at careernet.co.in, 9611833167

Dec 20, 2010

[mos-ak] MOS-AK/GSA San Francisco, CA Workshop on-line Publications

MOS-AK/GSA San Francisco, CA workshop on-line publications are
available, visit:
http://mos-ak.org/california/

More that 50 registered participants followed 11 technical compact
modeling talks at the MOS-AK/GSA Compact Modeling Workshop in San
Francisco, CA. I would like to thank all MOS-AK/GSA speakers for
sharing their compact modeling competence, R&D experience and
delivering valuable MOS-AK/GSA presentations. I am sure, that our
modeling event in San Francisco, CA was beneficial to all MOS-AK
Workshop attendees.

Organization of our modeling event would not be possible without our
generous sponsors: Accelicon Technologies and Cascade Microtech as
well as the IEEE EDS, technical co-sponsorship. I also would also like
to personally acknowledge local workshop organizers, in particular,
Tim K. Smith for his dedication and personal assistance to provide
smooth workshop logistics.

I hope, we would have a next chance to meet us with your academic and
industrial partners at future MOS-AK/GSA modeling events (check the
list below).

- with regards - WG (for the MOS-AK/GSA Committee)
––––––––––––––––––––––––––––––––––----------------
MOS-AK/California on-line publications <http://mos-ak.org/california/
>
MOS-AK/Seville on-line publications <http://mos-ak.org/seville>
IWCM at ASP-DAC in Yokohama Jan.2011 (with MOS-AK Support)
MOS-AK/Paris at UPMC/LIP6 <http://www.mos-ak.org/paris/>
MIXDES in Gliwice June 16-18, 2011 (with MOS-AK Session)
MOS-AK/Helsinki Sept.16, 2011 (ESSDERC time frame)
––––––––––––––––––––––––––––––––––----------------

Dec 15, 2010

Electronics industry braces for rare-earth-materials shortages

From EDN:

Electronics industry braces for rare-earth-materials shortages:

"China has started to severely restrict the exports of rare-earth materials, which often find use in “green”-technology designs, including hybrid vehicles and energy-efficient lighting, as well as in the medical, defense, and consumer markets. The country delivers nearly 100% of the world’s rare-earth materials: 17 metals that are somewhat hard to refine and that tend to occur in the same ore deposits (Table 1). The cutbacks have resulted in shock waves through the electronics industry and could force design changes in the near future.

China set out on a moderate restriction path this year and then announced in July that it would cut exports by 72% for the remainder of 2010. It plans an overall export reduction of 30% for next year.

These cutbacks have increased the price of rare-earth materials an average of 700%, prompting legislation, which is currently stalled, to restart US rare-earth-materials production. The Western Hemisphere’s one rare-earth-materials producer, Colorado-based Molycorp Minerals, issued an initial public offering of stock in July, raising $390 million to restart its California mine and ramp up processing to counter world shortages.

Part of China’s motivation for reducing rare-earth-materials exports is its desire to emphasize its industrial status. China’s leaders want to move away from raw-materials exports and evolve toward exporting more finished goods.

Production of rare-earth materials fell off worldwide beginning in the 1980s when low prices in China made production unfeasible elsewhere in the world. Tom Valiere, senior vice president and co-founder of Design Chain Associates, says this cutback is a wake-up call for US industry. “We used to lead the world in the export of rare-earth materials,” he says. “In the last 20 years, we’ve become dependent. The whole thing flew under the radar until green technology placed demand on rare-earth materials and we realized they were sole-sourced to China.”

China’s restrictions this year have been part of a multiyear plan to save most of its supply for its own industry. “Each year, China has brought down its exports by X% and never exceeded its quotas,” says Gareth Hatch, co-founder of Technology Metals Research. “The reduction the country made in July was a huge reduction over the first half of the year.”

Worldwide shortages are now occurring. “The world outside China uses a collective 50,000 tons annually,” says Jim Simms, director of public affairs at Molycorp Minerals. “[China] reduced its exporting in 2010 to about 30,000 tons. Since China supplies about 97% of rare-earth materials, the world has to depend on what China exports.”

Simms believes that the demand for the materials will just increase over the coming years. The company expects to produce 20,000 tons by the end of 2012. “My BlackBerry only has about 3/10g of rare-earth materials,” he says, but “a single wind turbine requires about one ton. A car can use about 25 kg.”

Lynas Corp, a rare-earth-materials supply company in Australia, expects to increase rare earths delivery in 2011 to 11,000 tons per year.

Rare-earth materials facts

Rare-earth materials include terbium, which finds use in flat-panel TVs and high-efficiency fluorescent lamps, and neodymium, key to the permanent magnets in high-efficiency electric motors. Rare-earth materials are not indeed rare. The series of nonferrous metals is common in the environment. According to Design Chain Associates, most rare-earth materials are as common as copper, and even the rarest is more common than gold.

Part of the market pressure on rare-earth materials comes from new demand that green technologies has prompted. The market, including electric- and hybrid-vehicle motors and wind turbines, requires magnets.
,..."