Daolin Cai, Zhitang Song, Houpeng Chen, Xiaogang Chen
Research highlights► Temperature model is constituted by an active region and a dispersed-heat region. ► Calculated and simulated the radius and crystalline fraction. ► Crystalline fraction and temperature increase with the reset voltage increasing.
Microwave noise modeling of FinFETs Original Research Article
Giovanni Crupi, Alina Caddemi, Dominique M.M.-P. Schreurs, Wojciech Wiatr, Abdelkarim Mercha
Comprehensive numerical simulation of threshold-voltage transients in nitride memories Original Research Article
Aurelio Mauri, Salvatore M. Amoroso, Christian Monzio Compagnoni, Alessandro Maconi, Alessandro S. Spinelli
Research highlights► We present a complete model to describe charge trap devices behavior. ► In this study any mathematical aspect regarding holes and electrons is detailed modeled. ► Experimental data coming from different TANOS and SONOS devices are correctly reproduced.
A unified short-channel compact model for cylindrical surrounding-gate MOSFET Original Research Article
Bastien Cousin, Marina Reyboz, Olivier Rozeau, Marie-Anne Jaud, Thomas Ernst, Jalal Jomaah
Research highlights► A compact model of short-channel effects for GAA MOSFET has been developed. ► The model uses a well-known extraction method making the model simple and accurate. ► Each term is used in a model core in order to provide a short-channel correction. ► The compact model is well described and is suitable with circuit design tools. ► The model is validated using TCAD simulations for all gate lengths down to 10nm.
Physical limitations of the diffusive approximation in semiconductor device modeling Original Research Article
Tigran T. Mnatsakanov, Alexey G. Tandoev, Michael E. Levinshtein, Sergey N. Yurkov
Research highlights► New criteria for occurrence of the diffusion mode were formulated. ► The applicability limits of the diffusion approximation in simulation were found. ► The analytical results are confirmed by a numerical experiment.
Direct determination of threshold condition in DG-MOSFETs from the gm/ID curve Original Research Article
Ana Isabela Araújo Cunha, Marcelo Antonio Pavanello, Renan Doria Trevisoli, Carlos Galup-Montoro, Marcio Cherem Schneider
Dynamic model of AlGaN/GaN HFET for high voltage switching Original Research Article
A surface potential based drain current model for asymmetric double gate MOSFETs Original Research Article
Pradipta Dutta, Binit Syamal, N. Mohankumar, C.K. Sarkar
Research highlights► We model a surface potential based drain current for asymmetric DG MOSFETs. ► The model is applicable for both heavily and lightly doped Silicon channel. ► The surface potential at both the gates are solved using proper Iterative techniques. ► The effect of volume inversion is shown in case of lightly doped channel.
AlGaN/GaN hybrid MOS-HEMT analytical mobility model Original Research Article
A. Pérez-Tomás, A. Fontserè
Research highlights► The hybrid normally-off switch AlGaN/GaN MOS-HEMT combines two main advantages: ► The MOS gate control and the high 2DEG mobility in AlGaN/GaN drift region. ► Here, we present simple analytical modeling of the on-resistance of a hybrid MOS-HEMT. ► We investigate the layout, the MOS channel mobility, the effect of a high-k and the temperature. ► The model can aid to understand the device physics and is compatible with TCAD simulation packages.
Mobility degradation and transistor asymmetry impact on field effect transistor access resistances extraction
J.C. Tinoco, A.G. Martinez-Lopez, J.-P. Raskin