Pages 13-17
Daolin Cai, Zhitang Song, Houpeng Chen, Xiaogang Chen
Research highlights
► Temperature model is constituted by an active region and a dispersed-heat region. ► Calculated and simulated the radius and crystalline fraction. ► Crystalline fraction and temperature increase with the reset voltage increasing.Microwave noise modeling of FinFETs Original Research Article
Pages 18-22
Giovanni Crupi, Alina Caddemi, Dominique M.M.-P. Schreurs, Wojciech Wiatr, Abdelkarim Mercha
Comprehensive numerical simulation of threshold-voltage transients in nitride memories Original Research Article
Pages 23-30
Aurelio Mauri, Salvatore M. Amoroso, Christian Monzio Compagnoni, Alessandro Maconi, Alessandro S. Spinelli
Research highlights
► We present a complete model to describe charge trap devices behavior. ► In this study any mathematical aspect regarding holes and electrons is detailed modeled. ► Experimental data coming from different TANOS and SONOS devices are correctly reproduced.A unified short-channel compact model for cylindrical surrounding-gate MOSFET Original Research Article
Pages 40-46
Bastien Cousin, Marina Reyboz, Olivier Rozeau, Marie-Anne Jaud, Thomas Ernst, Jalal Jomaah
Research highlights
► A compact model of short-channel effects for GAA MOSFET has been developed. ► The model uses a well-known extraction method making the model simple and accurate. ► Each term is used in a model core in order to provide a short-channel correction. ► The compact model is well described and is suitable with circuit design tools. ► The model is validated using TCAD simulations for all gate lengths down to 10nm.Physical limitations of the diffusive approximation in semiconductor device modeling Original Research Article
Pages 60-67
Tigran T. Mnatsakanov, Alexey G. Tandoev, Michael E. Levinshtein, Sergey N. Yurkov
Research highlights
► New criteria for occurrence of the diffusion mode were formulated. ► The applicability limits of the diffusion approximation in simulation were found. ► The analytical results are confirmed by a numerical experiment.Direct determination of threshold condition in DG-MOSFETs from the gm/ID curve Original Research Article
Pages 89-94
Ana Isabela Araújo Cunha, Marcelo Antonio Pavanello, Renan Doria Trevisoli, Carlos Galup-Montoro, Marcio Cherem Schneider
Dynamic model of AlGaN/GaN HFET for high voltage switching Original Research Article
Pages 135-140
Alexei Koudymov
A surface potential based drain current model for asymmetric double gate MOSFETs Original Research Article
Pages 148-154
Pradipta Dutta, Binit Syamal, N. Mohankumar, C.K. Sarkar
Research highlights
► We model a surface potential based drain current for asymmetric DG MOSFETs. ► The model is applicable for both heavily and lightly doped Silicon channel. ► The surface potential at both the gates are solved using proper Iterative techniques. ► The effect of volume inversion is shown in case of lightly doped channel.AlGaN/GaN hybrid MOS-HEMT analytical mobility model Original Research Article
Pages 201-206
A. Pérez-Tomás, A. Fontserè
Research highlights
► The hybrid normally-off switch AlGaN/GaN MOS-HEMT combines two main advantages: ► The MOS gate control and the high 2DEG mobility in AlGaN/GaN drift region. ► Here, we present simple analytical modeling of the on-resistance of a hybrid MOS-HEMT. ► We investigate the layout, the MOS channel mobility, the effect of a high-k and the temperature. ► The model can aid to understand the device physics and is compatible with TCAD simulation packages.Mobility degradation and transistor asymmetry impact on field effect transistor access resistances extraction
Pages 214-218
J.C. Tinoco, A.G. Martinez-Lopez, J.-P. Raskin
No comments:
Post a Comment