Nov 30, 2009
Circuit Simulation with SPICE OPUS, Theory and Practice
The Complete Book on Contemporary Circuit Design
Series: Modeling and Simulation in Science, Engineering and Technology
ISBN: 978-0-8176-4866-4, 2009, Hardcover; A Birkhäuser book
Download simulation examples from chapter 7 (examples07.zip 23KB)
More about the book ...
Visit also OPUS Spice web site.
Nov 18, 2009
[mos-ak] [Dec.9, 2009] MOS-AK Meeting at Baltimore // 2nd announcement
http://www.mos-ak.org/baltimore/
with updated:
* Speakers list:
http://www.mos-ak.org/baltimore/index.php#Speakers
* Extended Panel Session:
http://www.mos-ak.org/baltimore/index.php#Panel_Discussion
* To register, use available Free On-line Registration form:
http://www.mos-ak.org/baltimore/register.php
* Important dates:
# Nov.30 Final program
# Dec.9, 2009 MOS-AK/GSA Workshop
# collocated with:
* IEDM Conference (Dec.6-9 <http://www.his.com/~iedm/>)
* CMC Meeting (Dec.10-11 <http://www.geia.org/index.asp?bid=597>)
* ISDRS Symposium (Dec. 9-11 <http://www.ece.umd.edu/isdrs2009/>
* MOS-AK/Baltimore Committee:
* Andreas G. Andreou, JHU; Technical Program Chair
* Pekka Ojala, Exar; MOS-AK/GSA WG North America Chair
* Gilson I Wirth; UFRGS; MOS-AK/GSA WG South America Chair
* Ehrenfried Seebacher, austriamicrosystems AG; MOS-AK/GSA WG
Europe Chair
* Chelsea Boone GSA; Senior Research Analyst
* Darryl Leavitt, GSA; Director of Events
* Wladek Grabinski, GMC Suisse; MOS-AK/GSA Workshop Manager
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Touchstones of a Quality Compact Model
- incorporate new physics that improves the accuracy or predictive ability of existing models in a meaningful way, and/or
- it should demonstrate a novel method or approach that improves the efficiency of the simulations without loss of accuracy, and/or
- it should take an existing phenomenological or semi-empirical model and establish the physical foundations of the model and/or
- it should provide new insight into the functioning, performance characteristics, reliability, or limits of conventional devices and ideally should even suggest a means of improvement, and/or
- it should provide new insights into how existing models are related, and/or
- it should be predictive of new behaviors which can be subsequently observed and/or,
- it should clarify the domain of validity of existing models.
- a) When presenting results that are compared with simulation results, authors should state which models were turned on in the simulations.
- b) When presenting results that are compared with simulation results, authors should include a table that identifies the simulation parameters and the analytical model parameters (physical as well as fitting) used to generate the model traces. If the simulation parameters differ from the corresponding analytical physical parameters, authors should explain why.
- c) When presenting results that are compared with simulation results, authors should only show relevant comparison plots with correct models turned on. For example if the compact model considers field-dependent mobility when reporting transport properties, then the corresponding TCAD plots should not be reported using constant mobility.
- d) When reporting subthreshold voltages extracted from simulations, authors should state the method of extraction and if by constant current method they should state the current cut-off value used.
- e) Authors should actually read and understand the references they cite. Specifically, cited references should actually substantiate the claims made by the author.
Doug Verret
Editor-in-Chief
Electron Devices, IEEE Transactions on
Houston, TX
REFERENCE:
[1] D. Verret; "Touchstones of a Quality Compact Model" Electron Devices, IEEE Transactions on; Nov. 2009; Vo. 56, No. 11; pp: 2374-2375
Some humor
I wonder what are the figures for "Compact Model", "Physical Model", "Analytical model", etc...
Nov 17, 2009
EUROSOI 2010
Grenoble, France, 25-27 January, 2010
- Keynote Talks
- SOI- the next five years: The critical role that SOI will play in the semiconductor ecosystem and how it will happen – H. Mendez (SOI Consortium)
- Germanium Integration on Silicon for High Performance FETs and Optical Interconnects – K. Saraswat (Stanford University)
- Training Course
- 3D integration – N. Sillon (CEA-LETI)
- Electrical characterisation of SOI nanodevices – G. Ghibaudo (IMEP)
- Piezoelectrical technology on SOI (RF Filter) – S. Ballandras (CNRS)
- III-V nanoelectronic on insulator – S. Bollaert (CNRS)
- SOI technologies and circuits – J. Hoentschel (Global Foundries)
Nov 15, 2009
Call for Papers: ICGCS 2010
- Green Transistors and Devices
- Low Power Low Voltage Techniques for Analog, Mixed-Signal, Digital Circuits
- Sub-threshold Circuit Design
- Energy Efficient Analog Signal Processing Techniques
- Computationally Efficient Digital Signal Processing Techniques
- Signal Processing for Communications
- Visual Signal Processing Techniques and Multimedia Systems
- Optimization Techniques
- Self-Powered Circuits and Systems
- Adaptive and Reconfigurable Circuits and Systems
- Scalable and Power Aware Systems
- Energy Harvesting
- Energy and Power Management
- Green Power Electronic Circuits and Systems
- Renewable Energy
- MEMS and Sensors for Energy Management
- Environmental Sensing, Control and Protection
- Circuits and Systems Technologies for Recycling and Pollution Control
- Emerging Technologies for Green Circuits and Systems
The deadline for submission of Papers is on February 22, 2010. For more details, please visit: http://www.icgcs.org. We welcome you to contribute your work(s) to ICGCS2010 and hope to see you in Shanghai.
Contact: Yong Lian and Tor S. Lande; ICGCS 2010 Technical Program Chairs
Nov 13, 2009
Open, One year post doc position for development of HV transistor SPICE models
- PhD or Master/Dipl. Ing. in Physics or Electronic Engineering
- Experience in SPICE modeling (e.g. BSIM, EKV, PSP, HiSIM)
- Unterpremstaetten/Graz , Austria
- Development of HV transistor SPICE models
- Parameter extraction and measurements for SPICE models
- Project management within the COMON project
- Writing documents and deliverables
Senior Manager Process and Device Characterization - Modeling
austriamicrosystems AG
Operations - Process Developments
Schloss Premstaetten
8141, Unterpremstaetten, Austria
Tel: +43 3136 500 5487
Fax: +43 3136 500 5755