[mos-ak] [2nd Announcement and C4P] 13th Virtual MOS-AK Workshop, Silicon Valley, Dec. 10-11 2020

Together with  local organization team, International MOS-AK Board of R&D Advisers as well as all the Extended MOS-AK TPC Committee, we have the pleasure to invite to consecutive, 13th International MOS-AK Workshop which will be organized as the virtual/online event on Dec. 10-11, 2020 (preceding the IEDM and Q4 CMC Meetings)

Planned virtual 13th International MOS-AK Workshop aims to strengthen a network and discussion forum among experts in the field, enhance open platform for information exchange related to compact/SPICE modeling and Verilog-A standardization, bring academic and industrial experts in the compact modeling field together, as well as obtain feedback from technology developers, circuit designers, and CAD/EDA tool developers and vendors. 

Venue: Virtual/Online

Online Workshop Registration to be open 

(any related enquiries can be sent to registration@mos-ak.org)

Topics to be covered include the following among other related to the compact/SPICE modeling and its Verilog-A standardization:

• Compact Modeling (CM) of the electron devices
• Advances in semiconductor technologies and processing
• Verilog-A language for CM standardization
• New CM techniques and extraction software
• Open Source (FOSS) TCAD/EDA modeling and simulation
• CM of passive, active, sensors and actuators
• Emerging Devices, TFT, CMOS and SOI-based memory cells
• Microwave, RF device modeling, high voltage device modeling
• Nanoscale CMOS, BiCMOS, SiGe, GaN, InP devices and circuits
• Technology R&D, DFY, DFT and reliability/ageing IC designs
• Foundry/Fabless Interface Strategies

Important Dates: 

• 2nd Announcement: Nov. 2020
  
• Final Workshop Program: Dec. 2020
  
• Virtual MOS-AK Workshop: Dec. 10-11, 2020
  

Online Abstract Submission to be open 

(any related enquiries can be sent to abstbstracts@mos-ak.org)

Extended MOS-AK Committee

WG10112020

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[mos-ak] [online publications] Virtual MOS-AK Workshops (Sept. 2020)

Arbeitskreis Modellierung von Systemen und Parameterextraktion 

Modeling of Systems and Parameter Extraction Working Group

Virtual MOS-AK Workshops (Sept. 2020)

Local organization teams together with the International MOS-AK Board of R&D Advisers as well as all the Extended MOS-AK TPC Committee have organized two subsequent virtual/online workshops

• MOS-AK Workshop as ESSDERC/ESSCIRC Virtual Educational Event
  • http://www.mos-ak.org/grenoble_2020/
  • Sept.15, 2020 (16:00 - 17:00 CET with livestreaming) 
• MOS-AK Workshop at THM Giessen (D),
  • http://www.mos-ak.org/giessen_2020/
  • Tue 29.09.2020 - MOS-AK
  • Wed 30.09.2020 - MOS-AK & IEEE EDS MQ
  • Thu 01.10.2020 - IEEE EDS MQ & SB MOS Symposium

Online Publications:

There are MOS-AK technical presentations covering selected aspects of the compact/SPICE modeling and its Verilog-A standardization (see  the slide presentations online at respective corresponding links).

Postworkshop Publications:

Selected best MOS-AK technical presentation will be recommended for further publication in a special Solid State Electronics issue on compact modeling planned for 2021

The MOS-AK Association plans to continue its standardization efforts by organizing future compact modeling meetings, workshops and courses around the globe thru 2020 and next 2021 year, including:

• Virtual MOS-AK Silicon Valley (US), Dec. 10-11 2020 
• FOSDEM CAD/EDA DevRoom, ULB, (B) Feb. 2021
• MOS-AK at LAEDC (MX),  April 18-20 2021
• FOSS TCAD/EDA at 5NANO2021, Kottayam (IN) April 2021
• MIXDES CM Session, Wroclaw (PL), June 2021
  with IEEE EDS MQ
• 5th Sino MOS-AK Xi'an (CN), July  2021
• 19th MOS-AK at ESSDERC/ESSCIRC, Grenoble (F) Sept. 2021
• 14th US MOS-AK Workshop, Silicon Valley (US) Dec. 2021
  in timeframe of IEDM and Q4 CMC Meetings

W.Grabinski on the behalf of International MOS-AK Committee  

WG10112020

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[paper] TFT for Mixed Signal and Analog Computation

Eva Bestelink, Olivier de Sagazan, Lea Motte, Max Bateson, Benedikt Schultes, S. Ravi P. Silva,

and Radu A. Sporea

Versatile Thin‐Film Transistor with Independent Control of Charge Injection and Transport

for Mixed Signal and Analog Computation

Adv. Intell. Syst.. (2020) pp.1-9, DOI:10.1002/aisy.202000199 

Abstract: New materials and optimized fabrication techniques have led to steady evolution in large area electronics, yet significant advances come only with new approaches to fundamental device design. The multimodal thin-film transistor introduced here offers broad functionality resulting from separate control of charge injection and transport, essentially using distinct regions of the active material layer for two complementary device functions, and is material agnostic. The initial implementation uses mature processes to focus on the device’s fundamental benefits. A tenfold increase in switching speed, linear input–output dependence, and tolerance to process variations enable low-distortion amplifiers and signal converters with reduced complexity. Floating gate designs eliminate deleterious drain voltage coupling for superior analog memory or computing. This versatile device introduces major new opportunities for thin-film technologies, including compact circuits for integrated processing at the edge and energy-efficient analog computation.

Figure: Outcomes of separating control for injection and conduction shown via TCAD simulation. a) MMT transient response is much faster than conventional contact-controlled TFTs

b) A MMT with multiple, appropriately sized CG1 gates can function as a digital-to-analog converter (DAC) with CG2 providing an enabling, sampleand-hold (S/H) function. 

Acknowledgements: E.B. and R.A.S. contributed equally to this work. This work was partly supported through EPSRC grants EP/R511791/1 and EP/R028559/1 and Research Fellowship 10216/110 from the Royal Academy of Engineering of Great Britain. Device fabrication had been performed on the NanoRennes platform. The authors thank Dr. Brice Le Borgne for initial liaison and process discussions, Prof. John M. Shannon for on-going advisory meetings, Prof. Craig Underwood for reviewing the manuscript, Dr. David Cox and Mr. Mateus Gallucci Masteghin for assistance with the SEM images.