#Kioxia has a paper on #ferroelectric #RAM. The symposia have gone virtual in 2020 and take place June 15 to 19 https://t.co/k0wo1wGRzk #paper https://t.co/9cSMZCh3cv

#Kioxia has a paper on #ferroelectric #RAM. The symposia have gone virtual in 2020 and take place June 15 to 19https://t.co/k0wo1wGRzk#paper pic.twitter.com/9cSMZCh3cv

— Wladek Grabinski (@wladek60) May 27, 2020

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May 27, 2020 at 06:04PM
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#Korean researchers 3D print highly-sensitive, #wearable #biosensors https://t.co/ZnXxlGvSfS #paper https://t.co/7t2rVVC07n

#Korean researchers 3D print highly-sensitive, #wearable #biosensors https://t.co/ZnXxlGvSfS#paper pic.twitter.com/7t2rVVC07n

— Wladek Grabinski (@wladek60) May 27, 2020

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May 27, 2020 at 01:44PM
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#EU and #Japan step up cooperation in #science, #technology and innovation https://t.co/710WckAuB6 #Paper https://t.co/XdoU4mjQ3D

#EU and #Japan step up cooperation in #science, #technology and innovation https://t.co/710WckAuB6#Paper pic.twitter.com/XdoU4mjQ3D

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[paper] InAs-OI-Si MOSFET Compact Model

S. K. Maity, A. Haque and S. Pandit

Charge-Based Compact Drain Current Modeling of InAs-OI-Si MOSFET 

Including Subband Energies and Band Nonparabolicity

in IEEE TED, vol. 67, no. 6, pp. 2282-2289, June 2020

doi: 10.1109/TED.2020.2984578

Abstract: In this article, we report a physics-based compact model of drain current for InAs-on-insulator MOSFETs. The quantum confinement effect has been incorporated in the proposed model by solving the 1-D Schrödinger–Poisson equations without using any empirical model parameter. The model accurately captures the variation of surface potential, charge density in the inversion layer, and subband energy levels with gate bias inside the quantum well. The conduction-band nonparabolicity effect on modification in eigen energy, effective mass, and density of states is derived and incorporated into the proposed model. The velocity overshoot effect that originates from the quasi-ballistic nature of carrier transport is also considered in the model. The proposed drain current model has been implemented in Verilog-A to use in the SPICE environment. The model predicted results are in good agreement with the commercial device simulator results and experimental data. 

Fig: Energy band profile of InAs-OI-Si MOSFET in the direction perpendicular to the oxide interface at flat-band condition. E0 and E1 denote the first and the second subband energy levels, respectively, and ΔEc and Vox represent the conduction-band offset between buffer-channel and oxide-channel regions, respectively.

Acknowledgment: The author S. Pandit would like to thank the Department of Electronics and Information Technology, Government of India for utilizing the resources obtained under the SMDP-C2SD Project at the University of Calcutta.

URL: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9067014&isnumber=9098120

Open PhD Positions In The Eu-Funded Project "GREAT". Currently, there are still vacancies in Germany and France. You can find more information at: https://t.co/9I9kUDznV7 AMO GmbH | https://t.co/GS5EmAINfr #paper https://t.co/haPyrQLtG9

Open PhD Positions In The Eu-Funded Project "GREAT". Currently, there are still vacancies in Germany and France. You can find more information at: https://t.co/9I9kUDznV7
AMO GmbH | https://t.co/GS5EmAINfr#paper pic.twitter.com/haPyrQLtG9

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[paper] Organic Transistor Memory Based on Black Phosphorus Quantum Dots

P. Kumari, J. Ko, V. R. Rao, S. Mhaisalkar and W. L. Leong

Non-Volatile Organic Transistor Memory Based on Black Phosphorus Quantum Dots as Charge Trapping Layer,

in IEEE Electron Device Letters, vol. 41, no. 6, pp. 852-855, June 2020

doi: 10.1109/LED.2020.2991157

Abstract: High performance organic nano-floating gate transistor memory (NFGTM) has important prerequisites of low processing temperature, solution–processable layers and charge trapping medium with high storage capacity. We demonstrate organic NFGTM using black phosphorus quantum dots (BPQDs) as a charge trapping medium by simple spin-coating and low processing temperature ( 120 °C). The BPQDs with diameter of 12.6 ± 1.5 nm and large quantum confined bandgap of ~2.9 eV possess good charge trapping ability. The organic memory device exhibits excellent memory performance with a large memory window of 61.3 V, write-read-erase-read cycling endurance of 10 3 for more than 180 cycles and reliable retention over 10,000 sec. In addition, we successfully improved the memory retention to ON/OFF current ratio 10E4 over 10,000 sec by introducing PMMA as the tunneling layer.

 

FIG: a.) Schematic of bottom gate top contact NFGTM device; b.) Band diagram explaining memory mechanism under positive gate bias 

Acknowledgement: W.L. Leong would like to acknowledge funding support from her NTU start-up grant (M4081866), Ministry of Education (MOE) under AcRF Tier 1 grant (2016-T1-002- 097), Tier 2 grant (2018-T2-1-075), ASTAR AME IAF-ICP Grant (No.I1801E0030) and A*STAR AME Young Individual Research Grant (Project No. A1784c019).

[paper] IoT Vision empowered by EH-MEMS and RF-MEMS

Internet of things (IoT); internet of everything (IoE); tactile internet; 5G
A (not so evanescent) unifying vision empowered 
by EH-MEMS (energy harvesting MEMS) and RF-MEMS (radio frequency MEMS)

 Jacopo Iannacci
Fondazione Bruno Kessler (FBK) in Trento (IT)

Sensors and Actuators A: Physical 272 (2018): 187-198

Abstract: This work aims to build inclusive vision of the Internet of Things (IoT), Internet of Everything (IoE), Tactile Internet and 5G, leveraging on MEMS technology, with focus on Energy Harvesters (EH-MEMS) and Radio Frequency passives (RF-MEMS). The IoT is described, stressing the pervasivity of sensing/actuating functions. High-level performances 5G will have to score are reported. Unifying vision of the mentioned paradigms is then built. The IoT evolves into the IoE by overtaking the concept of thing. Further step to Tactile Internet requires significant reduction in latency, it being enabled by 5G.

The discussion then moves closer to the hardware components level. Sets of specifications driven by IoT and 5G applications are derived. Concerning the former, the attention is concentrated on typical power requirements imposed by remote wireless sensing nodes. Regarding the latter, a set of reference specifications RF passives will have to meet in order to enable 5G is developed. Once quantitative targets are set, a brief state of the art of EH-MEMS and RF-MEMS solutions is developed, targeting the IoT and 5G, respectively. In both scenarios, it will be demonstrated that MEMS are able to address the requirements previously listed, concerning EH from various sources and RF passive components.

FIG: Scheme of the pillar drivers supporting evolution of the IoT into IoE andTactile Internet.
Some relevant IoT technology enablers are indicated.

In conclusion, the frame of reference depicted in this work outlines a relevant potential borne by EH-MEMS and RF-MEMS solutions within the unified scenario of IoT, IoE, Tactile Internet and 5G, making the forecast of future relentless growth of MEMS-based devices, more plausible and likely to take place.