Apr 1, 2020

[C4P] ESSDERC TRACK3 Compact Modeling


European ESSDERC/ESSCIRC conference will be organized in Grenoble (F) on Sept.14-18, 2020 with its integral TRACK3: Compact Modeling and Process/Device Simulation which is open for submissions, now. You and all your R&D partners are welcome to submit a modeling paper. The paper submission deadline is April 17, 2020

TRACK3: Compact modeling and process/device simulation (including TCAD and advanced simulation techniques and studies)  focuses on following domains among other R&D topics:
  • Compact/SPICE modeling of electronic, optical, organic, and hybrid devices and their IC implementation and interconnection. 
  • Verilog-A models of the semiconductor devices (including Bio/Med sensors, MEMS, Microwave, RF, HV and Power, emerging technologies and novel devices)
  • Compact/SPICE parameter extraction
  • Performance evaluation and open source (FOSS) benchmarking/implementation methodologies
  • Modeling of interactions between process, device and circuit design, 
  • Foundry/Fabless interface strategies
  • Numerical TCAD, analytical, statistical modeling and simulation of electronic, optical and hybrid devices, interconnect, isolation and 2D/3D integration
  • Aspects of materials, fabrication processes and devices e.g. advanced physical phenomena (quantum mechanical and non-stationary transport phenomena, ballistic transport, ...)
  • Optical, mechanical or electro-thermal modeling and simulation
  • DfM, ageing, reliability of materials and devices
Please share our TRACK3 C4P with all your academic and industrial R&D partners active in the compact/SPICE modeling, Verilog-A standardization and TCAD/EDA simulations. Of course, your and your research team proactive contribution to our TRACK3 is more than welcome. I do hope that despite of a last minute notice, with your help, we will be able to draw even more attention to the ESSDERC/ESSCIRC Conference and, in particular, our modeling TRACK3



Mar 31, 2020

#paper: Bootsma, G.J., Nordström, H., Eriksson, M. and Jaffray, D.A., 2020. Monte Carlo kilovoltage X-ray tube simulation: A statistical analysis and compact simulation method. Physica Medica, 72, pp.80-87 https://t.co/9C1S4Y3023 https://t.co/D7RzqFb7tP


from Twitter https://twitter.com/wladek60

March 31, 2020 at 09:18PM
via IFTTT

#COVID-19 Related Research and Technologies #Free to Access in #IEEE #Xplore https://t.co/8wtkdHydcI #paper https://t.co/kKCTCwfSCt


from Twitter https://twitter.com/wladek60

March 31, 2020 at 02:50PM
via IFTTT

Professional #Ventilator Design #OpenSource Today by #Medtronic https://t.co/YkzX6fpU80 https://t.co/KA23i6RVDJ


from Twitter https://twitter.com/wladek60

March 31, 2020 at 11:01AM
via IFTTT

Mar 30, 2020

#paper: N. Zagni et al. "Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-of-the-Roadmap III–V MOSFETs," in IEEE TED, vol. 67, no. 4, pp. 1560-1566, April 2020. https://t.co/wtk1U4sFuB https://t.co/xWzZ5GnQal


from Twitter https://twitter.com/wladek60

March 30, 2020 at 05:01PM
via IFTTT

#paper: X. Li, T. Pu, L. Li and J. Ao, "Enhanced Sensitivity of GaN-Based Temperature Sensor by Using the Series Schottky Barrier Diode Structure," in IEEE EDL, vol. 41, no. 4, pp. 601-604, April 2020 https://t.co/koGfb8GeST https://t.co/LCE1l2wdly


from Twitter https://twitter.com/wladek60

March 30, 2020 at 11:14AM
via IFTTT

conference paper reached 700 reads

M. Bucher, A. Bazigos and W. Grabinski, "Determining MOSFET Parameters in Moderate Inversion," 2007 IEEE Design and Diagnostics of Electronic Circuits and Systems, Krakow, 2007, pp. 1-4.

Abstract: Deep submicron CMOS technology scaling leads to reduced strong inversion voltage range due to non-scalability of threshold voltage, while supply voltage is reduced. Moderate inversion operation therefore becomes increasingly important. In this paper, a new method of determining MOSFET parameters in moderate inversion is presented. Model parameters are determined using a constant current bias technique, where the biasing current is estimated from the transconductance-to-current ratio. This technique is largely insensitive to mobility effects and series resistance. Statistical data measured on 40 dies a 0.25 um standard CMOS technology are used for the illustration of this method.