- Electronic circuits and mixed analog-digital systems
- Energy and power electronics
- The deadline for file submission is January 15th 2010 and all application's requirements are detailed on-line
Nov 7, 2009
UCL invites applications for academic positions for the academic year 2010-2011
Nov 5, 2009
An interesting paper in the Intl. Jornal of Numercal Modelling (vol 22(6))
This is not exactly compact modelling, but it's a nice thing to see:
SPICE-aided modelling of dc characteristics of power bipolar transistors with self-heating taken into account
Janusz Zar
bski, Krzysztof Górecki
Department of Marine Electronics, Gdynia Maritime University, Morska 83, 81-225 Gdynia, Poland
Abstract
This paper deals with the problem of calculations of the dc characteristics of power bipolar transistors (BJTs) with self-heating taken into account. The electrothermal model of the considered devices dedicated for PSPICE is presented. The correctness of the model was verified experimentally in all ranges of the BJT operation. Two transistors - BD285 and 2N3055 - were arbitrarily selected for investigation. A good agreement between the measured and calculated characteristics of these transistors was observed.
You can access the online version here.
SPICE-aided modelling of dc characteristics of power bipolar transistors with self-heating taken into account
Janusz Zar
bski, Krzysztof GóreckiDepartment of Marine Electronics, Gdynia Maritime University, Morska 83, 81-225 Gdynia, Poland
Abstract
This paper deals with the problem of calculations of the dc characteristics of power bipolar transistors (BJTs) with self-heating taken into account. The electrothermal model of the considered devices dedicated for PSPICE is presented. The correctness of the model was verified experimentally in all ranges of the BJT operation. Two transistors - BD285 and 2N3055 - were arbitrarily selected for investigation. A good agreement between the measured and calculated characteristics of these transistors was observed.
You can access the online version here.
55th IEEE IEDM conference
The 55th annual IEEE IEDM conference will be held at the Hilton Baltimore on December 7-9, 2009 preceded by a day of Short Courses on Sunday, Dec. 6. The world¹s best scientists and engineers in the field of electronics will showcase their work in a program of papers, panels, special sessions, Short Courses and other events that will spotlight more leading work in more areas of the field than any other conference.
The advance registration deadline is November 16 and the deadline for hotel reservations is November 6. For registration and other information, visit the IEDM 2009 home page at http://www.ieee-iedm.org
As a novelty, IEDM can be followed in twitter and facebook... which I think is a good move.
Nov 3, 2009
MEMSTECH 2010
6th International Conference
Perspective Technologies and Methods in MEMS Design
Polyana, UKRAINE, 20 - 23 April 2010
Organized by:
Topics include, but not limited to:
Perspective Technologies and Methods in MEMS Design
Polyana, UKRAINE, 20 - 23 April 2010
Organized by:
- Lviv Polytechnic National University, CAD Department, Ukraine
- Warsaw University of Technology, Institute of Telecommunication, Poland
- IEEE MTT/ED/AP/CPMT/SSC West Ukraine Chapter
Topics include, but not limited to:
- Analysis, modelling, research and design methods of microsensors and microactuators
- Software systems, models, algorithms, methods and strategies of embedded systems design
- Field issues in embedded systems modelling and design
- Issues of testing, verification, reliability and optimization in embedded systems modelling and design
- Sensors and actuators systems, nanotechnology
- Applications for electron device design
- Information Technology. Engineering Application of Informatics. Engineering Education
- February 15, 2010
- Deadline for abstract submissions (at least 400 words in plain text file, in English)
- March 15, 2010
- Notification of abstract acceptance
- April 02, 2010
- Deadline for final Camera-Ready Papers submissions (in English)
A paper in Thin Solid Films
I've found a paper that may interest you:
The quantum size effects on the surface potential of nano-crystalline silicon thin film transistors
Ling-Feng Mao
(Available online 29 October 2009)
Abstract
The impact of the grain size of nc-Si (nano-crystalline silicon) on the surface potential of doped nc-Si TFTs (thin film transistors) is discussed. Quantum size effects cause the change in both band-gap and dielectric constant of nc-Si. Numerical calculation of the surface potential in nc-Si TFTs shows that the diameter of nc-Si has a larger effect on the surface potential of nc-Si TFTs. The results demonstrate that, for medium size (7 ~ 50 nm), the change in the band-gap of nc-Si should be considered, whereas, for small size (< 7 nm), the change in the dielectric constant of nc-Si should be considered. A simplified surface potential equation for nc-Si TFTs under strong inversion condition is proposed, and shows good agreement with the original equation via numerical calculation.
Have fun!
The quantum size effects on the surface potential of nano-crystalline silicon thin film transistors
Ling-Feng Mao
(Available online 29 October 2009)
Abstract
The impact of the grain size of nc-Si (nano-crystalline silicon) on the surface potential of doped nc-Si TFTs (thin film transistors) is discussed. Quantum size effects cause the change in both band-gap and dielectric constant of nc-Si. Numerical calculation of the surface potential in nc-Si TFTs shows that the diameter of nc-Si has a larger effect on the surface potential of nc-Si TFTs. The results demonstrate that, for medium size (7 ~ 50 nm), the change in the band-gap of nc-Si should be considered, whereas, for small size (< 7 nm), the change in the dielectric constant of nc-Si should be considered. A simplified surface potential equation for nc-Si TFTs under strong inversion condition is proposed, and shows good agreement with the original equation via numerical calculation.
Have fun!
Nov 2, 2009
Oct 22, 2009
From EDN: sales are up!
SEMI: Bookings rise y/y for first time since May 2007, industry continues to improve
North America-based manufacturers of semiconductor equipment posted $732.8 million in orders last month and an improved book-to-bill ratio of 1.17, according to SEMI's September book-to-bill report.
By Suzanne Deffree, Managing Editor, News -- Electronic News, 10/21/2009
The semiconductor industry's overall situation continued to improve in September, according to the latest data from SEMI.
North America-based manufacturers of semiconductor equipment posted $732.8 million in orders in September and a book-to-bill ratio of 1.17, according to SEMI's September book-to-bill report.
A book-to-bill of 1.17 means that $117 worth of orders were received for every $100 of product billed for the month. The August book-to-bill ratio was 1.06.
The September bookings figure is 19.3% greater than the final August level of $614.5 million and 12.8% greater than the $649.9 million in orders posted in September 2008.
Meanwhile, billings in September were $624.6 million, a 7.7% improvement on the August level of $580 million but nearly 33% less than the August 2008 billings level of $927.3 million.
And you can access the full article at the original website.
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