[C4P] Micro-Nano 2025

International Conference on Micro- and Nanoelectronics, Nanotechnology and MEMS (MicroNano 2025)

https://2025.micro-nano.gr/

This annual Micro-Nano 2025 conference is organized by the Micro&Nano Scientific Society of Greece and aims to connect people from academia, research and industry, so as to stimulate discussions on the latest scientific achievements and to further promote micro- and nanotechnologies. The conference is held every time in a different city all around Greece, with the most recent one realized in Lemnos (2024). This year's Conference will be held on the island of Crete and is co-organized with the Technical University of Crete.

ABSTRACT SUBMISSION

• Conference Dates: November 6-9, 2025
• Submission Opens: will be announced
• Abstract Submission Final Deadline: will be announced
• Peer reviewing will follow immediately after submission.

[paper] Compact OTM-RRAM Characterization Platform

Max Uhlmann, Milosz Krysik, Jianan Wen, Max Frohberg, Andrea Baroni, Keerthi Dorai Swamy Reddy, 

Eduardo Pérez, Philip Ostrovskyy, Krzysztof Piotrowski, Corrado Carta, Christian Wenger, 

and Gerhard Kahmen

A Compact One-Transistor-Multiple-RRAM Characterization Platform

IEEE Transactions on Circuits and Systems I: Regular Papers (2025)

DOI: 10.1109/TCSI.2025.3555234

1. IHP GmbH Frankfurt (Oder) (D)

2. Faculty of Mathematics, Computer Science, Physics, Electrical Engineering and Information Technology, TU Brandenburg (D)

3. Institute of High-Frequency and Semiconductor System Technologies, TU Berlin (D)

Abstract: Emerging non-volatile memories (eNVMs) such as resistive random-access memory (RRAM) offer an alternative solution compared to standard CMOS technologies for implementation of in-memory computing (IMC) units used in artificial neural network (ANN) applications. Existing measurement equipment for device characterisation and programming of such eNVMs are usually bulky and expensive. In this work, we present a compact size characterization platform for RRAM devices, including a custom programming unit IC that occupies less than 1 mm2 of silicon area. Our platform is capable of testing one-transistor-one-RRAM (1T1R) as well as one-transistor-multiple-RRAM (1TNR) cells. Thus, to the best knowledge of the authors, this is the first demonstration of an integrated programming interface for 1TNR cells. The 1T2R IMC cells were fabricated in the IHP's 130 nm BiCMOS technology and, in combination with other parts of the platform, are able to provide more synaptic weight resolution for ANN model applications while simultaneously decreasing the energy consumption by 50%. The platform can generate programming voltage pulses with a 3.3 mV accuracy. Using the incremental step pulse with verify algorithm (ISPVA) we achieve 5 non-overlapping resistive states per 1T1R device. Based on those 1T1R base states we measure 15 resulting state combinations in the 1T2R cells.

FIG. The GDSII layout, schematic (a) and transmission electron microscopic (TEM) cross section image (b) of a 1T1R structure in IHP's 130 nm BiCMOS technology, with its material stack (c) and resitive switching mechanism principle (d).

Acknowledgement: This work was supported by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Project 434434223–SFB 1461

[mos-ak] [Announcement] MOS-AK INAOE Workshop, Puebla (MX), May 14-16, 2025

Arbeitskreis Modellierung von Systemen und Parameterextraktion 

Modeling of Systems and Parameter Extraction Working Group

MOS-AK INAOE Workshop

Puebla (MX), May 14-16, 2025

The semiconductor industry is crucial for Mexico's development, and it is the key for the future growth of the country economics. Producing advanced integrated circuits involves many steps, beginning with the idea for the circuits, technology, IC design and its simulation, layout generation, manufacturing and functional tests, among them. All of these stages require dedicated, specialized software programs, generally very expensive, which makes them onerous for the majority of academic institutions in the country. Recently, however, there has been an important effort in developing free open source tools for this purpose, and thus accessible to any educational institutions. These include open source tools spanning from the design to the fabrication of the circuits.  In these initial stages, having these tools available aims at fostering research and education in the field of prototyping IC design, without considering manufacturing in large quantities.

The mail goal of MOS-AK INAOE workshop is to expound on the available free open source tools for each IC development step in the design, simulation and manufacturing of integrated circuits, as well as presenting the options for the fabrication of ICs.

It is very important to train people, build the semi workforce with the basic knowledge needed to grow the semiconductor industry in Mexico. Professionals, including international researchers and experts from INAOE and other institutions, will give talks and courses to explain the tools, their potential uses, showing the engineering requirements and IC design applications.

 

The MOS-AK workshop program will be published online:

<https://mos-ak.org/puebla_2025/>

Space is limited, so we invite you to register at the following link:

<https://www-elec.inaoep.mx/~taller_semiconductores/registro.php>

-- R.Murphy and W.Grabinski 

-- on the behalf of the MOS-AK INAOE Organizing Committee

---

Enabling Compact Modeling R&D Exchange

www.mos-ak.org

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WG230425

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[C4P] ICEE 2025

7th International Conference on Emerging Electronics (ICEE 2025)

Hilton Embassy Manyata Business Park, Bengaluru (IN)

December 13-16, 2025

Upcoming ICEE 2025 is a flagship IEEE EDS four-day conference, organized to foster cutting-edge discussions and collaborations in semiconductor technologies. ICEE 2025 will feature a diverse range of sessions, including, Technical and rump sessions, Industry-academia discussions, Plenary talks by distinguished experts, Policy sessions on the future of semiconductor technologies.

ICEE 2025 invites papers (4 page Abstract submission deadline: August 1st 2025) on a diverse and comprehensive range of topics that span materials, processes, devices, circuits, systems, modeling, and reliability. This program is curated by an international team of academic and industry leaders. This edition of ICEE is especially important, given the ambitions of major global economies (such as USA, EU, Japan, India, etc.) in semiconductor manufacturing. This focus is reflected in the composition of ICEE's technical program and organizing committee, with top industry leaders on board. ICEE'25 edition plans to offer 3 Plenary Talks, 5 Keynote Talks, 150+ Invited and Platform/Oral Talks, 100+ Posters, Tutorial Sessions, Evening Industry Sessions, and Industry Exhibits with 800+ International Audiences and Industry Participation. The conference will offer opportunities to contribute, network, learn, collaborate and grow in the areas listed below. For the contributed papers, please find below the call for paper, ICEE themes/tracks, submission guidelines and 4-page abstract templates. In case of questions, please feel free to write to us at secretary@ieee-icee.org. Please keep checking the website and our social media handles for new updates [read more]

[paper] Ferroelectric MOSFET

Jean-Michel Sallese and Vincent Meyer

The Ferroelectric MOSFET: A Self-Consistent Quasi-Static Model and its Implications

IEEE transactions on electron devices 51, no. 12 (2004): 2145-2153

DOI: 10.1109/TED.2004.839113

Abstract: We report a new approach to modeling the metal-ferroelectric-insulator field-effect transistor (MFIS-FET) that leads to a physical understanding of the device in quasi-static operation. Compared to previous works, the local state of the ferroelectric layer is calculated self-consistently along the channel, without assuming any predefined hysteresis path. Further, this approach gives a consistent description of the MFIS-FET in all regions of operation, and predicts the unexpected situation where both inversion and accumulation coexist in the channel. When external voltages are varied simultaneously, we show that both current and polarizations are sensitive to the correlation between the gate, source, and drain potentials. Finally, basic derivation of analytical relations for overall MFIS-FET optimization is discussed.

Fig: Schematic description of the ferroelectric MOSFET and evolution of the ferroelectric polarization along the channel as function of the gate voltage when the device operates at low VDS (in linear mode). The progression of the gate potential is indicated by the arrows. The ferroelectric saturated loop is also plotted for clarity (dash-dotted).

Acknowledgment: The authors would like to thank C. McAndrew for his constructive comments on the manuscript.