Aug 20, 2025

IEEE SSCS DL at NXP Semiconductors, Munich

at NXP Semiconductors, Munich
Alvin Loke 
"The Road to Gate-All-Around and Its Impact on Analog Design"

Date/Time: 
11 Sep 2025 04:00 PM CEST to 06:30 PM CEST
Location: 
Schatzbogen 7; Munich, Bayern, Germany 81829
Building: NXP Semiconductors Germany GmbH
Host:
Germany Section Chapter, SSC37
Co-sponsored by NXP Semiconductors
Contact:


Abstract: Despite the much debated end of Moore's Law, CMOS scaling still maintains economic relevance with 3nm finFET SoCs already in the marketplace for over a year and 2nm gate-all-around SoCs anticipated this year. Modest feature size reduction and design/technology innovations co-optimized for primarily logic scaling continue to offer compelling node-to-node power, performance, area, and cost benefits. In this tutorial, we will start with a walk through memory lane, recounting a brief history of transistor evolution to motivate the migration from the planar MOSFET to the fully depleted FinFET. We will summarize the key process technology elements that have enabled the finFET CMOS nodes, highlighting the resulting device technology characteristics and challenges. This will set the context for motivating the introduction of the gate-all-around transistor architecture, namely nanoribbons or nanosheets, and unveiling the magic of how these devices are fabricated. We will then shift to summarize the challenges that CMOS technology scaling has imposed on analog design. To address the growing effort required for analog/mixed-signal design closure, we will cover design strategies on how analog design has adapted and thrived throughout decades of increasingly unfriendly CMOS scaling, including the migration to heterogeneous integration as prophesied by Gordon Moore's seminal 1965 paper.

BiographyAlvin Loke is a Senior Principal Engineer at Intel, San Diego, working on analog design/technology co-optimization for Intel's Angstrom-era CMOS. He has previously worked on CMOS nodes spanning 250nm to 2nm at Agilent, AMD, Qualcomm, TSMC, and NXP. He received a B.A.Sc. in engineering physics from the University of British Columbia, and M.S. and Ph.D. in electrical engineering from Stanford. After several years in CMOS process integration, Alvin has since worked on analog/mixed-signal design focusing on a variety of wireline links, design/model/technology interface, and analog design methodologies. Alvin has been an active IEEE Solid-State Circuits Society (SSCS) volunteer since 2003, having served as Distinguished Lecturer, AdCom Member, CICC Committee Member, Webinar Chair, Denver and San Diego Chapter Chair, as well as JSSC, SSCL, and Solid-State Circuits Magazine Guest Editor. He currently serves as the VLSI Symposium Secretary, SSCS Global Chapters Chair, and again as Distinguished Lecturer. Alvin has authored over 70 publications including the CICC 2018 Best Paper and invited short courses at ISSCC, VLSI Symposium, CICC, and BCICTS. He holds 29 US patents and recently received the ISSCC 2024 Outstanding Forum Speaker Award.

Aug 19, 2025

[paper] An Open-Source AMS Circuit Optimization

Z. Li and A. Chan Carusone
An Open-Source AMS Circuit Optimization Framework Based on Reinforcement Learning
From Specifications to Layouts
in IEEE Access, vol. 12, pp. 150032-150045 (2024) 
DOI: 10.1109/ACCESS.2024.3478832

Abstract: This paper presents a fully open-sourced AMS integrated circuit optimization framework based on reinforcement learning (RL). Specifically, given a certain circuit topology and target specifications, this framework optimizes the circuit in both schematic and post-layout phases. We propose using the heterogeneous graph neural network as the function approximator for RL. Optimization results suggest that it can achieve higher reward values with fewer iterations than the homogeneous graph neural networks. We demonstrate the applications of transfer learning (TL) in optimizing circuits in a different technology node. Furthermore, we show that by transferring the knowledge of schematic-level optimization, the trained RL agent can optimize the post-layout performance more efficiently than optimizing post-layout performance from scratch. To showcase the workflow of our approach, we extended our prior work to optimize latched comparators in the SKY130 and GF180MCU processes. Simulation results demonstrate that our framework can satisfy various target specifications and generate LVS/DRC clean circuit layouts.


FIG: Proposed AMS IC optimizer overview. 
The picture is adapted from [Z. Li and A. C. Carusone; 2023]

Acknowledgment: The authors would like to thank Dr. Hossein Shakiba from Huawei Technologies
for his valuable discussions throughout this project.

[REF] Z. Li and A. C. Carusone, "Design and optimization of low-dropout voltage regulator using relational graph neural network and reinforcement learning in open-source SKY130 process," in Proc. IEEE/ACM Int. Conf. Comput. Aided Design (ICCAD), Oct. 2023, pp. 1–9.


Aug 15, 2025

[mos-ak] Join the ICMC 2026 Organizing Team

International Compact Modeling Conference (ICMC) 2025 was a great success - thank you to everyone who contributed!  We're excited to announce that preparations are already underway for the next edition, taking place July 30–31, 2026 in Long Beach, California.

We are currently seeking enthusiastic volunteers to join the ICMC2026 organizing committees. If you're interested in helping shape next year's event, please complete the survey linked below:
https://survey.zohopublic.com/zs/bQfsUq

Submission deadline: August 25, 2025

📩 For questions about available roles, feel free to contact:

Shahed Reza, ICMC2026 General Chair or

Gert-Jan Smit, ICMC2026 Technical Program Chair

We look forward to your participation!

Thank you,
Leigh Anne Clevenger , Si2, on behalf of the ICMC2026 Organizing Committee

Aug 11, 2025

[mos-ak] [Final Program] 9th Sino MOS-AK Workshop Shenzhen

Arbeitskreis Modellierung von Systemen und Parameterextraktion
Modeling of Systems and Parameter Extraction Working Group
9th Sino MOS-AK Workshop Shenzhen
August 14-16, 2025

We are pleased to invite you to participate in the 9th Sino MOS-AK Workshop, a premier forum for researchers, engineers, and industry professionals engaged in the device simulations, compact modeling, Verilog-A standardization, and advanced circuit design. This year's workshop will be hosted at SUSTech in Shenzhen, offering a dynamic program that blends cutting-edge research with practical insights. 

Venue:
  • Southern University of Science and Technology (SUSTech), Shenzhen, China
  • Aug.14 Room 103
  • Aug.15 Room 103
  • Aug.15 Room 104
  • Aug.16 Room 103
  • Aug.16 Graduate Student Poster Session
We look forward to your participation in this vibrant exchange of ideas and innovations. For registration and inquiries, please contact: music@sustech.edu.cn

-- Min Zhang and W.Grabinski on the behalf of International MOS-AK TPC Committee

Enabling Compact Modeling R&D Exchange

WG11082025

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Aug 7, 2025

[book] Guide to Characteristics and Characterization of Semiconductor Surfaces





Guide to Characteristics and Characterization 
of Semiconductor Surfaces
By: Jerzy Ruzyllo (Penn State University, USA)
https://doi.org/10.1142/12792 | May 2025 | Pages: 220





This comprehensive compendium explores aspects of semiconductor surface characteristics and characterization from the perspective of applied semiconductor device research and process development, rather than an in-depth coverage of surface science related issues. It provides guidance to the features of semiconductor surfaces affecting performance of the practical semiconductor devices, as well as selection of methods used to characterize those features.

Based on the author's over thirty years of research and graduate advising in semiconductor surface processing and characterization, this unique reference text addresses the needs of graduate students, researchers and industry professionals who are familiar with semiconductor engineering and would like to learn about the practical aspects of semiconductor surface characteristics, processing techniques, and characterization methods used in device process development, process diagnostics and monitoring.
  • FRONT MATTER i–xv
  • Chapter 1: Surface as a Part of Semiconductor Device Material System 1–14
  • Chapter 2: Effect of Surface on Characteristics of Semiconductor Materials 15–36
  • Chapter 3: Interactions of Semiconductor Surfaces 37–56
  • Chapter 4: Characteristics of Semiconductor Surface Defining its Condition 57–68
  • Chapter 5: Surface Effects in Semiconductor Devices 69–79
  • Chapter 6: Surface Processing in Semiconductor Device Technology 81–117
  • Chapter 7: Semiconductor Surface Characterization Methods 119–152
  • Chapter 8: Characterization of Semiconductor Surfaces in Process Monitoring 153–176
  • BACK MATTER 177–201