Apr 7, 2022

[webinar] Power WBG Semiconductor Technology Opportunities


"Power WBG Semiconductor Technology Opportunities"
webinar hosted by 
Dr. Victor Veliadis, 
Executive Director and CTO of PowerAmerica, 
a WBG semiconductor power electronics consortium
Event by Łukasiewicz - Institute of Microelectronics and Photonics

Register now: https://lukasiewiczimif.clickmeeting.com/poweramerica/register

Silicon power devices have dominated power electronics due to their excellent starting material quality, ease of fabrication, low-cost volume production, and proven reliability. However, they’re approaching their operational limits primarily due to their relatively low bandgap and critical electric field that results in high conduction and switching losses, and poor high-temperature performance. So what can we do? Well, let’s talk about the favorable WBG material properties, their volume application opportunities, and last but not least let's highlight the respective competitive advantages of SiC and GaN.

You will additionally learn about:
  • the lateral and vertical power device configurations that will be analyzed in the context of bidirectional switching
  • specific applications and needs for bidirectional switches
  • key topologies, enabled by bidirectional switches
  • PowerAmerica’s work to accelerate WBG power electronics commercialization
About Dr. Veliadis: Dr. Victor Veliadis is Executive Director and CTO of PowerAmerica, a WBG semiconductor power electronics consortium. At PowerAmerica, he has managed a budget of $146 million that he strategically allocated to 200 industrial and University projects to accelerate WBG semiconductor clean energy manufacturing, workforce development, and job creation. His PowerAmerica educational activities have trained 410 University FTE students in applied WBG projects, and engaged 4100 attendees in tutorials, short courses, and webinars. Dr. Veliadis is an ECE Professor at NCSU and an IEEE Fellow and EDS Distinguished Lecturer. He has 27 issued U.S. patents, 6 book chapters, and over 125 peer-reviewed publications. Prior to entering academia and taking an executive position at Power America in 2016, Dr. Veliadis spent 21 years in the semiconductor industry where his work included design, fabrication, and testing of SiC devices, GaN devices for military radar amplifiers, and financial and operations management of a commercial semiconductor fab. He has a Ph.D. degree in Electrical Engineering from John Hopkins University (1995).

[Naveed Sherwani] well Sam Zeloof is now looking for a $1M donation



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April 07, 2022 at 11:28AM
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Apr 6, 2022

[paper] Compact Model of JLNGAA MOSFET in Verilog-A

Billel Smaani1,2, Shiromani Balmukund Rahi3 and Samir Labiod4
Analytical Compact Model of Nanowire Junctionless Gate-All-Around MOSFET
Implemented in Verilog-A for Circuit Simulation. 
Silicon (2022)
DOI: 10.1007/s12633-022-01847-9
   
1 Centre Universitaire Abdelhafid Boussouf, Mila, Algeria
2 Electronique Department, Constantine I University, Algeria
3 Department of Electrical Engineering, IIT Kanpur, India
4 Department of Physics, Skikda University, Algeria

Abstract: In the present research article, we have proposed an analytical compact model for Nanowire Junctionless Gate-All-Around (JLNGAA) MOSFET validated in all transistor’s operation regimes. The developed model having an analytical compact form of the current expressions, based on surface potential (ΦS), obtained from approximated solutions of Poisson’s equation. The proposed model has implemented in standard Verilog-A language using SMASH circuit simulator in order to be used in various commercial circuit simulators. The proposed model has also validated using ATLAS-TCAD simulation for various physical parameters such as the channel doping concentration (Nd) and the channel radius (R) of JLNGAA MOSFET. Finally, based on the developed Verilog-A JLNGAA MOSFET model, we have tested it in four types of low voltage circuits, CMOS inverter, CMOS NOR-Gate, an amplifier and a Colpitts oscillator.


Fig: Transient simulation of the implemented Colpitts oscillator using SMASH, where Vout is the output voltage. R = 4 nm, tox = 2 nm, L = 1 μm and Nd = 1E19/cm^3

Acknowledgments: Dr. S. B. Rahi (Indian Institute of Technology, Kanpur, India) for their useful suggestions

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April 06, 2022 at 10:52AM
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April 06, 2022 at 09:23AM
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