[paper] Single Gate Extended Source Tunnel FET

Jagritee Talukdar^a, Gopal Rawat^b, Bijit Choudhuri^a, Kunal Singh^c, Kavicharan Mummaneni^a

Device Physics Based Analytical Modeling for Electrical Characteristics of Single Gate Extended Source Tunnel FET (SG-ESTFET)

Superlattices and Microstructures (2020): 106725

DOI: 10.1016/j.spmi.2020.106725

^aDECE, NIT Silchar, Assam, India
^bDECE, NIT Hamirpur, Himachal Pradesh, India
^cDECE, NIT Jamshedpur, Jharkhand, India

Abstract: In this paper, a 2D analytical model for Single Gate Extended Source Tunnel FET has been developed which is based on the solution of Poisson’s equation simplified using parabolic approximation method. Different electrical characteristics of device physics such as surface potential, drain current, lateral, and vertical electric field of SG-ESTFET are studied incorporating various parameters like mole fraction of SiGe layer, gate dielectric constants, etc. Furthermore, in modeling and simulation, the depletion region of the drain side is included considering the effect of the fringing field. The comercial TCAD device simulator has been used to verify the accuracy and validity of the proposed analytical model for various electrical parameters such as gate to source voltage, mole fraction, and gate dielectric constants. The validity of the proposed model is confirmed by observing a decent agreement between modeling and simulation. The proposed compact model delivers quick and accurate values of various performance parameters.

Fig: 2D schematic device structure of SG-ESTFET

[paper] Parameter Extraction Technique for IGBT Compact Model

N.V. Bharadwaj¹, Dr. P. Chandrasekhar² and Dr. M. Sivakumar³

A Consecutive Parameter Extraction Technique for IGBT Compact Model

ICMM-2019; AIP Conf. Proc. 2269, 030031-1–030031-5;

DOI: 10.1063/5.0019484

¹Geethanjali College of Enegineering and Technology, Hyderabad, 501301, India 

²MGIT, Hyerabad, 500075, India 

³Gudlavalleru Engineering College, Gudlavalleru , 521356, India

Abstract: A consecutive parameter extraction technique describes the fitting target related parameters for Insulated-gate bipolar transistor (IGBT) model. The IGBT model has been represented by a couple of simplified equivalent circuits. Using simulated data for a trench-type IGBT as reference the performance of compact model IGBT is compared to an IGBT macro model. Due to physics based modeling, parameter extraction with the compact model is fast. With very less extraction effort, the compact model fits the dc current and capacitance characteristics accurately.

FIG: The IGBT cell structure with cell pitch = 4μm and trench gate depth = 3μm

#China Forecast to Represent 22% of the #Semi #Foundry Market in 2020

#China Forecast to Represent 22% of the #Semi #Foundry Market in 2020 https://t.co/srxQlcd6TQ pic.twitter.com/2Mv0Fk5Arh

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#SIA and #SRC publish $3.4bn plan for stimulating #US #semi R&D

#SIA and #SRC publish $3.4bn plan for stimulating #US #semi R&D https://t.co/Uz9fwOi962 pic.twitter.com/AyF64fHH94

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Emerging Technologies Initiative (ETI)

Emerging Technologies Initiative (ETI)

What are classified as emerging technologies?

Emerging technologies have the potential to disrupt many existing industries and significantly impact employment, security, social equity, and global relations. However, it is important to note that disruptive innovations are not just a result of new technologies.  Incremental innovations in products and processes or aggregation of clustering of technologies can also combine to result in disruptive innovation – as seen recently in the case of several FinTech and AgriTech applications. 

For the purpose of this initiative, an indicative list of technologies are given below for the reference (including but not limited to):

What are the expected outcomes of ETI?

• Develop a critical mass of individuals/groups who are interested in thinking at the intersection of ‘Science & Technology’ and ‘International Engagement’
• Identify and prioritize the technologies of relevance and importance (present as well as future)
• Map technology and innovation hubs in India to anticipate the policy implications of the latest developments in emerging technologies
• Build a comprehensive Technology Intelligence Database (TID) for identified technologies. 
• Provide evidence-informed policy choices and program roadmaps for technology indigenization (reducing tech dependency and increasing domestic tech intensity)   
• Develop and strengthen the tech-knowledge capacity of central and state ministries, departments,  industries, accelerators and startups with the help of TID.
• Operationalize the technology indigenization roadmaps with identified stakeholders onboard
• Act as a synapsis amongst different stakeholders by facilitating the exchange of knowledge, expertise, and services to develop the emerging technology ecosystem.

[read more...]

Partners:

• The Office of the Principal Scientific Adviser to the Government of India (Office of PSA)
• New Emerging & Strategic Technologies Division in the Ministry of External Affairs (NEST, MEA #NESTMEA)
• Science Policy Forum (SPF)